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XTR103AU

型号：

XTR103AU

品牌：

TI[ TEXAS INSTRUMENTS ]

页数：

11 页

PDF大小：

162 K

下载PDF手册
®
XTR103  
XTR103  
XTR103  
4-20mA Current Transmitter with  
RTD EXCITATION AND LINEARIZATION  
FEATURES  
APPLICATIONS  
● LESS THAN ±1% TOTAL ADJUSTED  
ERROR, –40°C TO +85°C  
● INDUSTRIAL PROCESS CONTROL  
● FACTORY AUTOMATION  
● SCADA  
● RTD EXCITATION AND LINEARIZATION  
● TWO OR THREE-WIRE RTD OPERATION  
● WIDE SUPPLY RANGE: 9V to 40V  
● HIGH PSR: 110dB min  
Pt100 NONLINEARITY CORRECTION  
● HIGH CMR: 80dB min  
USING XTR103  
5
4
DESCRIPTION  
The XTR103 is a monolithic 4-20mA, two-wire  
current transmitter designed for Platinum RTD tem-  
perature sensors. It provides complete RTD current  
excitation, instrumentation amplifier, linearization, and  
current output circuitry on a single integrated circuit.  
3
Uncorrected  
RTD Nonlinearity  
2
Corrected  
Nonlinearity  
1
0
Versatile linearization circuitry provides a 2nd-order  
correction to the RTD, typically achieving a 40:1  
improvement in linearity.  
–1  
–200°C  
+850°C  
Instrumentation amplifier gain can be configured for a  
wide range of temperature measurements. Total  
adjusted error of the complete current transmitter,  
including the linearized RTD is less than ±1% over the  
full –40 to +85°C operating temperature range. This  
includes zero drift, span drift and nonlinearity. The  
XTR103 operates on loop power supply voltages down  
to 9V.  
Process Temperature (°C)  
IR = 0.8mA  
IR = 0.8mA  
9 to 40V  
+
VPS  
The XTR103 is available in 16-pin plastic DIP and  
SOL-16 surface-mount packages specified for the  
–40°C to +85°C temperature range.  
4-20 mA  
VO  
XTR103  
RG  
RL  
RTD  
–
RLIN  
International Airport Industrial Park  
•
Mailing Address: PO Box 11400, Tucson, AZ 85734  
FAXLine: (800) 548-6133 (US/Canada Only)  
•
Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706  
•
Tel: (520) 746-1111 • Twx: 910-952-1111  
Internet: http://www.burr-brown.com/  
•
•
Cable: BBRCORP  
•
Telex: 066-6491  
•
FAX: (520) 889-1510  
•
Immediate Product Info: (800) 548-6132  
©1992 Burr-Brown Corporation  
PDS-1145E  
Printed in U.S.A. October, 1993  
SBOS017  
SPECIFICATIONS  
ELECTRICAL  
At TA = +25°C, V+ = 24V, and 2N6121 external transistor, unless otherwise noted.  
XTR103BP/BU  
TYP  
XTR103AP/AU  
TYP  
PARAMETER  
CONDITIONS  
MIN  
MAX  
MIN  
MAX  
UNITS  
OUTPUT  
Output Current Equation  
Total Adjusted Error(1)  
Output Current, Specified Range  
Over-Scale Limit  
Under Scale-Limit  
Full Scale Output Error  
Noise: 0.1Hz to 1kHz  
IO = VIN • (0.016 + 40/RG) + 4mA, VIN in Volts, RG in Ω  
A
% of FS  
mA  
mA  
mA  
TMIN to TMAX  
±1  
20  
±2  
4
✻
✻
✻
✻
34  
3.6  
±15  
8
40  
3.8  
±50  
✻
✻
✻
✻
VIN = 1V, RG = ∞  
±100  
µA  
µAp-p  
R
G = 40Ω  
ZERO OUTPUT(2)  
Initial Error  
vs Temperature  
vs Supply Voltage, V+  
vs Common-Mode Voltage  
VIN = 0, RG = ∞  
4
±5  
±0.2  
0.5  
0.1  
✻
✻
✻
✻
✻
mA  
µA  
µA/°C  
µA/V  
µA/V  
±50  
±0.5  
2
±100  
±1  
✻
V+ = 9V to 40V(3)  
VCM = 2V to 4V(3)  
2
✻
SPAN  
Span Equation (Transconductance)  
Untrimmed Error  
vs Temperature(4)  
Nonlinearity: Ideal Input  
RTD Input  
S = 0.016 + 40/RG  
✻
✻
✻
A/V  
%
ppm/°C  
%
RG ≥ 75Ω  
±0.1  
±1  
✻
±100  
✻
±20  
±50  
0.01  
Pt100: –200°C to +850°C  
RLIN = 1127Ω  
0.1  
✻
%
INPUT  
Differential Range  
Input Voltage Range(3)  
Common-Mode Rejection  
Impedance: Differential  
Common-Mode  
RG = ∞  
1
4
✻
✻
V
V
dB  
GΩ  
GΩ  
mV  
µV/°C  
dB  
2
80  
✻
✻
VIN = 2V to 4V(3)  
100  
3
0.5  
±0.5  
±1  
130  
100  
0.1  
2
✻
✻
✻
✻
±2  
✻
✻
✻
✻
✻
Offset Voltage  
vs Temperature  
±2.5  
±2.5  
✻
±5  
vs Supply Voltage, V+  
Input Bias Current  
vs Temperature  
Input Offset Current  
vs Temperature  
V+ = 9V to 40V(3)  
110  
✻
250  
2
20  
✻
✻
✻
✻
nA  
nA/°C  
nA  
0.01  
0.25  
nA/°C  
CURRENT SOURCES(5)  
Current  
Accuracy  
vs Temperature  
vs Power Supply, V+  
Compliance Voltage(3)  
Matching  
vs Temperature  
vs Power Supply, V+  
0.8  
±0.25  
±25  
50  
✻
✻
±50  
✻
mA  
%
ppm/°C  
ppm/V  
V
%
ppm/°C  
ppm/V  
±0.5  
±50  
±1  
±100  
V+ = 9V to 40V(3)  
V+ = 9V to 40V(3)  
(V–IN) – 0.2  
(V+) – 5  
±0.5  
±25  
✻
✻
✻
✻
±50  
±10  
10  
✻
✻
POWER SUPPLY  
Voltage Range(3), V+  
9
40  
✻
V
TEMPERATURE RANGE  
Specification, TMIN to TMAX  
Operating  
–40  
–40  
85  
125  
✻
✻
✻
✻
°C  
°C  
θJA  
80  
✻
°C/W  
✻ Specification same as XTR103BP.  
NOTES: (1) Includes corrected Pt100 nonlinearity for process measurement spans greater than 100°C, and over-temperature zero and span effects. Does not include  
initial offset and gain errors which are normally trimmed to zero at 25°C. (2) Describes accuracy of the 4mA low-scale offset current. Does not include input amplifier  
effects. Can be trimmed to zero. (3) Voltage measured with respect to IO pin. (4) Does not include TCR of gain-setting resistor, RG. (5) Measured with RLIN = ∞ to  
disable linearization feature.  
®
XTR103  
2
PIN CONFIGURATION  
ABSOLUTE MAXIMUM RATINGS  
Power Supply, V+ (referenced to IO pin) .......................................... 40V  
Input Voltage, V+ , V– (referenced to IO pin) ........................ 0V to V+  
TOP VIEW  
IN  
IN  
Storage Temperature Range ........................................ –55°C to +125°C  
Lead Temperature (soldering, 10s) .............................................. +300°C  
Output Current Limit ............................................................... Continuous  
Junction Temperature ................................................................... +165°C  
1
2
3
4
5
6
7
8
Zero Adjust  
16 Zero Adjust  
15 B (Base)  
14 EINT (Internal Emitter)  
13 IR2  
Zero Adjust  
VI–N  
VI+N  
RG  
RG  
IO  
ELECTROSTATIC  
DISCHARGE SENSITIVITY  
This integrated circuit can be damaged by ESD. Burr-Brown  
recommends that all integrated circuits be handled with  
appropriate precautions. Failure to observe proper handling  
and installation procedures can cause damage.  
12 IR1  
11 E (Emitter)  
10 V+  
RLIN  
9
RLIN  
ESD damage can range from subtle performance degradation  
to complete device failure. Precision integrated circuits may  
be more susceptible to damage because very small parametric  
changes could cause the device not to meet its published  
specifications.  
PACKAGE/ORDERING INFORMATION  
PACKAGE  
DRAWING TEMPERATURE  
PRODUCT  
PACKAGE  
NUMBER(1)  
RANGE  
XTR103AP  
XTR103BP  
XTR103AU  
XTR103BU  
16-pin Plastic DIP  
16-pin Plastic DIP  
SOL-16 Surface Mount  
SOL-16 Surface Mount  
180  
180  
211  
211  
–40°C to +85°C  
–40°C to +85°C  
–40°C to +85°C  
–40°C to +85°C  
NOTE: (1) For detailed drawing and dimension table, please see end of data  
sheet, or Appendix C of Burr-Brown IC Data Book.  
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes  
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change  
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant  
any BURR-BROWN product for use in life support devices and/or systems.  
®
3
XTR103  
TYPICAL PERFORMANCE CURVES  
At TA = +25°C, V+ = 24VDC, unless otherwise noted.  
TRANSCONDUCTANCE vs FREQUENCY  
80  
STEP RESPONSE  
60  
40  
RG = 25Ω  
RS = ∞  
20mA  
4mA  
RG = 100Ω  
RG = 400Ω  
RS = 25Ω  
RG = 2kΩ  
20  
0
RG = ∞  
100µs/Div  
100  
0.1  
0
1k  
10k  
100k  
1M  
100k  
50  
Frequency (Hz)  
COMMON-MODE REJECTION  
vs FREQUENCY (RTI)  
POWER SUPPLY  
REJECTION vs FREQUENCY (RTI)  
120  
100  
80  
140  
120  
100  
80  
G = 0.16A/V  
(RG = 400Ω)  
G = 0.16A/V  
(RG = 400Ω)  
60  
60  
40  
40  
20  
0
20  
0
1
10  
100  
1k  
10k  
0.1  
1
10  
100  
1k  
10k  
100k  
Frequency (Hz)  
Frequency (Hz)  
LOOP RESISTANCE vs LOOP POWER SUPPLY  
INPUT OFFSET VOLTAGE vs LOOP POWER SUPPLY  
60  
50  
40  
30  
20  
1750  
1500  
1250  
1000  
750  
1550Ω  
Span = ∆IO = 16mA  
Without external transistor  
(V+) – 9V  
RL max =  
20mA  
Ω
L = 100  
R
Ω
L = 600  
R
Operating  
Region  
Ω
L = 1k  
500  
R
With external transistor  
10  
0
250  
0
9V  
R
L = 1kΩ  
RL = 600Ω  
RL = 100Ω  
10  
20  
30  
40  
10  
20  
30  
40  
Loop Power Supply Voltage, VPS (V)  
Loop Power Supply Voltage, VPS (V)  
®
XTR103  
4
TYPICAL PERFORMANCE CURVES (CONT)  
At TA = +25°C, +V = 24VDC, unless otherwise noted.  
INPUT CURRENT NOISE DENSITY vs FREQUENCY  
OUTPUT CURRENT NOISE DENSITY vs FREQUENCY  
10  
10  
RG = ∞  
1
1
0.1  
0.1  
0.1  
1
10  
100  
1k  
10k  
100k  
0.1  
1
10  
100  
Frequency (Hz)  
1k  
10k  
100k  
Frequency (Hz)  
INPUT VOLTAGE NOISE DENSITY vs FREQUENCY  
1k  
100  
10  
0.1  
1
10  
100  
1k  
10k  
100k  
Frequency (Hz)  
®
5
XTR103  
Negative input voltage, VIN, will cause the output current to  
be less than 4mA. Increasingly negative VIN will cause the  
output current to limit at approximately 3.6mA.  
APPLICATION INFORMATION  
Figure 1 shows the basic connection diagram for the XTR103.  
The loop power supply, VPS provides power for all circuitry.  
Output loop current is measured as a voltage across the  
series load resistor, RL.  
Increasingly positive input voltage (greater than VFS) will  
produce increasing output current according to the transfer  
function, up to the output current limit of approximately  
34mA.  
Two matched 0.8mA current sources drive the RTD and  
zero-setting resistor, RZ. The instrumentation amplifier in-  
put of the XTR103 measures the voltage difference between  
the RTD and RZ. The value of RZ is chosen to be equal to  
the resistance of the RTD at the low-scale (minimum)  
measurement temperature. RZ can be adjusted to achieve  
4mA output at the minimum measurement temperature to  
correct for input offset voltage and reference current mis-  
match of the XTR103.  
EXTERNAL TRANSISTOR  
Transistor Q1 conducts the majority of the signal-dependent  
4-20mA loop current. Using an external transistor isolates  
the majority of the power dissipation from the precision  
input and reference circuitry of the XTR103, maintaining  
excellent accuracy.  
Since the external transistor is inside a feedback loop its  
RCM provides an additional voltage drop to bias the inputs of  
the XTR103 within their common-mode range. Resistor, RG,  
sets the gain of the instrumentation amplifier according to  
the desired temperature measurement range.  
characteristics are not critical. Requirements are: VCEO  
=
45V min, β = 40 min and PD = 800mW. Power dissipation  
requirements may be lower if the loop power supply voltage  
is less than 40V. Some possible choices for Q1 are listed in  
Figure 1.  
The transfer function through the complete instrumentation  
amplifier and voltage-to-current converter is:  
The XTR103 can be operated without this external transistor  
by connecting pin 11 to 14 (see Figure 2). Accuracy will be  
somewhat degraded by the additional internal power dissipa-  
tion. This effect is most pronounced when the input stage is  
set for high gain (for low full-scale input voltage). The  
typical performance curve “Input Offset Voltage vs Loop  
Supply Voltage” describes this behavior.  
IO = VIN • (0.016 + 40/RG) + 4mA,  
(VIN in volts, RG in ohms, RLIN = ∞)  
where VIN is the differential input voltage. With no RG  
connected (RG = ∞), a 0V to 1V input produces a 4-20mA  
output current. With RG = 25Ω, a 0V to 10mV input pro-  
duces a 4-20mA output current. Other values for RG can be  
calculated according to the desired full-scale input voltage,  
VFS, with the formula in Figure 1.  
VIN = V+IN – V–  
IN  
Possible choices for Q1 (see text).  
= IR (RTD – RZ)  
TYPE  
PACKAGE  
2N4922  
TIP29B  
TIP31B  
TO-225  
TO-220  
TO-220  
13  
12  
IR  
4
V+  
IR  
IN  
10  
V+  
5
RG  
4-20 mA  
IR  
0.8mA  
=
IR  
0.8mA  
=
+
VIN  
–
15  
11  
(2, 3)  
RG  
B
E
Q1  
0.01µF  
XTR103  
+
RL  
–
+
6
3
RG  
V–  
VPS  
–
IO  
RLIN  
IN  
7
9
RLIN  
8
40  
RG  
IO = 4mA + VIN (0.016 +  
)
(3)  
RLIN  
(1, 3)  
RTD  
RZ  
NOTES: (1) RZ = RTD resistance at the minimum measured temperature.  
2500  
RCM = 1.5kΩ  
, where VFS is Full Scale VIN.  
(2)  
RG  
=
Ω
1
– 1  
VFS  
0.01µF  
(3)  
See Table I for values.  
FIGURE 1. Basic RTD Temperature Measurement Circuit.  
®
XTR103  
6
The low operating voltage (9V) of the XTR103 allows  
operation directly from personal computer power supplies  
(12V ±5%). When used with the RCV420 Current Loop  
Receiver (Figure 8), load resistor voltage drop is limited to  
1.5V.  
10  
V+  
LINEARIZATION  
11  
14  
E
On-chip linearization circuitry creates a signal-dependent  
variation in the two matching current sources. Both current  
sources are varied equally according to the following equa-  
XTR103  
0.01µF  
EINT  
tion:  
500 • VIN  
IR1 = IR2 = 0.8 +  
IO  
RLIN  
7
(IR in mA, VIN in volts, RLIN in ohms)  
(maximum IR = 1.0mA)  
For operation without external  
transistor, connect pin 11 to  
pin 14. See text for discussion  
of performance.  
This varying excitation provides a 2nd-order term to the  
transfer function (including the RTD) which can correct the  
RTD’s nonlinearity. The correction is controlled by resistor  
RLIN which is chosen according to the desired temperature  
measurement range. Table I provides the RG, RZ and RLIN  
resistor values for a Pt100 RTD.  
FIGURE 2. Operation Without External Transistor.  
LOOP POWER SUPPLY  
The voltage applied to the XTR103, V+, is measured with  
respect to the IO connection, pin 7. V+ can range from 9V to  
40V. The loop supply voltage, VPS, will differ from the  
voltage applied to the XTR103 according to the voltage drop  
on the current sensing resistor, RL (plus any other voltage  
drop in the line).  
If no linearity correction is desired, do not connect a resistor  
to the RLIN pins (RLIN = ∞). This will cause the excitation  
current sources to remain a constant 0.8mA.  
ADJUSTING INITIAL ERRORS  
Most applications will require adjustment of initial errors.  
Offset errors can be corrected by adjustment of the zero  
resistor, RZ.  
If a low loop supply voltage is used, RL must be made a  
relatively low value to assure that V+ remains 9V or greater  
for the maximum loop current of 20mA. It may, in fact, be  
prudent to design for V+ equal or greater than 9V with loop  
currents up to 34mA to allow for out-of-range input condi-  
tions. The typical performance curve “Loop Resistance vs  
Loop Power Supply” shows the allowable sense resistor  
values for full-scale 20mA.  
Figure 3 shows another way to adjust zero errors using the  
output current adjustment pins of the XTR103. This provides  
a minimum of ±300µA (typically ±500µA) adjustment around  
the initial low-scale output current. This is an output current  
adjustment which is independent of the input stage gain set  
MEASUREMENT TEMPERATURE SPAN ∆T (°C)  
100°C 200°C 300°C 400°C 500°C 600°C 700°C 800°C 900°C 1000°C  
TMIN  
–200°C  
18/90  
653  
18/185 18/286 18/396 18/515 18/645 18/788 18/946 18/1120 18/1317  
838  
996  
1087  
1131  
1152  
1159  
1158  
1154  
1140  
–100°C  
0°C  
60/84  
1105  
60/173 60/270 60/374 60/487 60/610 60/746 60/895 60/1061  
1229  
1251  
1249  
1231  
1207  
1181  
1155  
1128  
100/81 100/167 100/260 100/361 100/469 100/588 100/718 100/860  
1287 1258 1229 1201 1173 1145 1117 1089  
100°C  
200°C  
300°C  
400°C  
500°C  
600°C  
700°C  
800°C  
138/78 138/162 138/252 138/349 138/453 138/567 138/691  
1211 1183 1155 1127 1100 1073 1046  
RZ /RG  
RLIN  
(Values are in Ω.)  
175/76 175/157 175/244 175/337 175/437 175/546  
1137 1110 1083 1056 1030 1003  
212/73 212/152 212/235 212/325 212/422  
1066  
247/71 247/146 247/227 247/313  
996 971 946 921  
280/68 280/141 280/219  
930 905 881  
313/66 313/136  
1039  
1013  
987  
962  
NOTE: Values shown are for a Pt100 RTD.  
Double (x2) all values for Pt200.  
865  
841  
345/64  
803  
375/61  
743  
TABLE I. RZ, RG, and RLIN Resistor Values for Pt100 RTD.  
®
7
XTR103  
Figure 4, shows a three-wire RTD connection for improved  
accuracy with remotely located RTDs. RZ’s current is routed  
through a third wire to the RTD. Assuming line resistance is  
equal in RTD lines 1 and 2, this produces a small common-  
mode voltage which is rejected by the XTR103.  
(a)  
XTR103  
16  
2
OPEN-CIRCUIT DETECTION  
1
10kΩ  
±500µA typical  
output current  
adjustment range.  
The optional transistor Q2 in Figure 4 provides predictable  
behavior with open-circuit RTD connections. It assures that  
if any one of the three RTD connections is broken, the  
XTR103’s output current will go to either its high current  
limit (≈34mA) or low current limit (≈3.6mA). This is easily  
detected as an out-of-range condition.  
(b)  
XTR103  
16  
REVERSE-VOLTAGE PROTECTION  
2
1
Figure 5 shows two ways to protect against reversed output  
connection lines. Trade-offs in an application will determine  
which technique is better. D1 offers series protection, but  
causes a 0.7V loss in loop supply voltage. This may be  
undesirable if V+ can approach the 9V limit. Using D2  
(without D1) has no voltage loss, but high current will flow  
in the loop supply if the leads are reversed. This could  
damage the power supply or the sense resistor, RL. A diode  
with a higher current rating is needed for D2 to withstand the  
highest current that could occur with reversed lines.  
5kΩ  
5kΩ  
±50µA typical  
output current  
adjustment range.  
FIGURE 3. Low-Scale Output Current Adjustment.  
with RG. If the input stage is set for high gain (as required  
with narrow temperature measurement spans) the output  
current adjustment may not provide sufficient range. In these  
cases, offset can be nulled by adjusting the value of RZ.  
SURGE PROTECTION  
TWO-WIRE AND  
Long lines are subject to voltage surges which can damage  
semiconductor components. To avoid damage, the maxi-  
mum applied voltage rating for the XTR103 is 40V. A zener  
diode may be used for D2 (Figure 6) to clamp the voltage  
applied to the XTR103 to a safe level. The loop power  
supply voltage must be lower than the voltage rating of the  
zener diode.  
THREE-WIRE RTD CONNECTIONS  
In Figure 1, the RTD can be located remotely simply by  
extending the two connections to the RTD. With this two-  
wire connection to the RTD, line resistance will introduce  
error. This error can be partially corrected by adjusting the  
values of RZ, RG, and RLIN  
.
Equal line resistances here creates  
a small common-mode voltage  
which is rejected by XTR103.  
13  
12  
IR  
4
V+  
IR  
IN  
10  
V+  
(RLINE  
)
RZ  
5
RG  
Q1  
1
2
0.01µF  
RTD  
RG  
XTR103  
15  
11  
6
3
RG  
V–  
Q2*  
2N2222  
3
7
IN  
9
1.5kΩ  
RCM  
0.01µF  
Resistance in this line causes  
a small common-mode voltage  
which is rejected by XTR103.  
8
RLIN  
Open RTD  
Terminal  
*Q2 optional. Provides  
predictable output  
current if any one  
RTD connection  
is broken:  
IO  
1
2
3
≈ 34mA  
≈3.6mA  
≈3.6mA  
FIGURE 4. Three-Wire Connection for Remotely Located RTDs.  
®
XTR103  
8
There are special zener diode types specifically designed to  
provide a very low impedance clamp and withstand large  
energy surges. These devices normally have a diode charac-  
teristic in the forward direction which also protects against  
reversed loop connections. As noted earlier, reversed loop  
connections would produce a large loop current, possibly  
damaging RL.  
If the RTD sensor is remotely located, the interference may  
enter at the input terminals. For integrated transmitter as-  
semblies with short connection to the sensor, the interfer-  
ence more likely comes from the current loop connections.  
Bypass capacitors on the input often reduce or eliminate this  
interference. Connect these bypass capacitors to the IO  
terminal as shown in Figure 7. Although the DC voltage at  
the IO terminal is not equal to 0V (at the loop supply, VPS)  
this circuit point can be considered the transmitter’s “ground.”  
RADIO FREQUENCY INTERFERENCE  
The long wire lengths of current loops invite radio frequency  
interference. RF can be rectified by the sensitive input  
circuitry of the XTR103 causing errors. This generally  
appears as an unstable output current that varies with the  
position of loop supply or input wiring.  
1N4148  
D1  
Use either D1 or D2.  
See “Reverse Voltage Protection.”  
10  
V+  
0.01µF  
B
D2  
1N4001  
XTR103  
15  
11  
E
RL  
VPS  
IO  
7
FIGURE 5. Reverse Voltage Protection.  
NOTE: (1) Zener diode 36V: 1N4753A  
or  
General Semiconductor Transorb™ 1N6286A  
10  
Use lower voltage zener diodes with loop  
power supply voltages less than 30V for  
increased protection.  
V+  
(1)  
B
XTR103  
15  
11  
Maximum VPS must be less  
E
VPS than minimum voltage rating  
of zener diode.  
RL  
IO  
7
FIGURE 6. Over-Voltage Surge Protection.  
®
9
XTR103  
13  
IR  
12  
IR  
4
5
V+  
IN  
10  
V+  
RZ  
RG  
B
E
0.01µF  
RTD  
RG  
XTR103  
15  
11  
0.01µF  
0.01µF  
6
3
RG  
V–  
7
IN  
9
RCM  
8
0.01µF  
RLIN  
FIGURE 7. Input Bypassing Techniques.  
+12V  
13  
IR  
12  
IR  
1N4148  
0.01µF  
4
V+  
10  
1µF  
IN  
V+  
5
RG  
15  
11  
RG  
448Ω  
XTR103  
B
16  
10  
E
RG  
V–  
11  
3
2
IO  
6
12  
7
VO = 0 to 5V  
15  
14  
IN  
9
3
Pt100  
RCV420  
RLIN  
8
RZ  
138Ω  
100°C to  
600°C  
IO = 4-20mA  
13  
1100Ω  
5
4
1.5kΩ  
1µF  
0.01µF  
–12V  
FIGURE 8. ±12V-Powered Transmitter/Receiver Loop.  
13  
+15V  
12  
1N4148  
0.01µF  
IR  
V+  
IR  
1µF  
1µF  
4
5
10  
V+  
Isolated Power  
from PWS740  
IN  
0
RG  
–15V  
15  
XTR103  
B
E
RG  
16  
10  
RG  
V–  
11  
3
2
IO  
6
3
11  
12  
V+  
7
1
15  
14  
IN  
9
RTD  
RCV420  
RLIN  
9
15  
8
I
O = 4-20mA  
7
8
13  
RZ  
ISO122  
VO  
5
4
1.5kΩ  
0 – 5V  
10  
2
16  
V–  
0.01µF  
FIGURE 9. Isolated Transmitter/Receiver Loop.  
®
XTR103  
10  
IMPORTANT NOTICE  
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue  
any product or service without notice, and advise customers to obtain the latest version of relevant information  
to verify, before placing orders, that information being relied on is current and complete. All products are sold  
subject to the terms and conditions of sale supplied at the time of order acknowledgment, including those  
pertaining to warranty, patent infringement, and limitation of liability.  
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in  
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent  
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily  
performed, except those mandated by government requirements.  
Customers are responsible for their applications using TI components.  
In order to minimize risks associated with the customer’s applications, adequate design and operating  
safeguards must be provided by the customer to minimize inherent or procedural hazards.  
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent  
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other  
intellectual property right of TI covering or relating to any combination, machine, or process in which such  
semiconductor products or services might be or are used. TI’s publication of information regarding any third  
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.  
Copyright 2000, Texas Instruments Incorporated  
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