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IXYT55N120A4HV

型号：

IXYT55N120A4HV

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

8 页

PDF大小：

1575 K

下载PDF手册
1200V XPTTM  
GenX4TM IGBT  
VCES = 1200V  
IC110 = 55A  
VCE(sat)  1.8V  
tfi(typ) = 270ns  
IXYT55N120A4HV  
IXYH55N120A4  
Ultra Low-Vsat PT IGBT for  
up to 5kHz Switching  
TO-268HV  
(IXYT..HV)  
G
E
C (Tab)  
TO-247  
(IXYH)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
1200  
1200  
V
TJ = 25°C to 175°C, RGE = 1M  
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
C (Tab)  
IC25  
IC110  
TC = 25°C  
TC = 110°C  
175  
55  
A
A
G = Gate  
D
= Collector  
S = Emitter  
Tab = Collector  
ICM  
TC = 25°C, 1ms  
350  
A
SSOA  
VGE = 15V, TVJ = 125°C, RG = 5  
ICM = 110  
A
(RBSOA)  
Clamped Inductive Load  
VCE 0.8 • VCES  
PC  
TC = 25°C  
650  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
Optimized for Low Conduction Losses  
Positive Thermal Coefficient of  
Vce(sat)  
-55 ... +175  
International Standard Packages  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in  
Weight  
TO-268HV  
TO-247  
4
6
g
g
High Power Density  
Low Gate Drive Requirement  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1200  
4.0  
Typ.  
Max.  
Power Inverters  
UPS  
Motor Drives  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.5  
5
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
A  
TJ = 150C  
TJ = 150C  
2.5 mA  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
Inrush Current Protector Circuits  
VCE(sat)  
IC = 55A, VGE = 15V, Note 1  
1.5  
1.8  
1.8  
V
V
©2020 IXYS CORPORATION, All Rights Reserved  
DS100983B(2/20)  
IXYT55N120A4HV  
IXYH55N120A4  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 55A, VCE = 10V, Note 1  
22  
36  
S
Cies  
Coes  
Cres  
2150  
125  
80  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg(on)  
Qge  
Qgc  
110  
17  
nC  
nC  
nC  
IC = 55A, VGE = 15V, VCE = 0.5 • VCES  
56  
td(on)  
tri  
Eon  
td(off)  
tfi  
23  
35  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 40A, VGE = 15V  
2.3  
300  
270  
5.3  
mJ  
ns  
VCE = 0.5 • VCES, RG = 5  
ns  
Note 2  
Eoff  
mJ  
td(on)  
tri  
Eon  
td(off)  
tfi  
21  
33  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 40A, VGE = 15V  
3.8  
380  
530  
8.8  
mJ  
ns  
VCE = 0.5 • VCES, RG = 5  
ns  
Note 2  
Eoff  
mJ  
RthJC  
RthCS  
0.23 °C/W  
TO-247  
0.21  
C/W  
Notes:  
1. Pulse test, t 300µs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYT55N120A4HV  
IXYH55N120A4  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
V
= 15V  
GE  
300  
250  
200  
150  
100  
50  
100  
80  
60  
40  
20  
0
13V  
12V  
11V  
10V  
V
= 15V  
GE  
14V  
13V  
12V  
11V  
9V  
8V  
10V  
9V  
8V  
7V  
6V  
7V  
6V  
0
0
0
7
0.5  
1
1.5  
2
2.5  
3
0
-50  
4
5
10  
15  
20  
25  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150oC  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GE  
100  
80  
60  
40  
20  
0
V
= 15V  
11V  
10V  
GE  
13V  
12V  
I
= 110A  
C
9V  
8V  
I
= 55A  
C
7V  
6V  
I
= 27.5A  
125  
C
0.5  
1
1.5  
2
2.5  
3
3.5  
-25  
0
25  
50  
75  
100  
150  
175  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
= 25oC  
100  
80  
60  
40  
20  
0
T
J
I
= 110A  
C
T
= 150oC  
25oC  
J
55A  
- 40oC  
27.5A  
8
9
10  
11  
12  
13  
14  
15  
5
6
7
8
9
10  
VGE - Volts  
VGE - Volts  
©2020 IXYS CORPORATION, All Rights Reserved  
IXYT55N120A4HV  
IXYH55N120A4  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
16  
14  
12  
10  
8
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T
J
= - 40oC  
VCE = 600V  
IC = 55A  
IG = 10mA  
25oC  
150oC  
6
4
2
0
0
0
20  
40  
60  
80  
100  
120  
0
20  
40  
60  
80  
100  
120  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
10,000  
1,000  
100  
120  
100  
80  
60  
40  
20  
0
C
ies  
C
C
oes  
res  
T
J
= 125oC  
R
G
= 5  
Ω
= 1 MHz  
f
dv / dt < 10V / ns  
10  
0
5
10  
15  
20  
25  
30  
35  
200  
500  
600  
700  
800  
900  
1000 1100 1200  
40 300 400
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
aaa  
0.4  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYT55N120A4HV  
IXYH55N120A4  
Fig. 13. Inductive Switching Energy Loss vs.  
Fig. 12. Inductive Switching Energy Loss vs.  
Collector Current  
Collector-Emitter Voltage  
16  
14  
12  
10  
8
8
7
6
5
4
3
2
1
20  
18  
16  
14  
12  
10  
8
10  
9
8
7
6
5
4
3
2
1
0
E
E
E
R
E
off  
on  
off  
on  
R
= 5 ,V  
Ω
GE  
= 15V  
= 5 ,  
V
= 15V  
GE  
G
Ω
G
V
= 600V  
I
= 40A  
CE  
C
= 150oC  
T
J
= 150oC  
T
J
6
T
J
= 25oC  
6
T
J
= 25oC  
4
4
2
0
2
20  
30  
40  
50  
60  
70  
80  
400  
500  
600  
700  
800  
900  
1000  
IC - Amperes  
VCE - Volts  
Fig. 15. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 14. Inductive Switching Energy Loss vs.  
Gate Resistance  
16  
14  
18  
16  
14  
12  
10  
8
14  
12  
10  
8
E
E
E
E
on  
off  
on  
off  
14  
12  
10  
8
12  
10  
8
T
J
= 150oC , V = 15V  
R
G
= 5 ,V  
Ω
GE  
= 15V  
GE  
I
= 80A  
V
CE  
= 600V  
V
= 600V  
C
CE  
I
= 80A  
C
6
6
6
4
IC = 40A  
4
4
2
I
= 40A  
16  
C
6
2
2
0
4
6
8
10  
12  
14  
18  
20  
25  
50  
75  
100  
125  
150  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 17. Inductive Turn-off Switching Times vs.  
Collector Current  
640  
620  
600  
580  
560  
540  
520  
500  
480  
600  
1000  
800  
600  
400  
200  
0
600  
t f i  
td(off)  
t f i  
td(off)  
550  
500  
450  
400  
350  
300  
250  
200  
T
J
= 150oC, V = 15V  
RG = 5 ,VGE = 15V  
GE  
Ω
500  
400  
300  
200  
100  
I
= 40A  
C
V
= 600V  
VCE = 600V  
CE  
I
= 80A  
C
T
J
= 150oC  
I
= 40A  
C
T
J
= 25oC  
20  
30  
40  
50  
60  
70  
80  
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
IC - Amperes  
©2020 IXYS CORPORATION, All Rights Reserved  
IXYT55N120A4HV  
IXYH55N120A4  
Fig. 18. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 19. Inductive Turn-on Switching Times vs.  
Gate Resistance  
700  
600  
500  
400  
300  
200  
100  
450  
400  
350  
300  
250  
200  
150  
200  
160  
120  
80  
60  
50  
40  
30  
20  
10  
t f i  
td(off)  
t r i  
td(on)  
T
= 150oC, V = 15V  
R
G
= 5 , V = 15V  
Ω
GE  
J
GE  
V
= 600V  
CE  
V
CE  
= 600V  
I
= 80A  
C
I
= 40A  
C
I
= 40A  
C
I
= 80A  
C
40  
0
25  
50  
75  
100  
125  
150  
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 21. Inductive Turn-on Switching Times vs.  
Junction Temperature  
Fig. 20. Inductive Turn-on Switching Times vs.  
Collector Current  
130  
45  
40  
35  
30  
25  
20  
15  
100  
80  
60  
40  
20  
0
36  
32  
28  
24  
20  
16  
t r i  
td(on)  
t r i  
td(on)  
110  
90  
70  
50  
30  
10  
R = 5 , V = 15V  
Ω
G GE  
R
G
= 5 , V = 15V  
Ω
GE  
V
= 600V  
CE  
V
= 600V  
CE  
I
= 80A  
C
T
= 25oC  
J
T
J
= 150oC  
I
= 40A  
C
25  
50  
75  
100  
125  
150  
20  
30  
40  
50  
60  
70  
80  
TJ - Degrees Centigrade  
IC - Amperes  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXY_55N120A4 (Y17-RY90) 8-01-19  
IXYT55N120A4HV  
IXYH55N120A4  
TO-268HV Outline  
PINS:  
1 - Gate  
2 - Emitter  
3 - Collector  
TO-247 Outline  
1 - Gate  
2,4 - Collector  
3 - Emitter  
©2020 IXYS CORPORATION, All Rights Reserved  
IXYT55N120A4HV  
IXYH55N120A4  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
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