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IXFL132N50P3

型号：

IXFL132N50P3

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

231 K

下载PDF手册
Polar3TM HiPerFETTM  
Power MOSFET  
VDSS = 500V  
ID25 = 63A  
RDS(on) 43m  
IXFL132N50P3  
(Electrically Isolated Tab)  
trr  
250ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
ISOPLUS264  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
500  
500  
V
V
G
VDGR  
D
S
Isolated Tab  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G = Gate  
S = Source  
D
= Drain  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
63  
A
A
330  
IA  
EAS  
TC = 25C  
TC = 25C  
66  
2
A
J
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
35  
V/ns  
W
Features  
520  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
Silicon Chip on Direct-Copper-Bond  
Substrate  
- High Power Dissipation  
- Isolated Mounting Surface  
- 2500V~ Electrical Isolation  
Avalanche Rated  
Low Package Inductance  
Fast Intrinsic Rectifier  
Low RDS(on) and QG  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
FC  
Mounting Force  
40..120 / 9..27  
N/lb.  
VISOL  
50/60 Hz, RMS t = 1 min  
2500  
3000  
V~  
V~  
IISOL 1 mA  
t = 1 s  
Weight  
8
g
Advantages  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25C Unless Otherwise Specified)  
Min.  
500  
3.0  
Typ.  
Max.  
DC-DC Converters  
Battery Chargers  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
5.0  
Switch-Mode and Resonant-Mode  
Power Supplies  
200 nA  
Uninterrupted Power Supplies  
AC Motor Drives  
IDSS  
50 A  
3 mA  
TJ = 125C  
High Speed Power Switching  
Applications  
RDS(on)  
VGS = 10V, ID = 66A, Note 1  
43 m  
DS100409B(6/14)  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXFL132N50P3  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS264 (IXFL) OUTLINE  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
68  
110  
S
Ciss  
Coss  
Crss  
18.6  
1710  
12  
nF  
pF  
pF  
RGi  
1.16  
42  
td(on)  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 66A  
RG = 1(External)  
tr  
18  
90  
ns  
ns  
td(off)  
1
= Gate  
2,4 = Drain  
= Source  
tf  
15  
ns  
3
Qg(on)  
Qgs  
267  
95  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 66A  
Qgd  
63  
RthJC  
RthCS  
0.24C/W  
C/W  
0.15  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
132  
530  
1.5  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
trr  
QRM  
IRM  
250 ns  
C  
IF = 66A, -di/dt = 100A/s  
1.9  
16.4  
VR = 100V, VGS = 0V  
A
Note  
1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFL132N50P3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
250  
200  
150  
100  
50  
140  
120  
100  
80  
V
= 10V  
8V  
V
= 10V  
8V  
GS  
GS  
7V  
7V  
60  
40  
6V  
5V  
6V  
5V  
20  
0
0
0
5
10  
15  
20  
25  
0
1
2
3
4
5
6
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 66A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
140  
120  
100  
80  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
V
= 10V  
V
= 10V  
GS  
GS  
7V  
I
= 132A  
D
I
= 66A  
D
6V  
5V  
60  
40  
20  
0
0
2
4
6
8
10  
12  
14  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 66A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
GS  
T = 125ºC  
J
T = 25ºC  
J
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
50  
100  
150  
200  
250  
TC - Degrees Centigrade  
ID - Amperes  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXFL132N50P3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
T
J
= - 40ºC  
T
J
= 125ºC  
25ºC  
25ºC  
- 40ºC  
125ºC  
60  
60  
40  
40  
20  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
V
I
= 250V  
DS  
= 66A  
D
I
= 10mA  
G
T
J
= 125ºC  
T
J
= 25ºC  
0
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
0
40  
80  
120  
160  
200  
240  
280  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
1000  
100  
10  
100,000  
10,000  
1,000  
100  
C
iss  
R
Limit  
DS(on)  
100µs  
C
oss  
T
= 150ºC  
= 25ºC  
J
10  
T
C
C
rss  
1ms  
= 1 MHz  
5
f
Single Pulse  
1
1
0
10  
15  
20  
25  
30  
35  
40  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFL132N50P3  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
28  
26  
24  
22  
20  
18  
16  
14  
12  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
R
G
= 1Ω , V = 10V  
GS  
R
= 1ꢀ , V = 10V  
G
GS  
V = 250V  
DS  
V
= 250V  
DS  
T = 125ºC  
J
I
I
= 66A  
D
D
= 100A  
T = 25ºC  
J
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
30  
40  
50  
60  
70  
80  
90  
100  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
300  
250  
200  
150  
100  
50  
120  
24  
22  
20  
18  
16  
14  
12  
10  
115  
110  
105  
100  
95  
t r  
td(on)  
- - - -  
t f  
t
d(off) - - - -  
TJ = 125ºC, V = 10V  
100  
80  
60  
40  
20  
0
GS  
R
G
= 1ꢀ, V = 10V  
GS  
V
= 250V  
DS  
V
= 250V  
DS  
I
= 100A  
D
I
= 66A  
D
I
= 100A  
D
90  
I
= 66A  
D
85  
0
80  
1
2
3
4
5
6
7
8
9
10  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
35  
30  
25  
20  
15  
10  
5
130  
300  
250  
200  
150  
100  
50  
480  
400  
320  
240  
160  
80  
t f  
R
td(off  
) - - - -  
t f  
td(off)  
- - - -  
= 1ꢀ,  
V
= 10V  
GS  
120  
110  
100  
90  
T
J
= 125ºC, VGS = 10V  
G
I
= 100A  
D
V
= 250V  
VDS = 250V  
DS  
T
= 125ºC  
= 25ºC  
J
I
= 66A  
D
T
J
80  
70  
0
0
30  
40  
50  
60  
70  
80  
90  
100  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
ID - Amperes  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXFL132N50P3  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_132N50P3(K9-W38) 6-02-14-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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