找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

UZTX751

型号:

UZTX751

品牌:

ZETEX[ ZETEX SEMICONDUCTORS ]

页数:

3 页

PDF大小:

127 K

PNP SILICON PLANAR  
MEDIUM POWER TRANSISTORS  
ISSUE 3 – JULY 2005  
ZTX750  
ZTX751  
FEATURES  
*
*
*
*
60 Volt VCEO  
2 Amp continuous current  
Low saturation voltage  
Ptot= 1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
ZTX750  
-60  
ZTX751  
-80  
UNIT  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
A
A
-45  
-60  
-5  
-6  
-2  
Peak Pulse Current  
Continuous Collector Current  
IC  
Power Dissipation: at Tamb=25°C  
derate above 25°C  
Ptot  
1
5.7  
W
mW/°C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +200  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated)  
amb  
ZTX750  
ZTX751  
PARAMETER  
SYMBOL  
V(BR)CBO  
UNIT CONDITIONS.  
MIN. TYP. MAX. MIN. TYP. MAX.  
Collector-Base  
Breakdown  
Voltage  
Collector-Emitter  
Breakdown  
Voltage  
Emitter-Base  
Breakdown  
Voltage  
Collector Cut-Off  
Current  
-60  
-45  
-5  
-80  
-60  
-5  
V
V
V
IC=-100µA  
IC=-10mA  
IE=-100µA  
V(BR)CEO  
V(BR)EBO  
ICBO  
-0.1  
-10  
VCB=-45V  
µA  
µA  
µA  
µA  
µA  
-0.1  
VCB=-60V  
VCB=-45V,Tamb=100°C  
VCB=-60V,Tamb=100°C  
VEB=-4V  
-10  
-0.1  
Emitter Cut-Off  
Current  
IEBO  
-0.1  
Collector-Emitter  
Saturation Voltage  
Base-Emitter  
VCE(sat)  
VBE(sat)  
VBE(on)  
hFE  
-0.15 -0.3  
-0.28 -0.5  
-0.15 -0.3  
-0.28 -0.5  
V
V
V
IC=-1A, IB=-100mA  
IC=-2A, IB=-200mA  
IC=-1A, IB=-100mA  
-0.9  
-1.25  
-0.9  
-1.25  
Saturation Voltage  
Base-Emitter  
-0.8  
-1  
-0.8  
-1  
V
IC=-1A, VCE=-2V  
Turn-On Voltage  
Static Forward  
Current Transfer  
Ratio  
70  
200  
200  
170  
80  
70  
200  
200  
170  
80  
IC=-50mA, VCE=-2V*  
IC=-500mA,VCE=-2V*  
IC=-1A, VCE=-2V*  
IC=-2A, VCE=-2V*  
IC=500mA, VCC=10V  
IB1=IB2=50mA  
100  
80  
300  
30  
100  
80  
300  
30  
40  
40  
Switching Times  
Output Capacitance  
ton  
45  
45  
toff  
800  
800  
Cobo  
pF  
VCB=10V f=1MHz  
3-257  
ZTX750  
ZTX751  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
ZTX750  
ZTX751  
PARAMETER  
SYMBOL  
fT  
UNIT CONDITIONS.  
MIN. TYP. MAX. MIN. TYP. MAX.  
Transition  
Frequency  
100 140  
100 140  
MHz IC=-100mA, VCE=-5V  
f=100MHz  
Switching Times  
ton  
40  
40  
ns  
ns  
pF  
IC=-500mA, VCC=-10V  
IB1=IB2=-50mA  
toff  
450  
450  
Output  
Capacitance  
Cobo  
30  
30  
VCB=10V f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
MAX.  
UNIT  
Thermal Resistance:Junction to Ambient1  
Junction to Ambient2  
Junction to Case  
Rth(j-amb)1  
Rth(j-amb)2  
Rth(j-case)  
175  
116  
70  
°C/W  
°C/W  
°C/W  
†
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.  
2.5  
2.0  
200  
D=1 (D.C.)  
t
1
D=t1/tP  
Case temperature  
t
P
1.5  
100  
D=0.5  
1.0  
0.5  
0
D=0.2  
D=0.1  
Single Pulse  
0
0.0001 0.001  
-40 -20  
0
20  
0.01  
0.1  
1
10  
100  
40 60 80 100 120 140 160 180 200  
T -Temperature (°C)  
Pulse Width (seconds)  
Derating curve  
Maximum transient thermal impedance  
3-258  
ZTX750  
ZTX751  
TYPICAL CHARACTERISTICS  
0.6  
0.5  
0.4  
td  
tr  
tf  
IB1=IB2=IC/10  
ts  
ns  
ns  
140  
120  
100  
80  
700  
600  
500  
IC/IB=10  
ts  
td  
0.3  
0.2  
0.1  
tf  
tr  
400  
300  
200  
100  
60  
40  
20  
0
0
0
0.0001  
0.001  
0.01  
0.1  
1
10  
0.1  
1
IC - Collector Current (Amps)  
CE(sat)  
IC - Collector Current (Amps)  
C
v I  
V
Switching Speeds  
1.4  
225  
1.2  
1.0  
175  
125  
VCE=2V  
IC/IB=10  
0.8  
0.6  
75  
0
0.01  
0.1  
1
10  
0.001 0.01  
0.1  
1
10  
0.0001  
IC - Collector Current (Amps)  
FE  
IC - Collector Current (Amps)  
BE(sat)  
C
v I  
h
C
v I  
V
Single Pulse Test at Tamb=25°C  
10  
1
1.2  
1.0  
VCE=2V  
D.C.  
1s  
100ms  
10ms  
1.0ms  
100µs  
0.8  
0.6  
0.4  
0.1  
X750  
ZT  
ZTX751  
0.001 0.01  
0.1  
1
10  
0.0001  
0.01  
0.1  
1
10  
100  
IC - Collector Current (Amps)  
BE(on)  
VCE - Collector Voltage (Volts)  
C
v I  
V
Safe Operating Area  
3-259  
厂商 型号 描述 页数 下载

NICHICON

UZT1A100MCL 铝电解电容器[ ALUMINUM ELECTROLYTIC CAPACITORS ] 1 页

NICHICON

UZT1A101MCL 铝电解电容器[ ALUMINUM ELECTROLYTIC CAPACITORS ] 1 页

NICHICON

UZT1A220MCL 铝电解电容器[ ALUMINUM ELECTROLYTIC CAPACITORS ] 1 页

NICHICON

UZT1A330MCL 铝电解电容器[ ALUMINUM ELECTROLYTIC CAPACITORS ] 1 页

NICHICON

UZT1A470MCL 铝电解电容器[ ALUMINUM ELECTROLYTIC CAPACITORS ] 1 页

NICHICON

UZT1A470MCR1GB [ Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 10V, 20% +Tol, 20% -Tol, 47uF, Surface Mount, 2626, 4.5 MML CHIP ] 1 页

NICHICON

UZT1C100MCL 铝电解电容器[ ALUMINUM ELECTROLYTIC CAPACITORS ] 1 页

NICHICON

UZT1C100MCL1GB [ Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 16V, 20% +Tol, 20% -Tol, 10uF, Surface Mount, 1717, 4.5MML CHIP, ROHS COMPLIANT ] 1 页

NICHICON

UZT1C100MCR1GB [ Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 16V, 20% +Tol, 20% -Tol, 10uF, Surface Mount, 1717, 4.5 MML CHIP ] 1 页

NICHICON

UZT1C101MCL 铝电解电容器[ ALUMINUM ELECTROLYTIC CAPACITORS ] 1 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.213726s