请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXBH20N300

型号：

IXBH20N300

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

224 K

下载PDF手册
High Voltage, High Gain  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
VCES = 3000V  
IC110 = 20A  
VCE(sat) ≤ 3.2V  
IXBH20N300  
IXBT20N300  
TO-268 (IXBT)  
G
Symbol  
Test Conditions  
Maximum Ratings  
E
VCES  
VCGR  
TC = 25°C to 150°C  
3000  
3000  
V
V
C (Tab)  
TJ = 25°C to 150°C, RGE = 1MΩ  
TO-247 (IXBH)  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
50  
20  
140  
A
A
A
G
C
C (Tab)  
SSOA  
(RBSOA)  
V
GE = 15V, TVJ = 125°C, RG = 20Ω  
ICM = 130  
1500  
A
V
E
Clamped Inductive Load  
G = Gate  
E = Emiiter  
C
= Collector  
PC  
TC = 25°C  
250  
W
Tab = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Features  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
z
Weight  
TO-247  
TO-268  
6
4
g
g
High Blocking Voltage  
z Anti-Parallel Diode  
z International Standard Packages  
z Low Conduction Losses  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Advantages  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
3000  
2.5  
V
V
5.0  
z Low Gate Drive Requirement  
z High Power Density  
ICES  
VCE = 0.8 • VCES, VGE = 0V  
35 μA  
1.5 mA  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
Applications:  
VCE(sat)  
IC = 20A, VGE = 15V, Note 1  
2.7  
3.2  
3.2  
V
V
z Switch-Mode and Resonant-Mode  
Power Supplies  
TJ = 125°C  
z Uninterruptible Power Supplies (UPS)  
z Laser Generators  
z Capacitor Discharge Circuits  
z AC Switches  
© 2012 IXYS CORPORATION, All Rights Reserved  
DS100124A(12/12)  
IXBH20N300  
IXBT20N300  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-268 Outline  
Min.  
Typ.  
Max.  
gfS  
IC = 20A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
11  
18  
S
Cies  
Coes  
Cres  
2230  
92  
pF  
pF  
pF  
33  
Qg  
105  
13  
nC  
nC  
nC  
Qge  
Qgc  
IC = 20A, VGE = 15V, VCE = 1000V  
45  
Terminals: 1 - Gate  
2,4 - Collector  
3 - Emitter  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
64  
210  
300  
504  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 25°C  
IC = 20A, VGE = 15V  
VCE = 1250V, RG = 10Ω  
68  
540  
300  
395  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 125°C  
IC = 20A, VGE = 15V  
VCE = 1250V, RG = 10Ω  
RthJC  
RthCS  
0.50 °C/W  
°C/W  
(TO-247)  
0.21  
TO-247 Outline  
Reverse Diode  
∅ P  
Symbol Test Conditions  
Characteristic Values  
1
2
3
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
trr  
IF = 20A, VGE = 0V  
2.1  
V
μs  
A
1.35  
30  
IF = 10A, VGE = 0V, -diF/dt = 100A/μs  
VR = 100V, VGE = 0V  
IRM  
e
Terminals: 1 - Gate  
2 - Collector  
3 - Emitter  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Note  
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXBH20N300  
IXBT20N300  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
40  
35  
30  
25  
20  
15  
10  
5
300  
250  
200  
150  
100  
50  
VGE = 25V  
20V  
15V  
VGE = 25V  
20V  
15V  
10V  
10V  
5V  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
40  
35  
30  
25  
20  
15  
10  
5
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGE = 25V  
20V  
VGE = 15V  
15V  
I C = 40A  
I C = 20A  
10V  
I C = 10A  
5V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
TJ = 25ºC  
I C = 40A  
TJ = 125ºC  
25ºC  
20A  
10A  
- 40ºC  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
5
7
9
11  
13  
15  
VGE - Volts  
17  
19  
21  
23  
25  
VGE - Volts  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXBH20N300  
IXBT20N300  
Fig. 7. Transconductance  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
28  
24  
20  
16  
12  
8
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 25ºC  
TJ = 125ºC  
4
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
0
0.5  
1
1.5  
VF - Volts  
2
2.5  
3
IC - Amperes  
Fig. 10. Capacitance  
Fig. 9. Gate Charge  
16  
14  
12  
10  
8
10,000  
1,000  
100  
= 1 MHz  
f
VCE = 1kV  
I
I
C = 20A  
G = 10mA  
C
ies  
C
oes  
6
4
2
C
res  
0
10  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
QG - NanoCoulombs  
Fig. 11. Reverse-Bias Safe Operating Area  
Fig. 12. Maximum Transient Thermal Impedance  
140  
120  
100  
80  
1
0.1  
60  
40  
TJ = 125ºC  
G = 20Ω  
dv / dt < 10V / ns  
R
20  
0
0.01  
250  
500  
750 1000 1250 1500 1750 2000 2250 2500 2750 3000  
VCE - Volts  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXBH20N300  
IXBT20N300  
Fig. 14. Resistive Turn-on Rise Time vs.  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Collector Current  
700  
600  
500  
400  
300  
200  
100  
0
700  
600  
500  
400  
300  
200  
100  
0
RG = 10Ω , VGE = 15V  
RG = 10Ω , VGE = 15V  
CE = 1250V  
VCE = 1250V  
V
TJ = 125ºC  
I C = 20A  
I C = 40A  
TJ = 25ºC  
25  
10  
10  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
10  
25  
10  
15  
20  
25  
30  
35  
40  
TJ - Degrees Centigrade  
IC - Amperes  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
850  
800  
750  
700  
650  
600  
550  
500  
450  
200  
700  
600  
500  
400  
300  
200  
100  
350  
330  
310  
290  
270  
250  
230  
tf  
t
d(off) - - - -  
t r  
t
180  
160  
140  
120  
100  
80  
d(on) - - - -  
RG = 10Ω, VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 1250V  
VCE = 1250V  
I C = 20A  
I C = 20A, 40A  
I C = 40A  
60  
40  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
20  
30  
40  
50  
60  
70  
80  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off Switching Times vs.  
Collector Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
1200  
1000  
800  
600  
400  
200  
0
460  
420  
380  
340  
300  
260  
220  
600  
550  
500  
450  
400  
350  
300  
250  
200  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
tf  
td(off  
) - - - -  
t f  
t
d(off) - - - -  
TJ = 125ºC, VGE = 15V  
RG = 10Ω, VGE = 15V  
VCE = 1250V  
VCE = 1250V  
I C = 20A  
I C = 40A  
TJ = 125ºC, 25ºC  
30  
20  
30  
40  
50  
60  
70  
80  
15  
20  
25  
IC - Amperes  
35  
40  
RG - Ohms  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXYS REF: B_20N300(5P)03-10-09  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
厂商 型号 描述 页数 下载

IXYS

 		IXBA14N300HV [ Insulated Gate Bipolar Transistor ] 6 页

LITTELFUSE

 		IXBA16N170AHV [ Insulated Gate Bipolar Transistor, ] 3 页

IXYS

 		IXBA16N170AHV [ Insulated Gate Bipolar Transistor, ] 2 页

IXYS

 		IXBD4410 ISOSMART半桥驱动器芯片组[ ISOSMART Half Bridge Driver Chipset ] 11 页

IXYS

 		IXBD4410P ISOSMART半桥驱动器芯片组[ ISOSMART Half Bridge Driver Chipset ] 11 页

ETC

 		IXBD4410PC 接口IC\n[ Interface IC ] 16 页

IXYS

 		IXBD4410PI ISOSMART半桥驱动器芯片组[ ISOSMART Half Bridge Driver Chipset ] 11 页

IXYS

 		IXBD4410SI ISOSMART半桥驱动器芯片组[ ISOSMART Half Bridge Driver Chipset ] 11 页

IXYS

 		IXBD4411 ISOSMART半桥驱动器芯片组[ ISOSMART Half Bridge Driver Chipset ] 11 页

ETC

 		IXBD4411PC 接口IC\n[ Interface IC ] 16 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.580287s