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IXBOD1-14D

型号：

IXBOD1-14D

品牌：

IXYS[ IXYS CORPORATION ]

页数：

8 页

PDF大小：

252 K

下载PDF手册
Breakover Diodes  
Applications  
l
Transient voltage protection  
High-voltage switches  
Crowbar  
Lasers  
l
l
l
l
Pulse generators  
i
IH  
IBO  
V
VBO  
VH  
Application Note H - 6  
Remark: For special selection of more than 2 pieces IXBOD 1-... for every  
break down voltage of VBO > 2000 V please contact us.  
© 2000 IXYS All rights reserved  
H - 1  
IXBOD 1 -06...10  
VBO = 600-1000V  
IAVM = 0.9 A  
Single Breakover Diode  
VBO  
V
Standard  
Types  
A
K
600 ±50  
700 ±50  
800 ±50  
900 ±50  
1000 ±50  
IXBOD 1 -06  
IXBOD 1 -07  
IXBOD 1 -08  
IXBOD 1 -09  
IXBOD 1 -10  
Symbol  
Conditions Ratings  
ID  
TVJ = 125°C;  
V = 0,8x VBO  
20  
µA  
VBO  
IRMS  
VBO(TVJ) = VBO, 25°C [1 + KT (TVJ - 25°C)]  
f = 50 HZ;  
Tamb = 50°C  
1.4  
A
connection pins soldered to printed circuit  
(conductor 0,035x2mm)  
IAVM  
ISM  
I²t  
0.9  
200  
2
A
A
tp = 0.1 ms;  
tp = 0.1 ms;  
Tamb = 50°C non repetitive  
Tamb = 50°C  
A2s  
Tamb  
Tstg  
-40...+125  
-40...+125  
125  
°C  
°C  
TVJm  
°C  
Dimensions in mm (1 mm = 0.0394")  
KT Temperatur coefficient of VBO  
KP coefficient for energy per pulse EP (material constant)  
2·10-3  
K-1  
700  
K/Ws  
RthJA  
- natural convection  
- with air speed 2 m/s  
60  
45  
K/W  
K/W  
Weight  
1
g
Symbol  
Conditions  
Characteristic Values  
IBO  
TVJ  
TVJ  
TVJ  
TVJ  
=
=
=
=
25°C  
25°C  
25°C  
50°C;  
15  
30  
mA  
mA  
V
IH  
VH  
4 - 8  
(dv/dt)C  
(di/dt)C  
VD = 0.67·(VBO + 100V)  
> 1000  
200  
V/µs  
A/µs  
K
A
TVJ = 125°C;  
TVJ = 125°C  
VD = VBO ; IT = 80A; f = 50 Hz  
tq(typ)  
VD = 0.67·VBO ; VR = 0V  
150  
µs  
dV/dt(lin.) = 200V/µs; IT = 80A; di/dt = -10A/µs  
VT  
TVJ =125°C; IT = 5A  
1.7  
V
V(TO)  
rT  
For power-loss calculations only  
TVJ = 125°C  
1.1  
0.12  
V
Ω
IXYS reserve at these the right to change limits, test conditions and dimensions; Data according to IEC 60747  
© 2000 IXYS All rights reserved  
H - 2  
IXBOD 1 -06...10  
Fig. 1 Energy per pulse for trapezoidal current wafeforms  
(see waveform definition).  
Fig. 2 Energy per pulse for exponentially decaying  
current pulse (see waveforms definition).  
Va = 0 m/s  
Va = 2 m/s  
[V]  
VT  
[K/W]  
ZthJA  
TVJ = 125°C  
TVJ = 25°C  
iT [A]  
t
[s]  
Fig. 3 On-state voltage  
Fig. 4 Transient thermal resistance.  
© 2000 IXYS All rights reserved  
H - 3  
IXBOD 1 -12R...42R(D)  
Version: RD  
Breakover Diode Modules  
Version: R  
VBO  
V
Standard  
Types  
BOD -  
VBO  
V
Standard  
Types  
BOD -  
VBO  
V
Standard  
Types  
BOD -  
Elements  
Elements  
Elements  
1200 ±50 IXBOD 1 -12R(D)  
1300 ±50 IXBOD 1 -13R(D)  
1400 ±50 IXBOD 1 -14R(D)  
1500 ±50 IXBOD 1 -15R(D)  
1600 ±50 IXBOD 1 -16R(D)  
1700 ±50 IXBOD 1 -17R(D)  
1800 ±50 IXBOD 1 -18R(D)  
1900 ±50 IXBOD 1 -19R(D)  
2
2
2
2
2
2
2
2
2000 ±50 IXBOD 1 -20R(D)  
2100 ±50 IXBOD 1 -21R(D)  
2200 ±50 IXBOD 1 -22R(D)  
2300 ±50 IXBOD 1 -23R(D)  
2400 ±50 IXBOD 1 -24R(D)  
2500 ±50 IXBOD 1 -25R(D)  
2600 ±100 IXBOD 1 -26R(D)  
2800 ±100 IXBOD 1 -28R(D)  
3000 ±100 IXBOD 1 -30R(D)  
3200 ±100 IXBOD 1 -32R(D)  
3
3
3
3
3
3
3
3
3
3
3400 ±100 IXBOD 1 -34R  
3600 ±100 IXBOD 1 -36R  
3800 ±100 IXBOD 1 -38R  
4000 ±100 IXBOD 1 -40R  
4200 ±100 IXBOD 1 -42R  
4
4
4
4
4
2-3 BODs  
Symbol  
Test Conditions  
TVJ  
2 BODs  
3 BODs  
4 BODs  
D-Version  
ID  
=
125°C;V = 0,8x VBO  
100  
100  
100  
100  
µA  
VBO  
IRMS  
VBO(TVJ) = VBO, 25°C [1 + KT (TVJ - 25°C)]  
f = 50 HZ;  
Tamb = 50°C  
2.0  
1.4  
1.1  
0.3  
A
connection pins soldered to printed circuit  
(conductor 0,035x2mm)  
IAVM  
ISM  
I²t  
1.25  
200  
2
0.9  
200  
2
0.7  
200  
2
0.2  
50  
A
A
A2s  
tp = 0.1 ms; Tamb = 50°C non repetitive  
tp = 0.1 ms; Tamb = 50°C  
TVJ =125°C; IT = 5A  
0.125  
27  
VT  
3.4  
2.2  
0.24  
5.1  
3.3  
0.36  
6.8  
4.4  
0.48  
V
V(TO)  
rT  
For power-loss calculations only  
TVJ =125°C  
17.5  
3
V
Ω
Tamb  
Tstg  
TVJm  
-40...+125  
-40...+125  
125  
-40...+125  
-40...+125  
125  
-40...+125  
-40...+125  
125  
-40...+125  
-40...+125  
125  
°C  
°C  
°C  
K-1  
KT Temperatur coefficient of VBO  
2·10-3  
2·10-3  
2·10-3  
2·10-3  
KP coefficient for energy per pulse EP (material constant)  
700  
700  
700  
700  
K/Ws  
RthJA  
- natural convection  
- with air speed 2 m/s  
20  
16  
20  
16  
20  
16  
20  
16  
K/W  
K/W  
Weight  
typical  
14  
14  
14  
14  
g
Symbol  
IBO  
Test Conditions Characteristic Values both Versions R & RD 2 BODs  
3 BODs  
15  
4 BODs  
15  
TVJ  
TVJ  
TVJ  
TVJ  
=
=
=
=
25°C  
25°C  
25°C  
15  
30  
mA  
mA  
V
IH  
30  
30  
VH  
4 - 8  
4 - 8  
4 - 8  
(dv/dt)C  
50°C;  
VD = 0.67·(VBO + 100V)  
- VBO  
bis 1500V  
> 1000  
> 1500  
-
-
-
-
-
-
V/µs  
V/µs  
V/µs  
V/µs  
V/µs  
V/µs  
- VBO 1600 - 2000V  
- VBO 2100 - 2500V  
- VBO 2600 - 3000V  
- VBO 3200 - 3400V  
- VBO 3600 - 4200V  
-
-
-
-
> 2000  
> 2500  
-
-
> 3000  
> 3500  
(di/dt)C  
tq(typ)  
TVJ = 125°C;  
VD = VBO ; IT = 80A; f = 50 Hz  
200  
150  
200  
150  
200  
150  
A/µs  
µs  
TVJ = 125°C  
VD = 0.67·VBO ; VR = 0V  
dv/dt(lin.) = 200V/µs; IT = 80A; di/dt = -10A/µs  
IXYS reserve at these the right to change limits, test conditions and dimensions; Data according to IEC 60747  
© 2000 IXYS All rights reserved  
H - 4  
IXBOD 1 -12R...42R(D)  
A
K
A
K
Dimensions in mm (1 mm = 0.0394")  
Fig. 5 Energy per pulse for single BOD element  
for trapezoidal wave current. EP must be multiplied  
by number of elements for total energy.  
Fig. 6 Energy per pulse for single BOD element  
for exponentially decaying current pulse. EP must  
be multiplied by number of elements for total  
energy.  
n = number of BOD-Elements in series  
[V]  
VT  
[K/W]  
ZthJA  
Va = 0 m/s  
Va = 2 m/s  
t
[s]  
iT [A]  
Fig. 7 On-state voltage at TVJ = 125°C.  
Fig. 8 Transient thermal resistance.  
© 2000 IXYS All rights reserved  
H - 5  
Application  
i
Protection of thyristors against overvoltages in forward  
direction.  
Thyristor  
BOD  
VBO (TVJ) = VBO, 25°C [1+KT(TVJ - 25°C)]  
VD  
Calculation example  
a. The maximum junction temperature shall be  
calculated for a module IXBOD 1 -30R at an  
ambient temperature Ta = 60 °C, an exponentially  
decaying current ITM = 40A, a pulsewidth tp = 2 µs,  
an operating frequency f = 50 Hz and natural  
convection. From the diagram Fig. 6 the energy per  
pulse is obtained:  
b. If following these steady-state conditions an  
overload for 1 minute occurs with ITM= 60 A and a  
pulse-width tp = 4 µs at the same operating  
frequency f = 50 Hz, then the resulting maximum  
junction temperature is calculating as follows:  
TVJmax2 = TVJmax1 + (Ep2-Ep1) • n • f •ZthJA(t) + Kp • (Ep2-Ep1)  
The diagrams Fig. 11 and Fig. 8 show  
Ep1 = 6 x 10-3 Ws  
For a module IXBOD1-30R the number of single  
IXBOD elements is:  
Ep2= 14x10-3 Ws  
n = 3  
ZthJA(t = 1min) = 12K/W  
At natural air cooling the thermal resistance junction  
to ambient amounts to (Fig.8):  
From what follows:  
RthJA = 20K/W  
TVJmax2 = 82.2 + 14.4 + 5,6 = 102.2 °C  
and the unknown temperature can be calculated as:  
TVJmax1 = Ta + n • f • Ep • RthJA + Kp • Ep  
TVJmax1 = 60 + 18 + 4.2 = 82.2°C  
which is allowed because the maximum admissible  
junction temperature TVJM = 125 °C.  
© 2000 IXYS All rights reserved  
H - 6  
Example of a circuit  
A simple emergency triggering circuit.  
R1  
R3  
T
: Thyristor  
R1  
D1  
D3  
D4  
: Current limiting resistance (0 - 200 Ω)  
: Series-diode (fast recovery diode)  
: Protection diode  
D1  
T
IXBOD  
: Zener diode, typical VZ : 3-6 V  
z
R2, C2 : Protection against parasitic triggering;  
recommended values:  
D4 D3  
C2  
C3  
R2 : 100 - 1000 Ω  
C2 : 22 - 47 nF  
R2  
R3, C3 : Snubber network of the thyristor  
Notice  
40  
A
1. A IXBOD element has a maximum reverse  
blocking voltage of 10V.  
IR  
20  
2. For higher reverse voltages a fast, soft recovery  
diode must be connected in series (Fig. 9).  
This diode must fulfill the conditions of Fig. 10.  
10  
8
6
4
i
IR  
2
1
t
tB  
0,1  
µs  
1
2
3
5 7 10  
Fast recovery  
diode  
IXBOD single  
or  
tB  
IXBOD module  
Fig. 10 Maximum peak value of the  
reverse current admissible for a given  
pulse-width tB, which is required for the  
suitable fast recovery series-diode.  
Fig. 9 IXBOD protection by a fast recovery  
diode.  
© 2000 IXYS All rights reserved  
H - 7  
© 2000 IXYS All rights reserved  
H - 8  
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