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7P008CLF1101I20

型号：

7P008CLF1101I20

品牌：

WEDC[ WHITE ELECTRONIC DESIGNS CORPORATION ]

页数：

11 页

PDF大小：

151 K

下载PDF手册
Compact Linear Flash  
Memory Card - CLF11 Series  
White Electronic Designs  
CLF11 Series Compact Linear Flash Memory Card  
8, 16 and 32 MB (Intel Strata Flash )  
FEATURES  
GENERAL DESCRIPTION  
n
Small Form Factor: CF compatible  
The CLF11 Series Compact Flash memory cards offer  
a low cost linear Flash solid state storage solution for  
code and data storage, high performance disk emula-  
tion, mobile PC and embedded applicationsꢀ  
- 36ꢀ4 x 42ꢀ8 x 3ꢀ3 mm  
Low cost Linear Flash Card  
Single Supply Operation  
- 5V or 3ꢀ3V (Note 1)  
n
n
CLF11 series cards offer memory capacities from 8MB  
to 32MB, with 256kB (2x128kB) block erase sizeꢀ  
n
Fast Read Performance  
- 200ns Maximum Access Time  
It is based on Intel MLC, Strata Flash memoriesꢀ Cards  
are based on the J3 families of memory components:  
built with: 28F128J3, 28F640J3, 28F320J3  
n
n
n
n
Based on MLC J3 Strata Flash Components  
Common Flash Interface (CFI) compliant  
Erase sector size: 2x 128kB  
These flash devices support the Common Flash Inter-  
face (CFI) programming algorithm, a standard that al-  
lows system level software to evaluate the flash con-  
figuration, electrical characteristic, programming param-  
eters and supported functionsꢀ CFI is intended to sup-  
port future upgrades with universal programming algo-  
rithms, so there is no longer a need for continued pro-  
gramming software modification and updatesꢀ Systems  
should be able to recognize and support all devices to  
allow universal expansion/upgrade pathꢀ  
High Performance Random Writes  
- 6µs Typical per Byte Write Time, using 32Byte  
Write buffer  
n
n
Automated Write and Erase Algorithms  
High Write/Erase Endurance:  
100,000 Write/Erase Cycles  
Low Power Consumption  
The symmetrically blocked architecture and single sup-  
ply (universal 3ꢀ3V or 5V for CLF11 cards) operation pro-  
vides a cost effective, high performance, nonvolatile stor-  
age solutionꢀ The Compact Flash Card form factor of-  
fers an industry standard pinout and mechanical out-  
line, allowing density upgrades without system design  
changesꢀ  
n
- 150µA Standby Current  
- 75mA Max Byte Write Current  
Note 1:  
CLF11 supports wide, universal operating voltage: 3V to 5Vꢀ  
That means the card will work in 3ꢀ3V systems as well as in 5V  
systemsꢀ This feature may allow easy exchange of data between  
multiple and different systems and provide easy upgrade / expansion  
pathꢀ  
The CLF11 series is designed as a simple x16 linear  
array of Flash devicesꢀ Two Flash devices provide the  
lower and upper bytes for the 16 bit accessꢀ (See Func-  
tional Truth Table on page 5)  
WEDC’s standard cards are shipped with blank hous-  
ings ꢀ Please contact WEDC sales representative for  
further information on Custom artworkꢀ  
March 2003 Revꢀ 3  
ECO #16070  
1
White Electronic Designs Corporation • (508) 485-4000 • wwwꢀwhiteedcꢀcom  
Compact Linear Flash  
Memory Card - CLF11 Series  
White Electronic Designs  
CLF BLOCK DIAGRAM  
MANUFACTURER AND DEVICE ID CODES  
Device  
Manuf ID Device ID  
Int 28F128J3  
Int 28F640J3  
Int 28F320J3  
89h  
89h  
89h  
18h  
17h  
16h  
CD1  
CE  
1
Enable  
Flash Memory  
D0-D7  
16MB  
Intel 28F128J3  
WR  
RD  
WE  
OE  
RD  
WR  
Flash Memory  
16MB  
Intel 28F128J3  
D8-D15  
Enable  
CE  
2
A1  
-A25  
CC (3-5V)  
GND  
V
RESET  
----  
100k pull up resistors  
CD2  
FIG 1ꢀ BLOCK DIAGRAM FOR 32MB CARD  
Notes:  
1ꢀ A25ꢀꢀ23 pulled down by 100kW resistors  
2ꢀ Open for FVF0x; GND for FVF1x (3ꢀ3V operation)  
Other configurations available: 8MB, 16MB, 16 bit only access, etcꢀ  
Please contact sales department for more information  
White Electronic Designs Corporation • Marlborough MA • (508) 485-4000  
2
Compact Linear Flash  
Memory Card - CLF11 Series  
White Electronic Designs  
For information regarding modes of operation, commands, and programming details  
for the memory components, please consult the Intel StrataFlash J3 data sheetꢀ  
http://developerꢀintelꢀcom/design/flcomp/datashts/290667ꢀhtm  
Writing commands to the CUI enables reading of device data, query, identifier codes, inspection and clearing of the  
status register, and, when VPEN = VPENH, block erasure, program, and lock-bit configurationꢀ  
The Block Erase command requires appropriate command data and an address within the block to be erasedꢀ The  
Byte/Word Program command requires the command and address of the location to be writtenꢀ Set Block Lock-Bit  
commands require the command and block within the device to be lockedꢀ The Clear Block Lock-Bits command  
requires the command and address within the deviceꢀ  
The CUI does not occupy an addressable memory locationꢀ It is written when the device is enabled and WE is  
activeꢀ The address and data needed to execute a command are latched on the rising edge of WE or the first edge  
of CE1 or CE2 that disables the cardꢀ Standard microprocessor write timings are usedꢀ  
PINOUT  
Pin  
1
Signal name  
GND  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
CE1  
A11  
I/O  
Function  
Ground  
Active  
Pin  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
Signal name  
CD1  
DQ11  
DQ12  
DQ13  
DQ14  
DQ15  
CE2  
A22  
I/O  
Function  
Card Detect 1  
Data bit 11  
Active  
O
LOW  
2
I/O  
Data bit 3  
I/O  
3
I/O  
Data bit 4  
I/O  
Data bit 12  
4
I/O  
Data bit 5  
I/O  
Data bit 13  
5
I/O  
Data bit 6  
I/O  
Data bit 14  
6
I/O  
Data bit 7  
I
I
I
I
I
I
I
Data bit 15  
7
I
I
I
I
I
I
Card enable 1  
Address bit 10  
Output enable  
Address bit 11  
Address bit 9  
Address bit 8  
Supply Voltage  
Address bit 7  
Address bit 6  
Address bit 5  
Address bit 4  
Address bit 3  
Address bit 2  
Address bit 1  
Data bit 0  
LOW  
LOW  
Card enable 2  
Address bit 22  
Address bit 21  
Address bit 20  
Write Enable  
Address bit 24  
Supply Voltage  
Address bit 19  
Address bit 18  
Address bit 23  
Address bit 17  
Address bit 16  
Address bit 15  
Address bit 14  
Address bit 13  
Data bit 8  
LOW  
LOW  
8
9
OE  
A21  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
A10  
A20  
A9  
WE  
A8  
A24  
VCC  
A7  
VCC  
I
A19  
I
A6  
I
A18  
I
A5  
I
A23  
I
A4  
I
A17  
I
A3  
I
I
A16  
I
I
A2  
A15  
A1  
I
A14  
I
DQ0  
DQ1  
DQ2  
A12  
I/O  
I/O  
I/O  
I
A13  
I
Data bit 1  
DQ8  
DQ9  
DQ10  
GND  
I/O  
I/O  
O
Data bit 2  
Data bit 9  
Address bit 12  
Card Detect 2  
Data bit 10  
CD2  
O
LOW  
Ground  
LOW  
Notes:  
16 bit operation; using 2 independent Low and High byte enables: single byte access ability  
3
White Electronic Designs Corporation • (508) 485-4000 • wwwꢀwhiteedcꢀcom  
Compact Linear Flash  
Memory Card - CLF11 Series  
White Electronic Designs  
MECHANICAL  
42.8mm  
3.3mm  
36.4mm  
25.78mm  
2 sides  
Pin 26  
Pin 50  
1.00mm  
1mm  
1.60mm  
1.27mm (Pitch)  
Pin 1  
Pin 25  
CARD SIGNAL DESCRIPTION  
Symbol  
A1 - A25  
Type  
Name and Function  
INPUT  
ADDRESS INPUTS: A0 through A25 enable direct addressing of up to 64MB of memory on the card  
DQ0 - DQ15  
INPUT/  
OUTPUT  
DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the bi-directional databusꢀ DQ0 - DQ7 constitute the lower  
(even) byte and DQ8 - DQ15 the upper (odd) byteꢀ DQ15 is the MSBꢀ  
CE1  
OE  
INPUT  
INPUT  
CARD ENABLE 1: CE1 enables card accesses (See below the Functional Truth Table)ꢀ  
OUTPUT ENABLE: Active low signal enabling read data from the memory cardꢀ  
WRITE ENABLE: Active low signal gating write data to the memory cardꢀ  
WE  
INPUT  
CD1, CD2  
OUTPUT  
CARD DETECT 1 and 2: Provide card insertion detectionꢀ These signals are connected to ground internally on the  
memory cardꢀ The host socket interface circuitry shall supply 10K-ohm or larger pull-up resistors on these signal pinsꢀ  
VCC  
CARD POWER SUPPLY: (5ꢀ0V for FVF0x or 3V to 5V for FVF1x)  
GND  
GROUND:  
FUNCTIONAL TRUTH TABLE  
Function Mode  
Standby Mode  
Output Desible  
Read Function  
CE2  
H
CE1  
H
OE  
X
WE  
X
D15-D8  
High-Z  
High-Z  
High-Z  
D7-D0  
High-Z  
L
L
H
H
High-Z  
H
L
L
H
Even-Byte Out  
LOW Byte Access (8 bits)  
Read Function  
HIGH Byte Access (8 bits)  
L
L
H
L
L
L
H
H
L
Odd-Byte Out  
Odd-Byte Out  
XX  
High-Z  
Even-Byte Out  
Even-Byte In  
XX  
Read Function  
Word Access (16 bits)  
WRITE function  
LOW Byte Access (8 bits)  
H
L
L
H
H
H
WRITE function  
HIGH Byte Access (8 bits)  
H
L
L
Odd-Byte In  
Odd-Byte In  
WRITE function  
L
L
Even-Byte In  
Word Access (16 bits)  
White Electronic Designs Corporation • Marlborough MA • (508) 485-4000  
4
Compact Linear Flash  
Memory Card - CLF11 Series  
White Electronic Designs  
COMMAND DEFINITIONS TABLE  
(THE COMMAND DEFINITIONS FOR STRATA FLASH MEMORY)  
1st Bus Cycle  
2nd Bus Cycle  
Command Code Sequence  
Read Array  
Bus Cycꢀ  
Bus Opr  
WR  
Addr  
Data  
FFh  
90h  
70h  
50h  
Bus Opr  
Addr  
Data  
SRD  
1
2
2
1
2
2
1
1
X
Read Identifier Codes  
Read Status Register  
Clear Status Register  
Block Erase  
WR  
X
RD  
RD  
IAID  
X
WR  
X
WR  
X
WR  
BA20h  
WR  
BAD0h  
WR  
Word/Byte Write  
WR  
WA40h  
or  
10h  
WA WD  
Erase/Write Suspend  
Erase/Write Resume  
WR  
X
X
B0h  
D0h  
WR  
(1)  
ABSOLUTE MAXIMUM RATINGS  
Operating Temperature TA (ambient)  
Commercial  
0°C to +70 °C  
Industrial  
-40°C to +85 °C  
55°C to +110 °C  
-0ꢀ5V to VCC+0ꢀ5V  
Storage Temperature  
Voltage on any pin relative to VSS  
Notes:  
1ꢀ Stress greater than those listed under “Absolute Maximum ratings” may cause  
permanent damage to the deviceꢀ This is a stress rating only and functional operation at  
these or any other conditions greater than those indicated in the operational sections of  
this specification is not impliedꢀ Exposure to absolute maximum rating conditions for  
extended periods may affect reliabilityꢀ  
DC CHARACTERISTICS  
VCC SUPPLY VOLTAGE 3V - 5V  
Symbol  
Parameter  
Notes  
Typ  
Max  
35  
Units  
55  
Test Conditions  
ICCR  
VCC Read Current  
16 bit mode  
VCC  
VCC = 5ꢀ0V  
=
=
=
3ꢀ3V  
45  
CC =mVACCVMAX  
tcycle = 200ns  
65  
70  
80  
ICCW  
ICCE  
VCC Program Current  
VCC  
VCC = 5ꢀ0V  
3ꢀ3V  
40  
35  
60  
70  
mA1  
device  
device  
ac  
ac  
VCC Erase Current  
VCC  
VCC = 5ꢀ0V  
3ꢀ3V  
40  
35  
mA1  
ICCSL  
VCC  
VCC  
Sleep  
Current  
Per  
Per  
2
2
devices  
160 CC = 3ꢀ3V250  
µAV  
µAV  
Control Signals = VCC  
Reset = VIH (active)  
ICCS  
Standby  
Current  
devices  
CC = 3ꢀ3V300  
TTL inputs  
Control Signals = VIH  
Reset = VIL (not active)  
Notes:  
CMOS Test Conditions: VIL = VSS ± 0ꢀ2V, VIH = VCC ± 0ꢀ2V  
5
White Electronic Designs Corporation • (508) 485-4000 • wwwꢀwhiteedcꢀcom  
Compact Linear Flash  
Memory Card - CLF11 Series  
White Electronic Designs  
VCC SUPPLY VOLTAGE 3V - 5V  
Symbol  
Parameter  
Notes  
Leakage  
Min  
Max  
Units  
Test Conditions  
IIL  
Input  
Current  
Current  
1,  
2
CC = VCCMAX  
VIN =VCC or VSS  
±20  
ILO  
Output  
Leakage  
1
±2C0C = VCCMAX µAV  
VOUT =VCC or VSS  
VIL  
VIH  
Input Low Voltage  
Input High Voltage  
Output Low Voltage  
Output High Voltage  
1
1
1
1
0
0ꢀ8  
V
V
V
V
V
2ꢀ0  
VCC+0ꢀ5  
0ꢀ4  
VOL  
VOH  
VLKO  
IOL = 2mA  
2ꢀ4  
1
3ꢀ2  
IOH = -2ꢀ0mA  
VCC Erase/Program  
2ꢀ0  
Lockout Voltage  
Notes:  
1ꢀ Values are the same for all card densitiesꢀ  
2ꢀ Exceptions: Leakage currents on CE1, OE and WE will be < 500 µA when VIN = GND due to internal pull-up resistorsꢀ Leakage currents on RST  
will be <150µA when VIN=VCC due to internal pull-down resistorꢀ  
AC CHARACTERISTICS  
READ TIMING PARAMETERS  
(1)  
200ns  
SYMBOL(PCMCIA)  
tC(R)  
Parameter  
Min  
Max  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Read Cycle Time  
200  
ta(A)  
Address Access Time  
200  
200  
100  
20  
0
ta(CE)  
Card Enable Access Time  
Output Enable Access Time  
Address Setup Time  
ta(OE)  
tsu(A)  
tsu(CE)  
th(A)  
Card Enable Setup Time  
Address Hold Time  
20  
20  
0
th(CE)  
Card Enable Hold Time  
tv(A)  
Output Hold from Address Change  
Output Disable Time from CE  
Output Disable Time from OE  
Output Enable Time from CE  
Output Enable Time from OE  
Power Down recovery to Output Delayꢀ VCC = 5V  
tdis(CE)  
tdis(OE)  
ten(CE)  
ten(CE)  
trec(RST)  
90  
90  
5
5
500  
White Electronic Designs Corporation • Marlborough MA • (508) 485-4000  
6
Compact Linear Flash  
Memory Card - CLF11 Series  
White Electronic Designs  
READ TIMING DIAGRAM  
tC(R)  
tH(A)  
tA(A)  
A[25::0]  
CE  
tV(A)  
tA(CE)  
tSU(CE)  
NOTE 1  
NOTE 1  
tH(CE)  
tA(OE)  
tSU(A)  
tDIS(CE)  
tDIS(OE)  
OE  
tEN(OE)  
D[15::0]  
DATA VALID  
Note: Signal may be high or low in this areaꢀ  
WRITE TIMING PARAMETERS  
200ns  
SYM (PCMCIA)  
Parameter  
Min  
200  
120  
20  
Max  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tCW  
tW(WE)  
Write Cycle Time  
Write Pulse Width  
tSU(A)  
Address Setup Time  
tSU(A-WEH)  
tSU(CE-WEH)  
tSU(D-WEH)  
tH(D)  
Address Setup Time for WE  
Card Enable Setup Time for WE  
Data Setup Time for WE  
Data Hold Time  
140  
140  
60  
30  
tREC(WE)  
tDIS(WE)  
tDIS(OE)  
Write Recover Time  
30  
Output Disable Time from WE  
Output Disable Time from OE  
Output Enable Time from WE  
Output Enable Time from OE  
Output Enable Setup from WE  
Output Enable Hold from WE  
90  
90  
tEN(WE)  
5
5
tEN(OE)  
tSU(OE-WE)  
tH(OE-WE)  
tSU(CE)  
10  
10  
0
Card Enable Setup Time from OE  
Card Enable Hold Time  
tH(CE)  
20  
7
White Electronic Designs Corporation • (508) 485-4000 • wwwꢀwhiteedcꢀcom  
Compact Linear Flash  
Memory Card - CLF11 Series  
White Electronic Designs  
WRITE TIMING DIAGRAM  
tC(W)  
A[25::0]  
t
SU(A-WEH)  
SU(CE-WEH)  
SU(CE)  
t
REC(WE)  
t
H(CE)  
t
t
CE  
1
NOTE 1  
NOTE 1  
OE  
tH(OE-WE)  
t
SU(A)  
tW(WE)  
WE  
tH(D)  
t
SU(OE-WE)  
t
SU(D-WEH)  
DATA INPUT  
NOTE 2  
D[15::0](DIN  
)
tDIS(WE)  
tEN(OE)  
tDIS(OE)  
t
EN(WE)  
NOTE 2  
D[15::0](DOUT  
)
Notes: 1ꢀ Signal may be high or low in this areaꢀ  
2ꢀ When the data I/O pins are in the output state, no signals shall be applied to the data pins (D15 - D0) by the host systemꢀ  
(1,2,3)  
DATA WRITE AND ERASE PERFORMANCE  
CLF11: VCC = 3V-5V  
Parameter  
Notes  
Min  
Typ(1)  
200  
180  
0ꢀ8  
Max  
Units  
µs  
Write Buffer Byte program time(time to progꢀ 32Bytes/16Words)  
Byte Program time - Using Word/Byte prog command  
Block Program Time128kB written using Write to Buffer  
Block Erase Time  
- J3 device  
- J3 device  
- J3 device  
- J3 device  
µs  
sec  
sec  
0ꢀ7  
Notes:  
1ꢀ Typical: Nominal voltages and TA = 25°Cꢀ  
2ꢀ Excludes system overheadꢀ  
3ꢀ Valid for all speed optionsꢀ  
White Electronic Designs Corporation • Marlborough MA • (508) 485-4000  
8
Compact Linear Flash  
Memory Card - CLF11 Series  
White Electronic Designs  
PRODUCT MARKING  
EDI  
WED 7P032CLF1101C20 C995 9915  
COMPANYNAME  
PART NUMBER  
LOT CODE/TRACE NUMBER  
DATE CODE  
Note:  
Some products are currently marked with our pre-merger company name/acronym (EDI)ꢀ During our  
transition period, some products will also be marked with our new company name/acronym (WED)ꢀ  
Starting October 2000 all PCMCIA products will be marked only with the WED prefixꢀ  
PART NUMBERING  
7 P 032 CLF11 01 C 20  
CARD TECHNOLOGY  
7 FLASH  
8 SRAM  
PC CARD  
P Standard PCMCIA/Compact Flash  
CARDCAPACITY  
032 32MB  
CARD FAMILY AND VERSION  
- See Card Family and Version Infoꢀ for details (next page)  
PACKAGINGOPTION  
01 Standard, Blank CF  
TEMPERATURERANGE  
C = Commercial 0°C to +70°C  
I
= Industrial  
-40°C to +85°C  
CARD ACCESS TIME  
20 200ns  
9
White Electronic Designs Corporation • (508) 485-4000 • wwwꢀwhiteedcꢀcom  
Compact Linear Flash  
Memory Card - CLF11 Series  
White Electronic Designs  
ORDERING INFORMATION  
7P XXX CLF YY SS T ZZ  
XXX  
008  
016  
032  
8MB (built with 28F320J3)  
16MB (built with 28F640J3)  
32MB (built with 28F128J3)  
YY  
SS  
T
11 J3 based (28F128J3, 28F640J3, 28F320J3)  
01 Blank Housing, Type I, blank  
C
I
= Commercial  
= Industrial  
ZZ  
20 200ns  
PART NUMBER TABLE - COMMON OPTIONS  
INTEL STRATA FLASH BASED CARDS  
WEDC Part Number  
7P016CLF1101C20  
7P032CLF1101C20  
7P064CLF1101C20  
7P016CLF1101I20  
7P032CLF1101I20  
7P064CLF1101I20  
Density  
8MB  
Speed  
200ns  
200ns  
200ns  
200ns  
200ns  
200ns  
Flash Component  
28F320J3  
16MB  
32MB  
8MB  
28F640J3  
28F128J3  
28F320J3  
16MB  
32MB  
28F640J3  
28F128J3  
Notes:  
1ꢀ Other options, including density, architecture and speed are available, please  
contact your WEDC sales representative with your requestꢀ  
White Electronic Designs Corporation • Marlborough MA • (508) 485-4000  
10  
Compact Linear Flash  
Memory Card - CLF11 Series  
White Electronic Designs  
Document Title  
Compact Linear Flash Memory Card - CLF11 Series  
Revision History  
Rev level  
rev 0  
Description  
Date  
Initial release  
February, 2001  
February, 2001  
October, 2001  
May, 2003  
rev 1  
Add separate enable for LOW and HIGH bytes  
Final release  
rev 2  
rev 3  
Industrial tempꢀ added  
11  
White Electronic Designs Corporation • (508) 485-4000 • wwwꢀwhiteedcꢀcom  
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 		7P001FEA0200C15 [ Flash Card, 1MX8, 150ns, CARD-68 ] 6 页

WEDC

 		7P001FEA0300C15 [ Flash Card, 1MX8, 150ns, CARD-68 ] 6 页

WEDC

 		7P001FLG0100C15 [ Flash Card, 512MX16, 150ns, CARD-68 ] 11 页

ETC

 		7P001FLG0100C20 周边其他\n[ Peripheral Miscellaneous ] 13 页

WEDC

 		7P001FLG0100I15 [ Flash Card, 512MX16, 150ns, CARD-68 ] 11 页

WEDC

 		7P001FLG0100I20 [ Flash Card, 512MX16, 200ns, CARD-68 ] 11 页

WEDC

 		7P001FLG0101C15 [ Flash Card, 512MX16, 150ns, CARD-68 ] 11 页

WEDC

 		7P001FLG0101C20 [ Flash Card, 512MX16, 200ns, CARD-68 ] 11 页

WEDC

 		7P001FLG0101I15 [ Flash Card, 512MX16, 150ns, CARD-68 ] 11 页

ETC

 		7P001FLG0101I20 周边其他\n[ Peripheral Miscellaneous ] 13 页

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