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IXFN50N120SK

型号：

IXFN50N120SK

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

137 K

下载PDF手册
IXFN50N120SK  
ID25  
VDSS  
RDS(on)ꢀmax  
=
48 A  
= 1200 V  
50 mΩ  
SiC Power MOSFET  
=
KelvinꢀSourceꢀgateꢀconnectionꢀꢀ  
KS  
Part number  
IXFN50N120SK  
G
S
D
Dꢀ(3)  
Backside:ꢀisolatedꢀ  
E153432  
G (2)  
KSꢀ(1)  
S (4)  
Features / Advantages:  
Applications:  
Package: SOT-227Bꢀ(minibloc)  
•ꢀHighꢀspeedꢀswitching  
ꢀ withꢀlowꢀcapacitances  
•ꢀHighꢀblockingꢀvoltage  
ꢀ withꢀlowꢀRDS(on)  
•ꢀEasyꢀtoꢀparallelꢀandꢀsimpleꢀtoꢀdrive  
•ꢀResistantꢀtoꢀlatch-up  
•ꢀSolarꢀinverters  
•ꢀHighꢀvoltageꢀDC/DCꢀconverters  
•ꢀMotorꢀdrives  
•ꢀSwitchꢀmodeꢀpowerꢀsupplies  
•ꢀUPS  
•ꢀBatteryꢀchargers  
•ꢀInductionꢀheating  
•ꢀIsolationꢀVoltage:ꢀ3000ꢀV~  
•ꢀIndustryꢀstandardꢀoutline  
•ꢀRoHSꢀcompliant  
•ꢀEpoxyꢀmeetsꢀULꢀ94V-0  
•ꢀBaseꢀplateꢀwithꢀAluminiumꢀnitrideꢀꢀ  
insolation  
•ꢀRealꢀKelvinꢀsourceꢀconnection  
•ꢀAdvancedꢀpowerꢀcycling  
Terms & Conditions of usage  
Theꢀdataꢀcontainedꢀinꢀthisꢀproductꢀdataꢀsheetꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀTheꢀuserꢀwillꢀhaveꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproductꢀ  
dataꢀwithꢀrespectꢀtoꢀhisꢀapplication.Theꢀspecificationsꢀofꢀourꢀcomponentsꢀmayꢀnotꢀbeꢀconsideredꢀasꢀanꢀassuranceꢀofꢀcomponentꢀcharacteristics.Theꢀinformationꢀinꢀtheꢀvalidꢀapplication-ꢀandꢀassemblyꢀnotesꢀmustꢀbeꢀconsi-  
                                          
                                                                                                                      
dered.ꢀShouldꢀyouꢀrequireꢀproductꢀinformationꢀinꢀexcessꢀofꢀtheꢀdataꢀgivenꢀinꢀthisꢀproductꢀdataꢀsheetꢀorꢀwhichꢀconcernsꢀtheꢀspecificꢀapplicationꢀofꢀyourꢀproduct,ꢀpleaseꢀcontactꢀtheꢀsalesꢀoffice,ꢀwhichꢀisꢀresponsibleꢀforꢀyou.  
Dueꢀtoꢀtechnicalꢀrequirementsꢀourꢀproductꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestionꢀpleaseꢀcontactꢀtheꢀsalesꢀoffice,ꢀwhichꢀisꢀresponsibleꢀforꢀyou.  
Shouldꢀyouꢀintendꢀtoꢀuseꢀtheꢀproductꢀinꢀaviation,ꢀinꢀhealthꢀorꢀliveꢀendangeringꢀorꢀlifeꢀsupportꢀapplications,ꢀpleaseꢀnotify.ꢀForꢀanyꢀsuchꢀapplicationꢀweꢀurgentlyꢀrecommend  
-ꢀtoꢀperformꢀjointꢀriskꢀandꢀqualityꢀassessments;  
-ꢀtheꢀconclusionꢀofꢀqualityꢀagreements;  
-ꢀtoꢀestablishꢀjointꢀmeasuresꢀofꢀanꢀongoingꢀproductꢀsurvey,ꢀandꢀthatꢀweꢀmayꢀmakeꢀdeliveryꢀdependentꢀonꢀtheꢀrealizationꢀofꢀanyꢀsuchꢀmeasures.  
IXYS reserves the right to change limits, test conditions and dimensions.  
20160225  
© 2016 IXYS All rights reserved  
1 - 4  
IXFN50N120SK  
MOSFET  
Ratings  
min. typ. max.  
1200  
Symbol Definitions  
Conditions  
max drain source voltage  
VDS(max)  
V
max transient gate source voltage  
continous gate source voltage  
VGS(max)  
VGS  
-10  
-5  
+25  
+20  
V
V
recommendedꢀoperationalꢀvalue  
VGSꢀ=ꢀ20ꢀVꢀ  
drain current  
ID25  
ID80  
ID100  
TCꢀ=ꢀꢀꢀ25°C  
TCꢀ=ꢀꢀꢀ80°C  
TCꢀ=ꢀ100°C  
48  
38  
33  
A
A
A
static drain source on resistance  
gate threshold voltage  
RDSon  
IDꢀ=ꢀ40ꢀA;ꢀVGSꢀ=ꢀ20ꢀVꢀ  
IDꢀ=ꢀꢀꢀ10ꢀmA;ꢀVGSꢀ=ꢀVDS  
TVJꢀ=ꢀꢀꢀ25°C  
TVJꢀ=ꢀ150°C  
40  
84  
52  
mΩ  
mΩ  
VGS(th)  
TVJꢀ=ꢀꢀꢀ25°C  
TVJꢀ=ꢀ150°C  
2.4  
2.8  
2.0  
tbd  
V
V
drain source leakage current  
gate source leakage current  
internal gate resistance  
IDSS  
IGSS  
RG  
VDSꢀ=ꢀ1200ꢀV;ꢀVGSꢀ=ꢀ0ꢀVꢀ  
VDSꢀ=ꢀ0ꢀV;ꢀVGSꢀ=ꢀ20ꢀVꢀ  
fꢀ=ꢀ1ꢀMHz,ꢀVACꢀ=ꢀ25ꢀmV  
TVJꢀ=ꢀꢀꢀ25°C  
TVJꢀ=ꢀꢀꢀ25°C  
1
100  
µA  
µA  
Ω
0.25  
1.8  
input capacitance  
output capacitance  
reverse transfer (Miller) capacitance  
Ciss  
Coss  
Crss  
1895  
150  
10  
pF  
pF  
pF  
VDSꢀ=ꢀ1000ꢀV;ꢀVGSꢀ=ꢀ0ꢀV;ꢀfꢀ=ꢀ1ꢀMHzꢀ TVJꢀ=ꢀꢀꢀ25°C  
VDSꢀ=ꢀ800ꢀV;ꢀIDꢀ=ꢀ40ꢀA;ꢀVGSꢀ=ꢀ-5/20ꢀVꢀ TVJꢀ=ꢀꢀꢀ25°C  
total gate charge  
gate source charge  
gate drain (Miller) charge  
Qg  
Qgs  
Qgd  
115  
28  
37  
nC  
nC  
nC  
turn-on delay time  
current rise time  
turn-off delay time  
current fall time  
td(on)  
tr  
td(off)  
tf  
ns  
ns  
ns  
InductiveꢀswitchingꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀTVJꢀ=ꢀꢀꢀ125°C  
FreeꢀWheelingꢀDiode:ꢀBodyꢀDiodeꢀ@ꢀVGSꢀ=ꢀ-5V  
VDSꢀ=ꢀ800ꢀV;ꢀID = 40A  
ns  
turn-on energy per pulse  
turn-off energy per pulse  
Eon  
Eoff  
VGSꢀ=ꢀ-5/20ꢀV;ꢀRG = 2.5 Ω (external)  
mJ  
mJ  
thermal resistance junction to case  
thermal resistance junction to heatsink  
RthJC  
RthJH  
0.6  
K/W  
K/W  
withꢀheatsinkꢀcompound;ꢀIXYSꢀtestꢀsetup  
0.72  
Source-Drain Diode  
Symbol Definitions  
IS25  
Ratings  
Conditions  
min. typ. max.  
VGSꢀ=ꢀ-5ꢀVꢀ  
TCꢀ=ꢀꢀꢀꢀ25°C  
TCꢀ=ꢀꢀꢀꢀ80°C  
A
A
continuous source current  
IS80  
forward voltage drop  
VSD  
IFꢀ=ꢀ20ꢀA;ꢀVGSꢀ=ꢀ-5ꢀVꢀ  
TVJꢀ=ꢀꢀꢀ25°C  
TVJꢀ=ꢀ150°C  
3.3  
3.1  
V
V
reverse recovery time  
reverse recovery charge (intrinsic diode)  
max. reverse recovery current  
trr  
QRM  
IRM  
54  
285  
15  
ns  
nC  
A
VGSꢀ=ꢀ-5ꢀV;ꢀIF = 40 A  
VRꢀ=ꢀ800ꢀV;ꢀ-diF /dtꢀ=ꢀ1000ꢀA/µs  
TVJꢀ=ꢀꢀꢀ25°C  
Note:  
WhenꢀusingꢀSiCꢀBodyꢀDiodeꢀtheꢀmaximumꢀrecommendedꢀVGSꢀ=ꢀ-5V  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2016 IXYS All rights reserved  
20160225  
2 - 4  
IXFN50N120SK  
Package SOT-227B (minibloc)  
Ratings  
Symbol  
IRMS  
Definitions  
RMS current  
Conditions  
min.  
typ. max. Unit  
perꢀterminal  
A
storage temperature  
operation temperature  
virtual junction temperature  
Tstg  
Top  
TVJ  
-40  
-40  
-40  
150  
150  
175  
°C  
°C  
°C  
Weight  
MD  
30  
g
Nm  
Nm  
mounting torque  
terminal torque  
1.1  
1.1  
1.5  
1.5  
MT  
dSpp/App  
dSpb/Apb  
terminal to backside  
terminal to terminal  
10.5 /ꢀꢀꢀ3.2  
8.6 /ꢀꢀꢀ6.8  
mm  
mm  
creepage distance on surface | striking distance through air  
isolation voltage  
VISOL  
IISOL <ꢀ1ꢀmA;ꢀ50/60ꢀHz,ꢀ tꢀ=ꢀ1ꢀsec.  
3000  
2500  
V
V
ꢀ
tꢀ=ꢀ1ꢀminute  
Product Marking  
Part No.  
Logo  
XXXXX  
®
yywwZ  
abcd  
DateCode  
Assembly Line Assembly Code  
Ordering  
Part Name  
Marking on Product Delivering Mode Base Qty Ordering Code  
IXFN50N120SK Tube 10 517988  
Standard  
IXFN50N120SK  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2016 IXYS All rights reserved  
20160225  
3ꢀ-ꢀ4  
IXFN50N120SK  
Outlines SOT-227B (minibloc)  
Dꢀ(3)  
G (2)  
KSꢀ(1)  
S (4)  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2016 IXYS All rights reserved  
20160225  
4 - 4  
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