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IXFN66N85X

型号：

IXFN66N85X

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

135 K

下载PDF手册
Advance Technical Information  
X-Class HiPerFETTM  
Power MOSFET  
VDSS = 850V  
ID25 = 65A  
RDS(on) 65m  
IXFN66N85X  
D
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
G
S
miniBLOC, SOT-227  
E153432  
S
S
Symbol  
Test Conditions  
Maximum Ratings  
G
VDSS  
VDGR  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
850  
850  
V
V
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
S
D
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
65  
140  
A
A
G = Gate  
D = Drain  
S = Source  
IA  
EAS  
TC = 25C  
TC = 25C  
33  
2.5  
A
J
PD  
TC = 25C  
830  
50  
W
dv/dt  
IS IDM, VDD VDSS, TJ 150°C  
V/ns  
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
International Standard Package  
miniBLOC, with Aluminium Nitride  
Isolation  
Isolation Voltage 2500 V~  
High Current Handling Capability  
Fast Intrinsic Diode  
VISOL  
50/60 Hz, RMS  
IISOL 1mA  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in  
Nm/lb.in  
Avalanche Rated  
Weight  
30  
g
Low RDS(on)  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 8mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS= 0V  
850  
V
V
Applications  
3.5  
5.5  
Switch-Mode and Resonant-Mode  
100 nA  
50 A  
Power Supplies  
IDSS  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
TJ = 125C  
3
mA  
RDS(on)  
VGS = 10V, ID = 33A, Note 1  
65 m  
© 2016 IXYS CORPORATION, All Rights Reserved  
DS100715(4/16)  
IXFN66N85X  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXFN) Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 33A, Note 1  
Gate Input Resistance  
25  
42  
S
RGi  
0.75  
Ciss  
Coss  
Crss  
8900  
8900  
142  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
294  
pF  
pF  
VGS = 0V  
Energy related  
Time related  
VDS = 0.8 • VDSS  
1270  
td(on)  
tr  
td(off)  
tf  
40  
48  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 33A  
(M4 screws (4x) supplied)  
V
105  
20  
RG = 1(External)  
Qg(on)  
Qgs  
230  
53  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 33A  
Qgd  
113  
RthJC  
RthCS  
0.15C/W  
0.05C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
66  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS , VGS = 0V, Note 1  
264  
1.4  
trr  
250  
2.7  
ns  
μC  
A
IF = 33A, -di/dt = 100A/s  
QRM  
IRM  
VR = 100V, VGS = 0V  
21.7  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN66N85X  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
180  
160  
140  
120  
100  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
V
= 10V  
GS  
GS  
9V  
8V  
9V  
8V  
7V  
6V  
60  
7V  
6V  
40  
20  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 33A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
70  
60  
50  
40  
30  
20  
10  
0
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
GS  
V
= 10V  
GS  
8V  
7V  
I
= 66A  
D
I
= 33A  
D
6V  
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
8
9
10  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 33A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
V
= 10V  
GS  
T = 125ºC  
J
BV  
DSS  
T = 25ºC  
J
V
GS(th)  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXFN66N85X  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= 125ºC  
25ºC  
- 40ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 9. Transconductance  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
200  
180  
160  
140  
120  
100  
80  
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
60  
T
J
= 25ºC  
40  
20  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
ID - Amperes  
VSD - Volts  
Fig. 11. Gate Charge  
Fig. 12. Capacitance  
10  
8
100,000  
10,000  
1,000  
100  
V
= 425V  
DS  
C
iss  
I
I
= 33A  
D
G
= 10mA  
6
C
C
oss  
rss  
4
2
10  
= 1 MHz  
f
0
1
0
20  
40  
60  
80  
100 120 140 160 180 200 220 240  
QG - NanoCoulombs  
1
10  
100  
1000  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFN66N85X  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
1000  
100  
10  
120  
100  
80  
60  
40  
20  
0
R
Limit  
)
DS(  
on  
25µs  
100µs  
1ms  
1
T = 150ºC  
J
T
C
= 25ºC  
Single Pulse  
10ms  
0.1  
10  
100  
1,000  
700
0
100  
200  
300  
400  
500  
600  
800  
900  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaaa  
0.3  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_66N85X (U8-D901) 4-08-16  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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