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VUB50-16PO1

型号:

VUB50-16PO1

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

83 K

Advanced Technical Information  
VUB 50  
VRRM = 1200/1600 V  
IdAVM = 56 A  
Three Phase Rectifier Bridge  
with IGBT and Fast Recovery Diode  
for Braking System in ECO-PAC 2  
V16  
A4  
VRRM  
Type  
D
V
D1  
D2  
D3  
D4  
D5  
N7  
1200  
1600  
VUB 50-12 PO1  
VUB 50-16 PO1  
K1  
D1  
G1  
T
D6  
X18  
L9  
R9  
Features  
Input Rectifier D1 - D6  
• three phase mainrectifier  
• brake chopper:  
IGBT with low saturation voltage  
PerFREDTM free wheeling diode  
• me package:  
- high level of integration  
- solder terminals for PCB mounting  
- isolated DCB ceramic base plate  
Symbol  
VRRM  
Conditions  
Maximum Ratings  
1200/1600  
V
IFAV  
IDAVM  
IFSM  
TC = 100°C; sine 180°  
22  
56  
300  
A
A
TC = 100°C; rectangular; d = 1/3; bridge  
TVJ = 25°C; t = 10 ms; sine 50 Hz  
Ptot  
TC = 25°C  
90  
Applications  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
m. typ. max.  
drives with  
• mains input  
• DC link  
• inverter or chopper feeding the machine  
• motor and generator/brake operation  
VF  
IR  
IF = 45 A;  
VR = VRRM  
TVJ = 25°C  
TVJ = 125°C  
1.3  
.2  
1.6  
V
V
;
TVJ = 25°C  
0.2 mA  
mA  
VR = 0.8VRRM; TVJ = 125°C  
0.4  
1.8  
RthJC  
RthJH  
per diode; rectangular 120°  
with heat transfer paste  
1.45 K/W  
K/W  
Chopper Diode D  
Symbol  
VRRM  
Conditions  
Maximum Ratings  
TVJ = 25°C to C  
1200  
V
IF25  
IF80  
DC; = 25°C  
C; TC 80°C  
15  
10  
A
A
Symbol  
Conons  
Characteristic Values  
min. typ. max.  
VF  
IR  
IF = 10 A; TVJ = 25°C  
TVJ = 125°C  
2.6  
1.9  
3.0  
V
V
VR = VRRM  
;
TVJ = 25°C  
TVJ = 125°C  
0.06 mA  
mA  
0.06  
IRM  
trr  
IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C  
VR = 600 V  
13  
110  
A
ns  
RthJC  
RthJH  
3.5 K/W  
K/W  
with heat transfer paste  
5
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2002 IXYS All rights reserved  
1 - 2  
VUB 50  
Dimensions in mm (1 mm = 0.0394")  
Chopper Transistor T  
Symbol  
VCES  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
1200  
V
V
±
VGES  
20  
IC25  
IC80  
DC; TC = 25°C  
DC; TC = 80°C  
18  
14  
A
A
±
ICM  
VCEK  
VGE = 15 V; R = 82 ; TVJ = 125°C  
20  
VCES  
A
RBSOA; L = 1G00 µH; clamped inductive load  
Symbol  
VCE(sat)  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
IC = 10 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.3  
2.7  
2.7  
V
V
VGE(th)  
ICES  
IC = 0.4 mA; VGE = VCE  
4.5  
6.5  
V
VCE = VCES; VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.5 mA  
m
0.8  
±
IGES  
VCE = 0 V; VGE  
=
20 V  
200 nA  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
50  
40  
290  
60  
1.2  
1.1  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load, TVJ = 125°C  
CE = 600 V; IC = 10 A  
V
±
VGE = 15 V; RG = 82 Ω  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE= 600 V; VGE = 15 V; IC = 10 A  
600  
45  
pF  
nC  
RthJC  
RthJH  
1.4 K/W  
K/W  
with heat transfer paste  
2.7  
Module  
Symbol  
Conditions  
Maximum Ratings  
TVJ  
Tstg  
-40...+150  
-40...+125  
°C  
°C  
VISOL  
Md  
I
L mA; 50/60 Hz; t = 1 sec  
3600  
V~  
Mting torque (M5)  
1.5 - 2  
14 - 18  
Nm  
lb.in.  
Symbol  
Conditions  
Characteristic Values  
min.  
typ. max.  
dA, dS  
pin to heatsink  
11.2  
mm  
g
Weight  
24  
© 2002 IXYS All rights reserved  
2 - 2  
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