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IXFK210N30X3

型号：

IXFK210N30X3

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

217 K

下载PDF手册
Advance Technical Information  
X3-Class HiPerFETTM  
Power MOSFET  
VDSS = 300V  
ID25 = 210A  
RDS(on) 5.5m  
IXFK210N30X3  
IXFX210N30X3  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXFK)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
300  
300  
V
V
G
D
VDGR  
TJ = 25C to 150C, RGS = 1M  
Tab  
S
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
PLUS247 (IXFX)  
ID25  
IL(RMS)  
IDM  
TC = 25C  
External Lead Current Limit  
TC = 25C, Pulse Width Limited by TJM  
210  
160  
650  
A
A
A
G
D
IA  
TC = 25C  
TC = 25C  
105  
3
A
J
Tab  
S
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
20  
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
1250  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in  
N/lb  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Low Package Inductance  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
High Power Density  
Easy to Mount  
Space Savings  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
300  
V
2.5  
4.5  
V
Applications  
200 nA  
IDSS  
25 A  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
TJ = 125C  
2.5 mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
4.3  
5.5 m  
Robotics and Servo Controls  
DS100864A(11/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXFK210N30X3  
IXFX210N30X3  
TO-264 Outline  
Symbol  
Test Conditions  
Characteristic Values  
A
E
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
Q
S
gfs  
VDS = 10V, ID = 60A, Note 1  
Gate Input Resistance  
84  
140  
S
R
D
Q1  
RGi  
2
R1  
1
2
3
L1  
Ciss  
Coss  
Crss  
24.2  
3.1  
nF  
nF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
L
7.7  
c
b
A1  
b1  
b2  
Effective Output Capacitance  
e
x2  
Co(er)  
Co(tr)  
1100  
4600  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
DS = 0.8 • VDSS  
0P  
4
V
Terminals:  
1
= Gate  
2,4 Drain  
= Source  
=
3
td(on)  
tr  
td(off)  
tf  
38  
40  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
210  
15  
RG = 1(External)  
Qg(on)  
Qgs  
375  
107  
100  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.10 C/W  
C/W  
0.15  
Source-Drain Diode  
PLUS 247TM Outline  
A
E1  
E
Q
A2  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
D2  
R
D
D1  
IS  
VGS = 0V  
210  
A
A
4
1
2
3
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
840  
1.4  
L1  
V
L
trr  
QRM  
IRM  
190  
1.4  
15  
ns  
IF = 105A, -di/dt = 100A/μs  
b
A1  
e
μC  
3 PLCS  
C
2 PLCS  
b2 2 PLCS  
VR = 100V  
b4  
A
Terminals: 1 - Gate  
2,4 - Drain  
3 - Source  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFK210N30X3  
IXFX210N30X3  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
220  
200  
180  
160  
140  
120  
100  
80  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
V
= 10V  
8V  
V
= 10V  
GS  
GS  
9V  
8V  
7V  
6V  
7V  
60  
6V  
5V  
40  
5V  
20  
0
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 105A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
220  
200  
180  
160  
140  
120  
100  
80  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
6V  
I
= 210A  
D
I
= 105A  
D
5V  
4V  
60  
40  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
2.2  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 105A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
BV  
DSS  
o
T
= 125 C  
J
o
T
J
= 25 C  
V
GS(th)  
100  
-60  
-40  
-20  
0
20  
40  
60  
80  
120  
140  
160  
100  
200  
300  
400  
500  
600  
700  
800  
900  
TJ - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXFK210N30X3  
IXFX210N30X3  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
280  
240  
200  
160  
120  
80  
180  
160  
140  
120  
100  
80  
V
= 10V  
DS  
External Lead Current Limit  
o
T
J
= 125 C  
o
60  
25 C  
o
40  
- 40 C  
40  
20  
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
280  
400  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
400  
350  
300  
250  
200  
150  
100  
50  
600  
500  
400  
300  
200  
100  
0
o
T = - 40 C  
J
V
= 10V  
DS  
o
25 C  
o
125 C  
o
T = 125 C  
J
o
T = 25 C  
J
0
0
40  
80  
120  
160  
200  
240  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
VSD - Volts  
ID - Amperes  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
100,000  
10,000  
1,000  
100  
10  
9
8
7
6
5
4
3
2
1
0
V
= 150V  
DS  
C
iss  
I
I
= 105A  
= 10mA  
D
G
C
oss  
C
rss  
10  
= 1 MHz  
f
1
0
50  
100  
150  
200  
250  
300  
350  
1
10  
100  
1,000  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
VDS - Volts  
IXFK210N30X3  
IXFX210N30X3  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
1000  
100  
10  
45  
40  
35  
30  
25  
20  
15  
10  
5
R
Limit  
)
DS(  
on  
25μs  
100μs  
External Lead  
Current Limit  
1ms  
1
o
10ms  
T = 150 C  
J
o
DC  
T
= 25 C  
C
Single Pulse  
0
0.1  
0
50  
100  
150  
200  
250  
300  
1
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaaa  
0.2  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_210N30X3 (29-S301) 11-08-17  
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