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IXYX100N120B3

型号：

IXYX100N120B3

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

206 K

下载PDF手册
Preliminary Technical Information  
1200V XPTTM IGBTs  
GenX3TM  
VCES = 1200V  
IC110 = 100A  
VCE(sat) ≤ 2.6V  
tfi(typ) = 240ns  
IXYK100N120B3  
IXYX100N120B3  
Extreme Light Punch Through  
IGBT for 5-30 kHz Switching  
TO-264 (IXYK)  
G
C
E
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
1200  
1200  
V
V
Tab  
TJ = 25°C to 175°C, RGE = 1MΩ  
PLUS247 (IXYX)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
TC = 25°C (Chip Capability)  
225  
A
ILRMS  
IC110  
ICM  
Terminal Current Limit  
TC = 110°C  
160  
100  
A
A
G
C
Tab  
E
TC = 25°C, 1ms  
530  
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
50  
A
J
G = Gate  
C = Collector  
E
= Emitter  
1.2  
Tab = Collector  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 1Ω  
ICM = 200  
A
(RBSOA)  
Clamped Inductive Load  
@VCE ≤ VCES  
Features  
PC  
TC = 25°C  
1150  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
z
z
z
Optimized for 5-30kHZ Switching  
Square RBSOA  
Positive Thermal Coefficient of  
Vce(sat)  
Avalanche Rated  
International Standard Packages  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
z
z
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
20..120 /4.5..27  
Advantages  
Weight  
TO-264  
PLUS247  
10  
6
g
g
z
High Power Density  
Low Gate Drive Requirement  
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
3.0  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
z
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
z
5.0  
z
25 μA  
mA  
±100 nA  
z
z
TJ = 150°C  
TJ = 150°C  
1
z
IGES  
VCE = 0V, VGE = ±20V  
z
z
VCE(sat)  
IC = IC110, VGE = 15V, Note 1  
2.20  
2.76  
2.60  
V
V
Lamp Ballasts  
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100519A(03/13)  
IXYK100N120B3  
IXYX100N120B3  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-264 Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
30  
52  
S
Cies  
Coes  
Cres  
6000  
367  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
127  
Qg(on)  
Qge  
Qgc  
250  
42  
nC  
nC  
nC  
IC = IC110, VGE = 15V, VCE = 0.5 • VCES  
96  
td(on)  
tri  
Eon  
td(off)  
tfi  
30  
90  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 25°C  
7.7  
153  
240  
7.1  
IC = IC110, VGE = 15V  
Terminals:  
1
= Gate  
2,4 = Collector  
Emitter  
VCE = 0.5 • VCES, RG = 1Ω  
3
=
Note 2  
Eof  
11.5 mJ  
f
td(on)  
tri  
29  
96  
ns  
ns  
Inductive load, TJ = 150°C  
IC = IC110, VGE = 15V  
Eon  
td(off)  
tfi  
11.4  
190  
260  
10.1  
mJ  
ns  
VCE = 0.5 • VCES, RG = 1Ω  
ns  
Note 2  
Eoff  
mJ  
RthJC  
RthCS  
0.13 °C/W  
°C/W  
0.15  
PLUS247TM Outline  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
Terminals: 1 - Gate  
2 - Collector  
3 - Emitter  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
PRELIMANARY TECHNICAL INFORMATION  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYK100N120B3  
IXYX100N120B3  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
200  
180  
160  
140  
120  
100  
80  
VGE = 15V  
VGE = 15V  
11V  
300  
250  
200  
150  
100  
50  
13V  
12V  
11V  
13V  
10V  
9V  
12V  
10V  
9V  
8V  
8V  
60  
7V  
6V  
40  
7V  
6V  
20  
0
0
0
0
7
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
200  
180  
160  
140  
120  
100  
80  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGE = 15V  
VGE = 15V  
13V  
12V  
11V  
10V  
I C = 200A  
9V  
I C = 100A  
8V  
7V  
60  
40  
I C = 50A  
6V  
20  
5V  
5
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
1
2
3
4
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
7
6
5
4
3
2
1
TJ = 25ºC  
I C = 200A  
60  
TJ = 150ºC  
100A  
25ºC  
- 40ºC  
40  
20  
50A  
12  
0
8
9
10  
11  
13  
14  
15  
3.5  
4.5  
5.5  
6.5  
7.5  
8.5  
9.5  
VGE - Volts  
VGE - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYK100N120B3  
IXYX100N120B3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 600V  
I C = 100A  
I G = 10mA  
25ºC  
150ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0
20  
40  
60  
80  
100 120 140 160 180 200 220 240 260  
QG - NanoCoulombs  
IC - Amperes  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
10,000  
1,000  
100  
200  
160  
120  
80  
C
C
ies  
oes  
C
res  
TJ = 150ºC  
RG = 1  
40  
Ω
dv / dt < 10V / ns  
= 1 MHz  
5
f
0
10  
200  
300  
400  
500  
600  
700  
800  
900 1000 1100 1200 1300  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
aaaaaa  
0.3  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYK100N120B3  
IXYX100N120B3  
Fig. 13. Inductive Switching Energy Loss vs.  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Collector Current  
12  
11  
10  
9
16  
14  
12  
10  
8
13  
12  
11  
10  
9
18  
16  
14  
12  
10  
8
E
E
on - - - -  
VGE = 15V  
off  
RG = 1  
E
E
on - - - -  
off  
Ω ,  
VCE = 600V  
TJ = 150ºC , VGE = 15V  
VCE = 600V  
TJ = 150ºC  
I C = 100A  
8
7
6
I C = 50A  
8
TJ = 25ºC  
6
4
7
6
5
2
4
0
6
4
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
800  
550  
500  
450  
400  
350  
300  
250  
200  
150  
12  
11  
10  
9
16  
14  
12  
10  
8
t f i  
td(off)  
- - - -  
E
E
on - - - -  
off  
700  
600  
500  
400  
300  
200  
100  
0
TJ = 150ºC, VGE = 15V  
RG = 1  
VGE = 15V  
Ω ,  
VCE = 600V  
VCE = 600V  
I C = 50A  
I C = 100A  
8
7
6
I C = 100A  
6
4
I C = 50A  
5
2
4
0
25  
50  
75  
100  
125  
150  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
700  
600  
500  
400  
300  
200  
100  
340  
300  
260  
220  
180  
140  
100  
600  
550  
500  
450  
400  
350  
300  
250  
200  
290  
270  
250  
230  
210  
190  
170  
150  
130  
t f i  
t
d(off) - - - -  
t f i  
td(off)  
- - - -  
RG = 1  
, VGE = 15V  
Ω
RG = 1  
,
VGE = 15V  
Ω
VCE = 600V  
VCE = 600V  
I C = 50A  
TJ = 150ºC  
TJ = 25ºC  
I C = 100A  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
25  
50  
75  
100  
125  
150  
IC - Amperes  
TJ - Degrees Centigrade  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYK100N120B3  
IXYX100N120B3  
Fig. 19. Inductive Turn-on Switching Times vs.  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
- - - -  
140  
120  
100  
80  
34  
32  
30  
28  
26  
24  
22  
160  
140  
120  
100  
80  
55  
50  
45  
40  
35  
30  
25  
20  
tr i  
td(on)  
t r i  
td(on)  
- - - -  
RG = 1  
,
VGE = 15V  
Ω
TJ = 150ºC, VGE = 15V  
VCE = 600V  
VCE = 600V  
TJ = 150ºC, 25ºC  
I C = 100A  
60  
I C = 50A  
60  
40  
40  
20  
20  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
160  
140  
120  
100  
80  
32  
31  
30  
29  
28  
27  
26  
25  
24  
tr i  
td(on)  
- - - -  
RG = 1  
,
VGE = 15V  
Ω
VCE = 600V  
I C = 100A  
60  
40  
I C = 50A  
20  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXY_100N120B3(9T)12-13-12  
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