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IXFP4N85X

型号：

IXFP4N85X

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

248 K

下载PDF手册
Advance Technical Information  
X-Class HiPERFET  
Power MOSFET  
VDSS = 850V  
ID25 = 3.5A  
RDS(on) 2.5  
IXFY4N85X  
IXFA4N85X  
IXFP4N85X  
N-Channel Enhancement Mode  
TO-252 (IXFY)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D (Tab)  
TJ = 25C to 150C  
850  
850  
V
V
TO-263 (IXFA)  
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
S
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
3.5  
A
A
D (Tab)  
10.0  
TO-220 (IXFP)  
IA  
TC = 25C  
TC = 25C  
2
A
EAS  
125  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
V/ns  
W
G
D
S
150  
D (Tab)  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10.65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
Weight  
TO-252  
TO-263  
TO-220  
0.35  
2.50  
3.00  
g
g
g
Low Package Inductance  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
High Power Density  
Easy to Mount  
Space Savings  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
850  
V
3.0  
5.5  
V
Applications  
100 nA  
A  
IDSS  
5
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
TJ = 125C  
500 A  
RDS(on)  
VGS = 10V, ID = 2A, Note 1  
2.5   
Robotics and Servo Controls  
DS100768(12/16)  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXFY4N85X IXFA4N85X  
IXFP4N85X  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 2A, Note 1  
Gate Input Resistance  
1.2  
2.0  
S
RGi  
3
Ciss  
Coss  
Crss  
247  
305  
5
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
27  
60  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
td(on)  
tr  
td(off)  
tf  
13  
27  
28  
20  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 2A  
V
RG = 30(External)  
Qg(on)  
Qgs  
7.0  
2.3  
3.3  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 2A  
Qgd  
RthJC  
RthCS  
0.83 C/W  
C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
4
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
16  
1.4  
V
trr  
QRM  
IRM  
170  
770  
9
ns  
IF = 2A, -di/dt = 100A/μs  
nC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFY4N85X IXFA4N85X  
IXFP4N85X  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
6
5
4
3
2
1
0
V
= 10V  
V
= 10V  
GS  
GS  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
6V  
0
1
2
3
4
5
6
7
8
9
10  
11  
0
4
8
12  
16  
20  
24  
28  
32  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 2A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10V  
9V  
GS  
V
= 10V  
GS  
8V  
7V  
I
= 4A  
D
I
= 2A  
D
6V  
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 2A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10V  
GS  
T = 125ºC  
J
T = 25ºC  
J
0
1
2
3
4
5
6
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
ID - Amperes  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXFY4N85X IXFA4N85X  
IXFP4N85X  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
5
4
3
2
1
0
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
25ºC  
- 40ºC  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
10  
8
18  
16  
14  
12  
10  
8
V
= 425V  
DS  
I
I
= 2A  
D
G
= 10mA  
6
4
T
J
= 125ºC  
6
4
T = 25ºC  
J
2
2
0
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
0
1
2
3
4
5
6
7
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Output Capacitance Stored Energy  
Fig. 11. Capacitance  
10000  
1000  
100  
10  
10  
9
8
7
6
5
4
3
2
1
0
C
iss  
oss  
rss  
C
C
1
= 1 MHz  
f
0.1  
1
10  
100  
1000  
0
100  
200  
300  
400  
500  
600  
700  
800  
900  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFY4N85X IXFA4N85X  
IXFP4N85X  
Fig. 14. Maximum Transient Thermal Impedance  
Fig. 13. Forward-Bias Safe Operating Area  
1
100  
10  
R
DS(  
on  
Limit  
)
25µs  
100µs  
0.1  
1
0.1  
0.01  
1ms  
T
= 150ºC  
= 25ºC  
J
T
C
10ms  
Single Pulse  
DC  
0.01  
10  
100  
1,000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
TO-220 Outline  
A
E
oP  
A1  
TO-263 Outline  
A
C2  
E
E1  
4
H1  
Q
TO-252 AA Outline  
D2  
E1  
D
L1  
D1  
D
D1  
L2  
H
A1  
1
3
2
b
b2  
A2  
L3  
c
EJECTOR  
e
e
PIN  
0.43 [11.0]  
L1  
0  
L
0.34 [8.7]  
0.66 [16.6]  
A2  
e
c
3X b  
e1  
3X b2  
1 - Gate  
2,4 - Drain  
3 - Source  
0.20 [5.0]  
0.10 [2.5]  
0.12 [3.0]  
0.06 [1.6]  
1 - Gate  
2,4 - Drain  
3 - Source  
1 - Gate  
2,4 - Drain  
3 - Source  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_4N85X(S2-D901) 12-05-16  
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