IXFH80N65X2
IXFK80N65X2
Symbol
Test Conditions
Characteristic Values
TO-247 Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
D
A
A2
A
0P
+
B
O 0K M D B M
E
+
A2
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Gate Input Resistance
33
55
S
Q
S
D2
+
R
RGi
0.6
D1
D
0P1
4
Ciss
Coss
Crss
8300
5010
1.6
pF
pF
pF
1
2
3
ixys option
C
L1
VGS = 0V, VDS = 25V, f = 1MHz
E1
L
Effective Output Capacitance
A1
b
b2
Co(er)
Co(tr)
280
pF
pF
c
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
b4
PINS: 1 - Gate
e
1160
+
O
2, 4 - Drain
3 - Source
J
M
C
A M
td(on)
tr
td(off)
tf
32
24
70
11
ns
ns
ns
ns
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
V
RG = 3 (External)
Qg(on)
Qgs
140
50
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
40
RthJC
0.14 C/W
RthCS
RthCS
0.21
0.15
C/W
C/W
Source-Drain Diode
TO-264P Outline
Symbol
Test Conditions
Characteristic Values
E1
A
E
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
Q
IS
VGS = 0V
80
A
A
R
Q1
D1
D
ISM
VSD
Repetitive, pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
320
1.4
R1
4
1
2
3
L1
V
D2
trr
QRM
IRM
200
1.7
16.7
ns
IF = 40A, -di/dt = 100A/μs
μC
VR = 100V
c
A
b1
b
A
b2
e
x2
Terminals:
1
= Gate
2,4 = Drain
= Source
3
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
