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IXBT42N300HV

型号：

IXBT42N300HV

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

268 K

下载PDF手册
Preliminary Technical Information  
High Voltage, BiMOSFETTM  
Monolithic Bipolar MOS  
Transistor  
VCES = 3000V  
IC110 = 42A  
VCE(sat) 3.0V  
IXBT42N300HV  
IXBH42N300HV  
TO-268HV (IXBT)  
G
E
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
C (Tab)  
TC = 25°C to 150°C  
3000  
3000  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1M  
TO-247HV (IXBH)  
VGES  
VGEM  
Continuous  
Transient  
± 25  
± 35  
V
V
IC25  
IC110  
ICM  
TC = 25°C  
104  
42  
A
A
A
TC = 110°C  
TC = 25°C, 1ms  
G
E
400  
C (Tab)  
C
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 20  
ICM = 84  
1500  
A
V
Clamped Inductive Load  
G = Gate  
E = Emitter  
C
= Collector  
TSC  
(SCSOA)  
VGE = 15V, TJ = 125°C,  
RG = 82, VCE =1500V, Non-Repetitive  
10  
μs  
Tab = Collector  
PC  
TC = 25°C  
500  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
TJM  
Tstg  
High Voltage Package  
High Blocking Voltage  
-55 ... +150  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
High Peak Current Capability  
Low Saturation Voltage  
FBSOA  
Md  
Mounting Torque (TO-247HV)  
1.13/10  
Nm/lb.in  
SCSOA  
Weight  
TO-268HV  
TO-247HV  
4
6
g
g
Advantages  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Low Gate Drive Requirement  
High Power Density  
Min.  
3000  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 1mA, VGE = 0V  
IC = 1mA, VCE = VGE  
VCE = 0.8 • VCES, VGE = 0V  
V
V
5.0  
50 μA  
μA  
Applications  
TJ = 125°C  
TJ = 125°C  
250  
Laser Generators  
Capacitor Discharge Circuits  
AC Switches  
Protection Circuits  
IGES  
VCE = 0V, VGE = ± 25V  
±200 nA  
VCE(sat)  
IC = 42A, VGE = 15V, Note 1  
2.5  
3.1  
3.0  
V
V
© 2014 IXYS CORPORATION, All Rights Reserved  
DS100512A(12/14)  
IXBT42N300HV  
IXBH42N300HV  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-268HV Outline  
Min.  
Typ.  
Max.  
E
A
E1  
L2  
C2  
gfS  
IC = 42A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
Gate Input Resistance  
28  
45  
S
3
D1  
3
D
H
D2  
Cies  
Coes  
Cres  
4780  
170  
56  
pF  
pF  
pF  
1
2
D3  
2
1
A1  
L4  
C
e
e
b
RGi  
3.0  
PINS:  
1 - Gate 2 - Emitter  
3 - Collector  
Qg  
200  
28  
nC  
nC  
nC  
Qge  
Qgc  
IC = 42A, VGE = 15V, VCE = 1000V  
L3  
A2  
L
75  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
72  
330  
445  
610  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 25°C  
IC = 42A, VGE = 15V  
VCE = 1500V, RG = 20  
72  
580  
460  
490  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 125°C  
IC = 42A, VGE = 15V  
VCE = 1500V, RG = 20  
RthJC  
RthCS  
0.25 °C/W  
°C/W  
TO-247HV  
0.21  
TO-247HV Outline  
E1  
E
A
R
0P  
0P1  
A2  
Reverse Diode  
Q
S
D1  
D2  
D
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
4
Min.  
Typ.  
Max  
1
2
3
L1  
A3  
2X  
D3  
VF  
trr  
IF = 42A, VGE = 0V, Note 1  
IF = 21A, VGE = 0V, -diF/dt = 100A/μs  
VR = 100V, VGE = 0V  
2.5  
V
μs  
A
E2  
E3  
4X  
A1  
L
1.7  
43  
IRM  
e
b
b1  
c
e1  
3X  
3X  
PINS:  
1 - Gate 2 - Emitter  
3, 4 - Collector  
Note  
1. Pulse test, t < 300s, duty cycle, d < 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1  
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1  
4,835,592 4,931,844 5,049,961 5,237,481 6,162,665  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXBT42N300HV  
IXBH42N300HV  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
320  
280  
240  
200  
160  
120  
80  
V
= 25V  
GE  
V
= 25V  
20V  
GE  
20V  
15V  
15V  
10V  
10V  
40  
5V  
5V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
1
2
3
4
5
6
7
8
9
10  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 25V  
GE  
V
= 15V  
GE  
20V  
15V  
I
= 84A  
C
10V  
I
= 42A  
C
I
= 21A  
C
5V  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
T
J
= 25ºC  
T
J
= - 40ºC  
25ºC  
125ºC  
I C = 84A  
42A  
60  
40  
21A  
20  
0
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
9
9.5  
5
7
9
11  
13  
15  
17  
19  
21  
23  
25  
VGE - Volts  
VGE - Volts  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXBT42N300HV  
IXBH42N300HV  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
Fig. 7. Transconductance  
140  
120  
100  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= - 40ºC  
T
J
= 25ºC  
25ºC  
T
J
= 125ºC  
125ºC  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
VF - Volts  
IC - Amperes  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
16  
14  
12  
10  
8
10,000  
1,000  
100  
V
I
= 1000V  
CE  
= 42A  
C
C
ies  
I
= 10mA  
G
C
oes  
6
4
C
res  
2
= 1 MHz  
5
f
0
10  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Reverse-Bias Safe Operating Area  
1
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
0.1  
0.01  
T
= 125ºC  
J
R
= 20Ω  
G
dv / dt < 10V / ns  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
250  
500  
750 1000 1250 1500 1750 2000 2250 2500 2750 3000  
VCE - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXBT42N300HV  
IXBH42N300HV  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time vs.  
Collector Current  
650  
600  
550  
500  
450  
400  
350  
300  
250  
650  
600  
550  
500  
450  
400  
350  
300  
250  
R
= 20Ω , V = 15V  
GE  
G
V
= 1500V  
CE  
T
J
= 125ºC  
R
= 20Ω , V = 15V  
GE  
G
V
= 1500V  
CE  
I
= 84A  
C
I
= 42A  
C
T
J
= 25ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
40  
45  
50  
55  
60  
65  
70  
75  
80  
85  
TJ - Degrees Centigrade  
IC - Amperes  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
800  
700  
600  
500  
400  
300  
200  
500  
480  
460  
440  
420  
400  
380  
1800  
1600  
1400  
1200  
1000  
800  
360  
t f  
t
d(off) - - - -  
t r  
t
d(on) - - - -  
320  
280  
240  
200  
160  
120  
80  
R
G
= 20Ω, V = 15V  
GE  
T
J
= 125ºC, V = 15V  
GE  
V
= 1500V  
CE  
V
= 1500V  
CE  
I
= 84A  
C
I
= 42A  
C
I
= 42A  
C
600  
I
= 84A  
75  
C
400  
200  
40  
25  
35  
45  
55  
65  
85  
95  
105  
115  
125  
20  
40  
60  
80  
100  
120  
140  
160  
180  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off Switching Times vs.  
Collector Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
3600  
3200  
2800  
2400  
2000  
1600  
1200  
800  
800  
700  
600  
500  
400  
300  
200  
500  
t f  
t
t f  
t d(off  
) - - - -  
d(off) - - - -  
480  
460  
440  
420  
400  
380  
R
G
= 20Ω, V = 15V  
T = 125ºC, V = 15V  
J GE  
GE  
V
= 1500V  
V
= 1500V  
CE  
CE  
I
= 42A  
C
T
J
= 25ºC  
T
J
= 125ºC  
I
= 84A  
C
400  
0
40  
45  
50  
55  
60  
65  
70  
75  
80  
85  
20  
40  
60  
80  
100  
120  
140  
160  
180  
RG - Ohms  
IC - Amperes  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXBT42N300HV  
IXBH42N300HV  
Fig. 20. Forward-Bias Safe Operating Area @ TC = 115ºC  
Fig. 19. Forward-Bias Safe Operating Area @ TC = 25ºC  
1000  
100  
10  
1000  
100  
10  
V Limit  
CE(sat)  
V
Limit  
CE(sat)  
25µs  
100µs  
25µs  
100µs  
1
1
1ms  
1ms  
10ms  
0.1  
0.1  
100ms  
10ms  
DC  
T = 150ºC  
T = 150ºC  
J
J
100ms  
0.01  
0.001  
0.01  
0.001  
T
= 25ºC  
T
= 115ºC  
C
C
DC  
Single Pulse  
Single Pulse  
1
10  
100  
1000  
10000  
1
10  
100  
1000  
10000  
VCE - Volts  
VCE - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS REF: B_42N300(8M)11-09-12-A  
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