请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXFH76N06

型号：

IXFH76N06

品牌：

IXYS[ IXYS CORPORATION ]

页数：

10 页

PDF大小：

508 K

下载PDF手册
IXFH 76N06  
IXFH 76N07-11  
IXFH 76N07-12  
Preliminary Data  
VDSS  
60 V  
ID25  
RDS(on)  
trr  
IXFH 76N06  
76 A 11 mΩ 150 ns  
76 A 11 mΩ 150 ns  
76 A 12 mΩ 150 ns  
HiPerFETTM  
IXFH 76N07-11 70 V  
IXFH 76N07-12 70 V  
Power MOSFETs  
N-Channel Enhancement Mode  
High dv/dt, Low trr, HDMOSTM Family  
Symbol  
TestConditions  
Maximum Ratings  
TO-247 AD  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 10 kΩ  
N07  
N06  
N07  
N06  
70  
60  
70  
60  
V
V
V
V
D (TAB)  
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
ID119  
IDM  
IAR  
TC = 25°C (Chip capability = 125 A)  
TC = 119°C, limited by external leads  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
76  
76  
304  
A
A
A
A
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
100  
EAR  
EAS  
TC = 25°C  
30  
2
mJ  
J
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
,
5
V/ns  
TJ ≤ 150°C, RG = 2 Ω  
PD  
TC = 25°C  
360  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +150  
°C  
°C  
°C  
• International standard package  
JEDEC TO-247 AD  
• Low RDS (on) HDMOSTM process  
• Rugged polysilicon gate cell structure  
• Unclamped Inductive Switching (UIS)  
rated  
• Low package inductance (<5 nH)  
- easy to drive and to protect  
• Fast intrinsic Rectifier  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Md  
Mounting torque  
1.15/10 Nm/lb.in.  
Weight  
6
g
Applications  
Symbol  
TestConditions  
Characteristic Values  
• DC-DC converters  
(TJ = 25°C, unless otherwise specified)  
• Synchronous rectification  
• Battery chargers  
min. typ. max.  
• Switched-mode and resonant-mode  
power supplies  
• DC choppers  
• Temperature and lighting controls  
• Low voltage relays  
VDSS  
VGS = 0 V, ID = 250 µA  
N07  
N06  
70  
60  
2.0  
V
V
V
VGS(th)  
IGSS  
VDS = VGS, ID = 250 µA  
VGS = ±20 VDC, VDS = 0  
VDS = 0.8 VDSS  
3.4  
±100 nA  
IDSS  
TJ = 25°C  
TJ = 125°C  
100 µA  
500 µA  
Advantages  
V
GS = 0 V  
• Easy to mount with 1 screw  
(isolated mounting screw hole)  
• Space savings  
RDS(on)  
VGS = 10 V, ID = 40 A  
76N06, 76N07-11  
76N07-12  
11 mΩ  
12 mΩ  
• High power density  
Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2 %  
92785F(4/96)  
©1996IXYSCorporation. All rightsreserved.
IXYSCorporation  
IXYSSemiconductor  
3540 Bassett Street, Santa Clara,CA 95054  
Tel: 408-982-0700 Fax: 408-496-0670  
Edisonstr. 15, D-68623 Lampertheim, Germany  
Tel: +49-6206-5030  
Fax: +49-6206-503629  
IXFH 76N06  
IXFH 76N07-11  
IXFH 76N07-12  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
TO-247 AD Outline  
VDS = 10 V; ID = 40 A, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
30  
40  
S
Ciss  
Coss  
Crss  
4400  
2000  
1200  
pF  
pF  
pF  
P
td(on)  
tr  
td(off)  
tf  
40  
70  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 50 V, ID = 30 A  
RG = 1 Ω (External)  
130  
55  
e
Qg(on)  
Qgs  
240  
30  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = 10 V, VDS = 0.5 VDSS, ID = 40 A  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
120  
RthJC  
RthCK  
0.42 K/W  
K/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.25  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
P
3.55  
5.89  
3.65  
.140 .144  
Symbol  
TestConditions  
Q
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IS  
VGS = 0  
76  
304  
1.5  
A
A
V
ISM  
VSD  
Repetitive; pulse width limited by TJM  
IF = IS, VGS = 0 V,  
Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2 %  
trr  
IF = 25 A, -di/dt = 100 A/µs, TJ = 25°C  
150  
ns  
VR = 25 V  
TJ = 125°C  
250 ns  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025  
IXFH 21N50 IXFH 24N50 IXFH 26N50  
IXFM 21N50 IXFM 24N50  
VDSS  
ID25  
RDS(on)  
trr  
HiPerFETTM  
IXFH/FM 21N50  
IXFH/FM 24N50  
IXFH 26N50  
500 V  
500 V  
500 V  
21 A  
24 A  
26 A  
0.25 Ω 250 ns  
0.23 Ω 250 ns  
0.20 Ω 250 ns  
Power MOSFETs  
N-Channel Enhancement Mode  
High dv/dt, Low trr, HDMOSTM Family  
TO-247 AD (IXFH)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
500  
500  
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
V
TO-247 SMD  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
("S" Suffix)  
(Note 1)  
VGSM  
ID25  
IDM  
IAR  
TC = 25°C  
21N50  
24N50  
26N50  
21N50  
24N50  
26N50  
21N50  
24N50  
26N50  
21  
24  
26  
84  
96  
104  
21  
24  
26  
A
A
A
A
A
A
A
A
A
G
C (TAB)  
E
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
TO-204 AE (IXFM)  
G
D
EAR  
TC = 25°C  
30  
5
mJ  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
V/ns  
PD  
TC = 25°C  
300  
W
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
• International standard packages  
• Low RDS (on) HDMOSTM process  
• Rugged polysilicon gate cell structure  
• Unclamped Inductive Switching (UIS)  
rated  
• Low package inductance  
- easy to drive and to protect  
• Fast intrinsic rectifier  
TJM  
Tstg  
-55 ... +150  
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
TO-204 = 18 g, TO-247 = 6 g  
Weight  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Applications  
• DC-DC converters  
• Synchronous rectification  
• Battery chargers  
• Switched-mode and resonant-mode  
power supplies  
• DC choppers  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
• AC motor control  
• Temperature and lighting controls  
• Low voltage relays  
VDSS  
VGS = 0 V, ID = 250 µA  
500  
2
V
V
VGS(th)  
VDS = VGS, ID = 4 mA  
4
Advantages  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100  
nA  
• Easy to mount with 1 screw (TO-247)  
(isolated mounting screw hole)  
• Space savings  
VDS = 0.8 VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
200  
1
µA  
mA  
• High power density  
©1995 IXYS Corporation. All rights reserved.  
I
91525E(10/95)  
IXYSCorporation  
IXYSSemiconductor  
3540 Bassett Street, Santa Clara,CA 95054  
Tel: 408-982-0700 Fax: 408-496-0670  
Edisonstr. 15, D-68623 Lampertheim, Germany  
Tel: +49-6206-5030  
Fax: +49-6206-503629  
IXFH 21N50 IXFH 24N50 IXFH 26N50  
IXFM 21N50 IXFM 24N50  
TO-247 AD (IXFH) Outline  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
0.25  
0.23  
0.20  
RDS(on) VGS = 10 V, ID = 0.5 ID25  
21N50  
24N50  
26N50  
Ω
Ω
Ω
Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2 %  
gfs  
VDS = 10 V; ID = 0.5 ID25, pulse test  
15  
21  
S
Ciss  
Coss  
Crss  
4200  
450  
135  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
16  
33  
65  
30  
25  
45  
80  
40  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
RG = 2 Ω (External)  
Qg(on)  
Qgs  
Qgd  
135  
28  
62  
160  
40  
85  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
RthJC  
RthCK  
0.42 K/W  
K/W  
0.25  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
TO-204AE (IXFM) Outline  
Symbol  
IS  
TestConditions  
Min. Typ.  
Max.  
VGS = 0  
21N50  
24N50  
26N50  
21  
24  
26  
A
A
A
ISM  
Repetitive;  
pulse width limited by TJM  
21N50  
24N50  
26N50  
84  
96  
104  
A
A
A
VSD  
trr  
QRM  
IRM  
IF = IS, VGS = 0 V,  
Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2 %  
1.5  
V
TJ = 25°C  
TJ = 125°C  
250  
400  
ns  
ns  
IF = IS  
-di/dt = 100 A/µs,  
VR = 100 V  
TJ = 25°C  
TJ = 125°C  
1
2
µC  
µC  
TJ = 25°C  
TJ = 125°C  
10  
15  
A
A
Note 1: Add "S" suffix for TO-247 SMD PACKAGE OPTION (EX: IXFH24N50S)  
TO-247 SMD Outline  
Min. Recommended Footprint  
Dimensions in inches and mm)  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSCorporation  
IXYSSemiconductor  
3540 Bassett Street, Santa Clara,CA 95054  
Tel: 408-982-0700 Fax: 408-496-0670  
Edisonstr. 15, D-68623 Lampertheim, Germany  
Tel: +49-6206-5030  
Fax: +49-6206-503629  
IXFH 21N50 IXFH 24N50 IXFH 26N50  
IXFM 21N50 IXFM 24N50  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSCorporation  
IXYSSemiconductor  
3540 Bassett Street, Santa Clara,CA 95054  
Tel: 408-982-0700 Fax: 408-496-0670  
Edisonstr. 15, D-68623 Lampertheim, Germany  
Tel: +49-6206-5030  
Fax: +49-6206-503629  
IXFH 21N50 IXFH 24N50 IXFH 26N50  
IXFM 21N50 IXFM 24N50  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSCorporation  
IXYSSemiconductor  
3540 Bassett Street, Santa Clara,CA 95054  
Tel: 408-982-0700 Fax: 408-496-0670  
Edisonstr. 15, D-68623 Lampertheim, Germany  
Tel: +49-6206-5030  
Fax: +49-6206-503629  
IXFH 6N90 IXFM 6N90  
IXFH 6N100 IXFM 6N100  
VDSS  
ID25 RDS(on)  
trr  
IXFH/FM 6N90  
900 V 6 A 1.8 Ω 250 ns  
HiPerFETTMPower MOSFET  
IXFH/FM 6N100 1000 V 6 A 2.0 Ω 250 ns  
N-Channel Enhancement Mode  
High dv/dt, Low trr, HDMOSTM Family  
TO-247 AD (IXFH)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
6N90  
900  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
6N100  
1000  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
TO-204 AA (IXFM)  
ID25  
IDM  
IAR  
TC = 25°C  
6
24  
6
A
A
A
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
EAR  
TC = 25°C  
18  
5
mJ  
G
D
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
,
V/ns  
TJ ≤ 150°C, RG = 2 Ω  
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
PD  
TC = 25°C  
180  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
• International standard packages  
• Low RDS (on) HDMOSTM process  
• Rugged polysilicon gate cell structure  
• Unclamped Inductive Switching (UIS)  
rated  
• Low package inductance  
- easy to drive and to protect  
• Fast intrinsic Rectifier  
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
Weight  
TO-204 = 18 g, TO-247 = 6 g  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Applications  
Symbol  
VDSS  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
• DC-DC converters  
• Synchronous rectification  
• Battery chargers  
• Switched-mode and resonant-mode  
power supplies  
VGS = 0 V, ID = 3 mA  
6N90  
900  
V
V
6N100  
1000  
• DC choppers  
• AC motor control  
• Temperature and lighting controls  
• Low voltage relays  
VGS(th)  
IGSS  
VDS = VGS, ID = 2.5 mA  
VGS = ±20 VDC, VDS = 0  
VDS = 0.8 VDSS  
2.0  
4.5  
V
±100  
nA  
IDSS  
TJ = 25°C  
TJ = 125°C  
250  
1
µA  
mA  
VGS = 0 V  
Advantages  
• Easy to mount with 1 screw (TO-247)  
(isolated mounting screw hole)  
• Space savings  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
6N90  
6N100  
1.8  
2.0  
Ω
Ω
Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2 %  
• High power density  
©1996 IXYS Corporation. All rights reserved.  
91529E(10/95)  
IXYSCorporation  
IXYSSemiconductor  
3540 Bassett Street, Santa Clara,CA 95054  
Edisonstr. 15, D-68623 Lampertheim, Germany  
Tel: 408-982-0700  
Fax: 408-496-0670  
Tel: +49-6206-5030  
Fax: +49-6206-503629  
IXFH 6N90 IXFM 6N90  
IXFH 6N100 IXFM 6N100  
Symbol  
gfs  
TestConditions  
Characteristic Values  
TO-247 AD (IXFH) Outline  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
VDS = 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
4
6
S
Ciss  
Coss  
Crss  
2600  
180  
45  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
35 100  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
40 110  
100 200  
60 100  
RG = 4.7 Ω (External)  
Qg(on)  
Qgs  
88 130  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
21  
38  
30  
70  
Qgd  
RthJC  
RthCK  
0.7 K/W  
K/W  
0.25  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
Symbol  
IS  
TestConditions  
VGS = 0  
6
24  
A
A
V
ISM  
Repetitive; pulse width limited by TJM  
TO-204 AA (IXFM) Outline  
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2 %  
trr  
TJ = 25°C  
TJ = 125°C  
250  
400  
ns  
ns  
IF = IS  
-di/dt = 100 A/µs,  
VR = 100 V  
QRM  
TJ = 25°C  
TJ = 125°C  
0.5  
1.0  
µC  
µC  
IRM  
TJ = 25°C  
TJ = 125°C  
7.5  
9.0  
A
A
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXFH 6N90 IXFM 6N90  
IXFH 6N100 IXFM 6N100  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSCorporation  
3540 Bassett Street, Santa Clara,CA 95054  
Tel: 408-982-0700  
IXYSSemiconductor  
Edisonstr. 15, D-68623 Lampertheim, Germany  
Tel: +49-6206-5030 Fax: +49-6206-503629  
Fax: 408-496-0670  
IXFH 6N90 IXFM 6N90  
IXFH 6N100 IXFM 6N100  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
厂商 型号 描述 页数 下载

ILSI

 		IXF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A20AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.192211s