IXTA05N100HV IXTA05N100
IXTP05N100
Symbol
Test Conditions
Characteristic Values
TO-263AA Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 500mA, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
0.55
0.93
S
Ciss
Coss
Crss
260
22
8
pF
pF
pF
td(on)
tr
td(off)
tf
11
19
40
28
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 1A
RG = 47 (External)
ns
PIN: 1 - Gate
2,4 - Source
3 - Drain
ns
Qg(on)
Qgs
7.8
1.4
4.1
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 1A
nC
nC
Qgd
RthJC
RthCS
3.1 C/W
C/W
(TO-220)
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
750 mA
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
3
A
V
1.5
TO-220AB Outline
IF = IS, -di/dt = 100A/s
710
ns
VR = 100V, VGS = 0V
Note 1: Pulse test, t 300s, duty cycle, d 2%.
TO-263 (HV) Outline
Pins: 1 - Gate
3 - Source
2 - Drain
PIN: 1 - Gate
2 - Source
3 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
