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IXFQ30N50P

型号：

IXFQ30N50P

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

252 K

下载PDF手册
Advance Technical Information  
PolarHVTM Power  
HiPerFET MOSFET  
VDSS = 500 V  
IXFH 30N50P  
IXFT 30N50P  
IXFQ 30N50P  
IXFV 30N50P  
IXFV 30N50PS  
ID25 = 30 A  
RDS(on) = 200 mΩ  
trr < 200 ns  
N-ChannelEnhancement  
ModeAvalancheRated  
Fast Intrinsic Diode  
TO-3P(IXFQ)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 175°C  
500  
500  
V
G
TJ = 25°C to 175°C; RGS = 1 MΩ  
V
D
(TAB)  
S
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
TO-247 AD (IXFH)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
30  
75  
A
A
(TAB)  
IAR  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
TC = 25°C  
30  
40  
1.2  
A
mJ  
J
TO-268 (IXFT)  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 5 Ω  
,
10  
V/ns  
G
TC = 25°C  
460  
W
S
D (TAB)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
PLUS220(IXFV)  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Maximum tab temperature for soldering  
for 10s  
300  
260  
°C  
°C  
Md  
Mounting torque (TO-247, TO-3P)  
1.13/10 Nm/lb.in.  
G
D (TAB)  
D
S
Weight  
TO-247  
TO-268  
PLUS220, PLUS220SMD  
TO-3P  
6
g
g
g
g
5
PLUS220 SMD(IXFV..S)  
4
5.5  
Symbol  
TestConditions  
Characteristic Values  
G
S
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.  
D (TAB)  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = 30 VDC, VDS = 0  
500  
3.0  
V
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
5.0  
V
100 nA  
Features  
z International standard packages  
z Unclamped Inductive Switching (UIS)  
rated  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
TJ = 125°C  
z Low package inductance  
- easy to drive and to protect  
RDS(on)  
VGS = 10 V, ID = 0.5 I  
165  
200 mΩ  
Pulse test, t ≤ 300 µDs2,5duty cycle d ≤ 2 %  
DS99414(06/05)  
© 2005 IXYS All rights reserved  
IXFH 30N50P IXFQ 30N50P IXFT 30N50P  
IXFV 30N50P IXFV 30N50PS  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 20 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
17  
27  
S
Ciss  
Coss  
Crss  
4150  
445  
28  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
25  
27  
75  
21  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25  
RG = 5 Ω (External)  
Qg(on)  
Qgs  
70  
27  
22  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
(TO-247, PLUS220, TO-3P)  
Qgd  
RthJC  
RthCK  
0.23 K/W  
K/W  
0.21  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
TestConditions  
Min.  
typ.  
Max.  
VGS = 0 V  
30  
A
A
V
ISM  
Repetitive  
90  
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
IF = 25 A; -di/dt = 100 A/µs  
150  
6
250 ns  
IRM  
QRM  
VR = 100 V; VGS = 0 V  
A
0.6  
µC  
CharacteristicCurves  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
@ 25  
º
C
ºC  
30  
27  
24  
21  
18  
15  
12  
9
70  
60  
50  
40  
30  
20  
10  
0
V
GS  
= 10V  
V
= 10V  
8V  
GS  
8V  
7V  
6V  
7V  
6
6V  
3
0
0
1
2
3
4
5
6
7
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by 4,835,592  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
oneormoreofthefollowingU.S.patents:  
4,850,072  
4,881,106  
IXFH 30N50P IXFQ 30N50P IXFT 30N50P  
IXFV 30N50P IXFV 30N50PS  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Normalized to 0.5 ID25  
)
º
C
Value vs. Junction Temperature  
30  
27  
24  
21  
18  
15  
12  
9
3.4  
V
GS  
= 10V  
8V  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
= 10V  
GS  
7V  
6V  
I
= 30A  
D
I
= 15A  
D
6
5V  
3
0.7  
0.4  
0
0
2
4
6
8
10  
12  
14  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
35  
30  
25  
20  
15  
10  
5
V
= 10V  
GS  
∫
T = 125 C  
J
T = 25  
J
∫
C
0.7  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
∫
T = -40 C  
J
25 C  
∫
∫
125 C  
∫
T = 125 C  
J
25 C  
∫
∫
-40 C  
0
0
3.5  
4
4.5  
5
5.5  
6
6.5  
7
7.5  
0
5
10 15 20 25 30 35 40 45 50 55  
VG S - Volts  
I D - Amperes  
© 2005 IXYS All rights reserved  
IXFH 30N50P IXFQ 30N50P IXFT 30N50P  
IXFV 30N50P IXFV 30N50PS  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
10  
9
V
I
= 250V  
DS  
8
7
6
5
4
3
2
1
0
= 15A  
D
I
= 10mA  
G
T = 125 C  
∫
J
∫
T = 25 C  
J
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
0
10  
20  
30  
40  
50  
60  
70  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Forward-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
10000  
1000  
100  
100  
10  
1
R
Limit  
DS(on)  
C
iss  
25µs  
100µs  
C
C
oss  
rs  
1ms  
10ms  
DC  
T = 150∫C  
J
f = 1MHz  
T = 25∫C  
C
10  
0
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
1000  
VD S - Volts  
VD S - Volts  
Fig. 13. Maxim um Transient Therm al Resistance  
1.00  
0.10  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by 4,835,592  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
oneormoreofthefollowingU.S.patents:  
4,850,072  
4,881,106  
IXFH 30N50P IXFQ 30N50P IXFT 30N50P  
IXFV 30N50P IXFV 30N50PS  
Package Outline Drawings  
TO-247 AD (IXFH) Outline  
TO-3P (IXTQ) Outline  
TO-268 (IXTT) Outline  
1
2
3
Terminals:  
1 - Gate  
2 - Drain  
3 - Source  
Tab - Drain  
Dim.  
Millimeter  
Inches  
Min.  
Min.  
Max.  
Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185  
.087  
.059  
.209  
.102  
.098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040  
.065  
.113  
.055  
.084  
.123  
C
D
E
.4  
20.80  
15.75  
.8  
21.46  
16.26  
.016  
.819  
.610  
.031  
.845  
.640  
e
L
L1  
5.20  
19.81  
5.72  
20.32  
4.50  
0.205  
.780  
0.225  
.800  
.177  
∅P  
Q
3.55  
5.89  
3.65  
6.40  
.140  
0.232  
.144  
0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170  
242 BSC  
.216  
A
A1  
E
E1  
PLUS220 (IXFV) Outline  
E1  
L2  
E
E1  
A
A1  
E1  
L2  
D
D1  
A3  
D
L3  
L3  
L4  
L
L1  
L1  
2X b  
c
A2  
e
L
Terminals: 1-Gate 2-Drain  
c
3X b  
A2  
2X e  
Terminals: 1-Gate 2-Drain  
A
A2  
A3  
b
c
D
A
A1  
A2  
b
c
E
D
D1  
E
e
L
e
L
L2  
© 2005 IXYS All rights reserved  
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