IXDP 35N60 B
IXDH 35N60 B
IXDH 35N60 BD1 VCE(sat) typ = 2.1 V
VCES
IC25
= 600 V
= 60 A
IGBT
with optional Diode
High Speed,
Low Saturation Voltage
C
C
TO-247 AD
IXDH ...
G
G
G
C
E
E
E
C (TAB)
IXDH 35N60 B IXDH 35N60 BD1
IXDP 35N60 B
Symbol
Conditions
Maximum Ratings
TO-220 AB
IXDP ...
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C; RGE = 20 kW
G
C
E
VGES
VGEM
Continuous
Transient
±20
±30
V
V
C (TAB)
G = Gate,
E = Emitter
C = Collector ,
TAB = Collector
IC25
IC90
ICM
TC = 25°C
60
35
70
A
A
A
TC = 90°C
TC = 90°C, tp =1 ms
RBSOA
VGE= ±15 V, TJ = 125°C, RG = 10 W
Clamped inductive load, L = 30 µH
ICM = 110
VCEK < VCES
A
Features
●
NPT IGBT technology
low switching losses
low tail current
tSC
(SCSOA)
VGE= ±15 V, VCE = 600 V, TJ = 125°C
RG = 10 W, non repetitive
10
µs
●
●
●
●
●
no latch up
PC
TC = 25°C
IGBT
250
80
W
W
short circuit capability
positive temperature coefficient for
easy paralleling
MOS input, voltage controlled
optional ultra fast diode
International standard package
Diode
TJ
-55 ... +150
-55 ... +150
300
°C
°C
°C
●
●
●
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
TO-220
TO-247
0.4 - 0.6
0.8 - 1.2
Nm
Nm
Advantages
●
Space savings
High power density
Weight
Symbol
6
g
●
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Typical Applications
●
AC motor speed control
DC servo and robot drives
DC choppers
Uninteruptible power supplies (UPS)
●
V(BR)CES
VGE(th)
ICES
VGE = 0 V
600
3
V
V
●
IC = 0.7 mA, VCE = VGE
VCE = VCES
5
●
●
Switch-mode and resonant-mode
TJ = 25°C
TJ = 125°C
0.1 mA
mA
power supplies
1
IGES
VCE = 0 V, VGE = ± 20 V
IC = 35 A, VGE = 15 V
± 500 nA
VCE(sat)
2.2
2.7
V
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