IXFA16N60P3 IXFP16N60P3
IXFH16N60P3
Symbol
Test Conditions
Characteristic Values
TO-220 Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
Gate Input Resistance
10
17
S
RGi
2.3
Ciss
Coss
Crss
1830
217
8.6
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
20
13
42
8
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
ns
RG = 5 (External)
Pins: 1 - Gate
ns
2 - Drain
3 - Source
Qg(on)
Qgs
36
9
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
13
RthJC
RthCS
0.36 C/W
TO-220
TO-247
0.50
0.21
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V, Note1
16
A
A
TO-247 Outline
ISM
VSD
Repetitive, pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
48
1.4
V
trr
QRM
IRM
250
C
ns
IF = 8A, -di/dt = 100A/μs
0.7
7.6
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
1 - Gate
2,4 - Drain
3 - Source
TO-263 Outline
1 = Gate
2 = Drain
3 = Source
4 = Drain
Bottom Side
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
