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UZDM4306NTA

型号:

UZDM4306NTA

品牌:

ZETEX[ ZETEX SEMICONDUCTORS ]

页数:

3 页

PDF大小:

57 K

SM-8 DUAL N-CHANNEL ENHANCEMENT  
ZDM4306N  
MODE MOSFETS  
ISSUE 1 - NOVEMBER 1995  
D1  
D1  
D2  
D2  
G1  
S1  
G2  
S2  
SM-8  
(8 LEAD SOT223)  
PARTMARKING DETAIL – M4306N  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VDS  
VALUE  
UNIT  
V
Drain-Source Voltage  
60  
Continuous Drain Current at Tam b=25°C  
Pulsed Drain Current  
ID  
2
15  
A
IDM  
A
Gate-Source Voltage  
VGS  
V
± 20  
Operating and Storage Tem perature Range  
Tj:Tstg  
-55 to +150  
°C  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
Ptot  
VALUE  
UNIT  
Total Power Dissipation at Tam b = 25°C*  
Any single die on”  
Both die on” equally  
2.5  
3.0  
W
W
Derate above 25°C*  
Any single die on”  
Both die on” equally  
20  
24  
m W/ °C  
m W/ °C  
Therm al Resistance - J unction to Am bient*  
Any single die on”  
Both die on” equally  
50.0  
41.6  
°C/ W  
°C/ W  
* The power which can be dissipated assum ing the device is m ounted in a typical m anner on a PCB  
with copper equal to 2 inches square.  
Note:  
This data is derived from developm ent m aterial and does not necessarily m ean that the device will  
go into production  
3 - 321  
ZDM4306N  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherw ise stated).  
am b  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT CONDITIONS.  
Drain-Source  
Breakdown Voltage  
BVDSS  
VGS(th)  
IGSS  
60  
V
ID=1m A, VGS=0V  
ID=1m A, VDS= VGS  
Gate-Source Threshold  
Voltage  
1.3  
3
V
Gate-Body Leakage  
100  
nA  
VGS=± 20V, VDS=0V  
Zero Gate Voltage Drain IDSS  
Current  
10  
100  
VDS=60V, VGS=0  
DS=48V, VGS=0V, T=125°C(2)  
µA  
µA  
V
On-State Drain  
Current(1)  
ID(on)  
RDS(on)  
gfs  
12  
A
VDS=10V, VGS=10V  
Static Drain-Source  
On-State Resistance (1)  
0.22  
0.32  
0.33  
0.45  
VGS=10V,ID=3A  
VGS=5V, ID=1.5A  
Forward  
700  
m S  
VDS=25V,ID=3A  
Transconductance (1)(2)  
Input Capacitance (2)  
Ciss  
350  
140  
pF  
pF  
Com m on Source Output Coss  
Capacitance (2)  
VDS=25 V, VGS=0V, f=1MHz  
Reverse Transfer  
Capacitance (2)  
Crss  
30  
8
pF  
ns  
Turn-On Delay Tim e  
(2)(3)  
td(on)  
VDD25V, VGEN=10V, ID=3A  
Rise Tim e (2)(3)  
tr  
25  
30  
ns  
ns  
Turn-Off Delay Tim e  
(2)(3)  
td(off)  
Fall Tim e (2)(3)  
tf  
16  
ns  
1) Measured under pulsed conditions. Width=300µs. Duty cycle 2%  
(2) Sam ple test.  
(3) Switching tim es m easured with 50source im pedance and <5ns rise tim e on a pulse generator  
3 - 322  
ZDM4306N  
TYPICAL CHARACTERISTICS  
VGS=  
20V  
10V  
12V  
9V  
8V  
VGS=3V  
3.5V  
6V  
5V  
12  
11  
10  
10  
7V  
9
8
7
6
5
6V  
5V  
1.0  
8V  
4
3
2
1
10V  
4V  
3.5V  
3V  
0
0.1  
0.1  
0
1
2
3
4
5
6
7
8
9
10  
100  
1
10  
VDS - Drain Source Voltage (Volts)  
ID-Drain Current (Am ps)  
Saturation Characteristics  
On-resistance v drain current  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
5
VGS=10V  
ID=3A  
4
3
e
R
c
n
ta  
s
esi  
e R  
VDS=10V  
rc  
1.4  
1.2  
1.0  
0.8  
0.6  
u
2
1
o
S
-
n
VGS=VDS  
ID=1mA  
Drai  
Gate Threshold Voltage VGS(TH)  
0
-50  
150  
175 200 225  
100  
-25  
0
25 50 75  
125  
0
2
6
8
10 12  
16 18 20  
4
14  
ID(on)- Drain Current (Amps)  
Tj-Junction Temperature (°C)  
Transconductance v drain current  
Normalised RDS(on) and VGS(th) v Temperature  
VDD=  
16  
20V  
40V  
60V  
500  
400  
300  
14  
ID=3A  
12  
10  
8
Ciss  
200  
6
4
2
0
100  
Coss  
Crss  
0
0
10  
20  
30 40  
50  
60  
70  
80  
0
1
2
3
4
5
6
7
8
9
10 11 12  
VDS-Drain Source Voltage (Volts)  
Q-Charge (nC)  
Capacitance v drain-source voltage  
Gate charge v gate-source voltage  
3 - 323  
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