UPS1040CTe3
10 A Dual Schottky Barrier Rectifiers
KEY FEATURES
DESCRIPTION
This UPS1040CTe3 in the Powermite3® package is a high efficiency center-
tap dual Schottky rectifier that is also RoHS compliant offering high
current/power capabilities previously found only in much larger packages.
They are ideal for SMD applications that operate at high frequencies. In
addition to its size advantages, the Powermite3® package includes a full
metallic bottom that eliminates the possibility of solder flux entrapment
during assembly and a unique locking tab act as an efficient heat path to the
heat-sink mounting. Its innovative design makes this device ideal for use
with automatic insertion equipment.
Very low thermal resistance package
Dual center-tap Schottky configuration with
common cathode
RoHS Compliant with e3 suffix part number
Guard-ring-die construction for transient
protection
Efficient heat path with Integral locking bottom
metal tab
Low forward voltage
Full metallic bottom eliminates flux entrapment
Compatible with automatic insertion
Low profile-maximum height of 1mm
Options for screening in accordance with MIL-
PRF-19500 for JAN, JANTX, and JANTXV are
available by adding MQ, MX, or MV prefixes
respectively to part numbers. For example,
designate MXUPS1040CTe3 for a JANTX
(consult factory for Tin-Lead plating).
Optional 100% avionics screening available by
adding MA prefix for 100% temperature cycle,
thermal impedance and 24 hours HTRB
(consult factory for Tin-Lead plating)
IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
40
V
RMS Reverse Voltage
28
10
V
A
V R (RMS)
Io
APPLICATIONS/BENEFITS
Average Rectified Output Current
Switching and Regulating Power supplies.
Silicon Schottky (hot carrier) rectifier for
minimal reverse voltage recovery
Elimination of reverse-recovery oscillations to
reduce need for EMI filtering
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on Rated Load@ Tc =90 ºC
150
A
IFSM
Storage Temperature
Junction Temperature
TSTG
TJ
-55 to +150
-55 to +125
ºC
ºC
Charge Pump Circuits
Reduces reverse recovery loss with low IRM
THERMAL CHARACTERISTICS
(UNLESS OTHERWISE SPECIFIED)
Thermal Resistance (dual device)
Small foot print
190 X 270 mils (1:1 Actual size)
See mounting pad details on pg 5
MECHANICAL & PACKAGING
Junctions-to Bottom (Case)
2.5
ºC/Watt
RθJC
• CASE: Void-free transfer molded
thermosetting epoxy compound meeting
UL94V-0
• FINISH: Annealed matte-Tin plating over
copper and readily solderable per MIL-STD-
750 method 2026 (consult factory for Tin-Lead
plating)
• POLARITY: See figure (left)
• MARKING: S1040CT•
• WEIGHT: 0.072 gram (approx.)
• Package dimension on last page
•
Tape & Reel option: 16 mm tape per Standard
EIA-481-B, 5000 on 13” reel
Copyright © 2007
6/26/2007 Rev C
Microsemi
Page 1
