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IXFX1806

型号:

IXFX1806

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

41 K

HiPerFETTM  
Power MOSFETs  
IXFX 1806  
VDSS = 500 V  
ID25  
=
=
53 A  
RDS(on)  
90 mW  
Single MOSFET Die  
trr £ 250 ns  
Preliminary data sheet  
PLUS247TM  
Symbol  
TestConditions  
Maximum Ratings  
(IXFX)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MW  
500  
500  
V
V
D (TAB)  
G
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
D
ID25  
IDM  
IAR  
TC = 25°C (MOSFET chip capability)  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
53  
212  
53  
A
A
A
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
EAR  
TC = 25°C  
TC = 25°C  
60  
mJ  
EAS  
3
5
J
Features  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
V/ns  
l International standard package  
l Low RDS (on) HDMOSTM process  
l Rugged polysilicon gate cell structure  
l Unclamped Inductive Switching (UIS)  
rated  
l Low package inductance  
- easy to drive and to protect  
l Fast intrinsic rectifier  
PD  
TC = 25°C  
520  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
1.6 mm (0.063 in.) from case for 10 s  
Mountingtorque  
300  
°C  
Md  
1.13/10 Nm/lb.in.  
Weight  
6
g
Applications  
l
DC-DC converters  
Battery chargers  
Switched-mode and resonant-mode  
l
l
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
power supplies  
DC choppers  
l AC motor control  
l
min. typ. max.  
VDSS  
VGS = 0 V, ID = 5mA  
500  
2.0  
V
l
Temperature and lighting controls  
VGS(th)  
VDS = VGS, ID = 8mA  
4.0 V  
IGSS  
VGS = ±20 V, VDS = 0  
±100 nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
100 mA  
l
PLUS 247TM package for clip or spring  
mounting  
Space savings  
High power density  
2 mA  
l
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Note 1  
90 mW  
l
© 2001 IXYS All rights reserved  
98797 (01/01)  
IXFX 1806  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
PLUS247TM Outline  
VDS = 10 V; ID = 0.5 • ID25  
Note 1  
45  
S
Ciss  
Coss  
Crss  
9400  
1280  
460  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
45  
60  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1 W (External),  
120  
45  
Terminals: 1 - Gate  
2 - Drain (Collector)  
Qg(on)  
Qgs  
330  
55  
nC  
nC  
nC  
3-Source(Emitter)  
4 - Drain (Collector)  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Dim.  
Millimeter  
Inches  
Qgd  
155  
Min.  
Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
RthJC  
RthCK  
0.22 K/W  
K/W  
0.15  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
e
L
L1  
5.45 BSC  
19.81 20.32  
3.81  
.215 BSC  
.780 .800  
.150 .170  
Symbol  
TestConditions  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IS  
VGS = 0 V  
53  
A
A
ISM  
Repetitive;  
212  
pulse width limited by TJM  
VSD  
IF = 100 A, VGS = 0 V, Note 1  
1.5  
V
trr  
250 ns  
IF = 50A,-di/dt = 100 A/ms, VR = 100 V  
QRM  
IRM  
1.4  
13  
mC  
A
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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