请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXYX120N120C3

型号：

IXYX120N120C3

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

214 K

下载PDF手册
1200V XPTTM IGBTs  
GenX3TM  
VCES = 1200V  
IC110 = 120A  
VCE(sat)  3.20V  
tfi(typ) = 96ns  
IXYK120N120C3  
IXYX120N120C3  
High-Speed IGBTs  
for 20-50 kHz Switching  
TO-264 (IXYK)  
Symbol  
Test Conditions  
Maximum Ratings  
G
C
E
VCES  
VCGR  
TJ = 25°C to 175°C  
1200  
1200  
V
V
Tab  
TJ = 25°C to 175°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
PLUS247 (IXYX)  
IC25  
TC= 25°C (Chip Capability)  
240  
A
ILRMS  
IC110  
ICM  
Terminal Current Limit  
TC= 110°C  
160  
120  
A
A
G
TC = 25°C, 1ms  
700  
A
C
Tab  
E
IA  
EAS  
TC = 25°C  
TC = 25°C  
60  
2
A
J
G = Gate  
E
= Emitter  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 1  
ICM = 240  
A
C = Collector  
Tab = Collector  
(RBSOA)  
Clamped Inductive Load  
VCE VCES  
PC  
TC = 25°C  
1500  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
Optimized for Low Switching Losses  
Square RBSOA  
International Standard Packages  
Positive Thermal Coefficient of  
Vce(sat)  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Avalanche Rated  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in  
N/lb  
High Current Handling Capability  
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
High Power Density  
Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1200  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 500A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Applications  
5.0  
High Frequency Power Inverters  
UPS  
Motor Drives  
SMPS  
25 A  
TJ = 150C  
TJ = 150C  
1.5 mA  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
VCE(sat)  
IC = IC110, VGE = 15V, Note 1  
2.55  
3.40  
3.20  
V
V
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100451B(9/13)  
IXYK120N120C3  
IXYX120N120C3  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-264 Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
40  
68  
S
Cies  
Coes  
Cres  
9850  
580  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
218  
Qg(on)  
Qge  
Qgc  
412  
73  
nC  
nC  
nC  
IC = IC110, VGE = 15V, VCE = 0.5 • VCES  
180  
td(on)  
tri  
Eon  
td(off)  
tfi  
35  
77  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 100A, VGE = 15V  
6.75  
176  
96  
mJ  
ns  
Terminals:  
1
= Gate  
2,4 = Collector  
Emitter  
VCE = 0.5 • VCES, RG = 1  
3
=
ns  
Note 2  
Eof  
5.10  
mJ  
f
td(on)  
tri  
Eon  
td(off)  
tfi  
33  
72  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 100A, VGE = 15V  
10.30  
226  
mJ  
ns  
VCE = 0.5 • VCES, RG = 1  
120  
ns  
Note 2  
Eoff  
7.20  
mJ  
RthJC  
RthCS  
0.10 °C/W  
°C/W  
0.15  
PLUS247TM Outline  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
Terminals: 1 - Gate  
2 - Collector  
3 - Emitter  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYK120N120C3  
IXYX120N120C3  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
240  
200  
160  
120  
80  
V
= 15V  
GE  
V
= 15V  
GE  
300  
250  
200  
150  
100  
50  
13V  
12V  
11V  
10V  
12V  
11V  
10V  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
6V  
40  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
240  
200  
160  
120  
80  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
12V  
11V  
10V  
9V  
I
= 240A  
C
8V  
7V  
I
= 120A  
C
40  
I
= 60A  
75  
C
6V  
5V  
0
-50  
-25  
0
25  
50  
100  
125  
150  
175  
0
1
2
3
4
5
6
7
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
280  
240  
200  
160  
120  
80  
8
7
6
5
4
3
2
1
T
= 25ºC  
J
I
= 240A  
C
T
J
= 150ºC  
25ºC  
120A  
60A  
- 40ºC  
40  
0
6
7
8
9
10  
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
VGE - Volts  
VGE - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYK120N120C3  
IXYX120N120C3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
16  
14  
12  
10  
8
140  
120  
100  
80  
T
J
= - 40ºC  
VCE = 600V  
IC = 120A  
IG = 10mA  
25ºC  
150ºC  
60  
6
40  
4
20  
2
0
0
0
50  
100  
150  
200  
250  
300  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
100,000  
10,000  
1,000  
280  
240  
200  
160  
120  
80  
= 1 MHz  
f
C
ies  
C
C
oes  
res  
T
= 150ºC  
J
R
= 1  
Ω
G
40  
dv / dt < 10V / ns  
100  
0
0
5
10  
15  
20  
25  
30  
35  
40  
100  
300  
500  
700  
900  
1100  
1300  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
aaaaa  
0.2  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYK120N120C3  
IXYX120N120C3  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
10  
9
18  
16  
14  
12  
10  
8
8
7
6
5
4
3
2
1
14  
12  
10  
8
E
E
on - - - -  
off  
E
R
E
on - - - -  
off  
T = 150ºC , V = 15V  
= 1  
V
Ω  
= 15V  
GE  
J
GE  
G
I
= 100A  
C
V
= 600V  
V
= 600V  
CE  
CE  
8
7
T = 150ºC  
J
6
6
5
4
4
6
I
= 50A  
T = 25ºC  
J
C
2
3
4
2
2
0
1
2
3
4
5
6
7
8
9
10  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
200  
180  
160  
140  
120  
100  
80  
800  
700  
600  
500  
400  
300  
200  
100  
8
7
6
5
4
3
2
1
14  
t f i  
t
d(off) - - - -  
E
R
E
on - - - -  
off  
12  
10  
8
T = 150ºC, V = 15V  
J
GE  
= 1  
V
Ω  
GE = 15V  
G
IC = 100A  
V
= 600V  
CE  
VCE = 600V  
I
= 50A  
C
I
= 100A  
C
6
4
IC = 50A  
2
60  
0
1
2
3
4
5
6
7
8
9
10  
25  
50  
75  
100  
125  
150  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
200  
180  
160  
140  
120  
100  
80  
320  
300  
280  
260  
240  
220  
200  
180  
160  
140  
160  
150  
140  
130  
120  
110  
100  
90  
320  
300  
280  
260  
240  
220  
200  
180  
160  
140  
t f i  
t
d(off) - - - -  
t f i  
t
d(off) - - - -  
R
G
= 1 , V = 15V  
Ω  
R
G
= 1 , V = 15V  
Ω  
GE  
GE  
V
= 600V  
V
= 600V  
CE  
CE  
I
= 50A  
C
T
J
= 150ºC  
I
= 100A  
C
T
J
= 25ºC  
60  
40  
80  
20  
70  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
25  
50  
75  
100  
125  
150  
IC - Amperes  
TJ - Degrees Centigrade  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYK120N120C3  
IXYX120N120C3  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 19. Inductive Turn-on Switching Times vs.  
Collector Current  
td(on)  
- - - -  
90  
80  
70  
60  
50  
40  
30  
20  
37  
36  
35  
34  
33  
32  
31  
30  
160  
140  
120  
100  
80  
84  
76  
68  
60  
52  
44  
36  
28  
20  
t r i  
t r i  
t
d(on) - - - -  
R
G
= 1 , V = 15V  
Ω  
GE  
T = 150ºC, V = 15V  
J
GE  
V
= 600V  
CE  
V
= 600V  
CE  
T = 25ºC  
J
I
= 100A  
C
T = 150ºC  
J
60  
40  
I
= 50A  
C
20  
0
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
Fig. 21. Maximum Peak Load Current vs. Frequency  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
120  
100  
80  
60  
40  
20  
0
40  
38  
36  
34  
32  
30  
28  
t r i  
t
d(on) - - - -  
R
G
= 1 , V = 15V  
Ω  
GE  
V
= 600V  
CE  
I
= 100A  
C
Triangular Wave  
T = 150ºC  
J
T
= 75ºC  
= 600V  
C
V
V
I
= 50A  
CE  
C
= 15V  
GE  
Square Wave  
R
G
= 1ꢀ  
D = 0.5  
25  
50  
75  
100  
125  
150  
10  
100  
1,000  
- KiloHertzs  
fmax  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXY_120N120C3(9P-C91) 9-09-13  
厂商 型号 描述 页数 下载

IXYS

 		IXYA15N65C3D1 [ Preliminary Technical Information ] 6 页

IXYS

 		IXYA20N65B3 [ Advance Technical Information ] 6 页

IXYS

 		IXYA20N65C3D1 [ XPTTM 650V IGBT ] 7 页

LITTELFUSE

 		IXYA50N65C3 [ Insulated Gate Bipolar Transistor, ] 7 页

IXYS

 		IXYA50N65C3-TRL [ Insulated Gate Bipolar Transistor, ] 6 页

IXYS

 		IXYA8N90C3D1 [ 900V XPTTM IGBT ] 7 页

IXYS

 		IXYB82N120C3H1 [ Insulated Gate Bipolar Transistor, 160A I(C), 1200V V(BR)CES, N-Channel, PLUS264, 3 PIN ] 7 页

LITTELFUSE

 		IXYF30N170CV1 [ Insulated Gate Bipolar Transistor, ] 8 页

IXYS

 		IXYF30N450 [ Insulated Gate Bipolar Transistor, ] 4 页

LITTELFUSE

 		IXYF30N450 [ Insulated Gate Bipolar Transistor, ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.224362s