SOT223 PNP SILICON PLANAR
SWITCHING TRANSISTOR
FZT4403
ISSUE 4 JUNE 1996
✪
PARTMARKING DETAIL
FZT4403
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
-40
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
-40
V
Emitter-Base Voltage
-5
V
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
-600
mA
W
Ptot
1.5
Tj:Tstg
-55 to +150
°C
= 25°C).
amb
PARAMETER
SYMBOL MIN.
V(BR)CBO -40
V(BR)CEO -40
V(BR)EBO -5
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
V
V
IC=-0.1mA
IC=-1mA
Collector-Emitter
Breakdown Voltage
Emitter Base
Breakdown Voltage
IE=-0.1mA
Base Cut-off Current
IBEX
ICEX
-0.1
-0.1
VCE=-35V, VEB(OFF=) -0.4V
VCE=-35V, VEB(OFF=) -0.4V
µA
µA
Collector-Emitter
Cut-off Current
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.4
-0.75
V
V
IC=-150mA, IB=-15mA*
IC=-500mA, IB=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
hFE
-0.75
-0.95
-1.3
V
V
IC=-150mA, IB=-15mA*
IC=-500mA, IB=-50mA*
Static Forward
Current Transfer Ratio
30
60
IC=-0.1mA, VCE=-1V
IC=-1mA, VCE=-1V
100
100
20
IC=-10mA, VCE=-1V
IC=-150mA, VCE=-2V*
IC=-500mA, VCE=-2V*
300
Transition Frequency
Output Capacitance
Input Capacitance
fT
200
MHz
pF
IC=-50mA, VCE=-5V
f=100MHz
Cobo
Cibo
8.5
30
VCB=-10V, f=100KHz
IE=0
pF
IC=0, f=100kHZ
*Measured under pulsed conditions. Pulse width=300µs.
3 - 300
