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IXFL210N30P3

型号：

IXFL210N30P3

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

151 K

下载PDF手册
Preliminary Technical Information  
Polar3TM HiPerFETTM  
Power MOSFET  
VDSS = 300V  
ID25 = 108A  
RDS(on) 16m  
IXFL210N30P3  
(Electrically Isolated Tab)  
trr  
250ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
ISOPLUS264  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
300  
300  
V
V
G
D
S
VDGR  
Isolated Tab  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G = Gate  
D
= Drain  
S = Source  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
108  
550  
A
A
IA  
EAS  
TC = 25C  
TC = 25C  
105  
4
A
J
Features  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
35  
V/ns  
W
Silicon Chip on Direct-Copper-Bond  
Substrate  
520  
- High Power Dissipation  
- Isolated Mounting Surface  
- 2500V~ Electrical Isolation  
Dynamic dv/dt Rating  
Avalanche Rated  
Fast Intrinsic Rectifier  
Low RDS(on)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Low Drain-to-Tab Capacitance  
Low Package Inductance  
FC  
Mounting Force  
40..120 / 9..27  
N/lb  
VISOL  
50/60 Hz, RMS t = 1 min  
2500  
3000  
V~  
V~  
IISOL 1 mA  
t = 1 s  
Advantages  
Weight  
8
g
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25C Unless Otherwise Specified)  
Min.  
300  
2.5  
Typ.  
Max.  
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
Power Supplies  
Uninterrupted Power Supplies  
AC Motor Drives  
High Speed Power Switching  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
5.0  
200 nA  
IDSS  
50 A  
1.5 mA  
Note 2, TJ = 125C  
RDS(on)  
VGS = 10V, ID = 105A, Note 1  
16 m  
DS100464A(12/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXFL210N30P3  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS264 (IXFL) OUTLINE  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
60  
100  
S
Ciss  
Coss  
Crss  
16.2  
2550  
42  
nF  
pF  
pF  
RGi  
1.0  
46  
td(on)  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS  
RG = 1(External)  
tr  
25  
94  
ns  
ns  
td(off)  
1
= Gate  
2,4 = Drain  
= Source  
tf  
13  
ns  
3
Qg(on)  
Qgs  
268  
80  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS  
Qgd  
72  
RthJC  
RthCS  
0.24C/W  
C/W  
0.15  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
210  
840  
1.5  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
trr  
QRM  
IRM  
250 ns  
C  
IF = 105A, -di/dt = 100A/s  
4.1  
28  
VR = 100V, VGS = 0V  
A
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Part must be heatsunk for high-temp IDSS measurement.  
PRELIMANARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFL210N30P3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
V
= 10V  
8V  
GS  
300  
250  
200  
150  
100  
50  
V
= 10V  
8V  
200  
160  
120  
80  
GS  
7V  
7V  
6V  
5V  
6V  
5V  
40  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
5
10  
15  
20  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 105A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
GS  
V
= 10V  
200  
160  
120  
80  
GS  
8V  
7V  
I
= 210A  
D
6V  
I
= 105A  
D
5V  
4V  
40  
0
0
1
2
3
4
5
6
7
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 105A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
120  
100  
80  
60  
40  
20  
0
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
V
= 10V  
GS  
T
J
= 125ºC  
T
J
= 25ºC  
0
50  
100  
150  
200  
250  
300  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXFL210N30P3  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
200  
160  
120  
80  
T
J
= - 40ºC  
25ºC  
125ºC  
T
= 125ºC  
J
25ºC  
60  
- 40ºC  
40  
40  
20  
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
1.3  
40  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
250  
200  
150  
100  
50  
V
= 150V  
DS  
I
I
= 105A  
D
G
= 10mA  
T
J
= 125ºC  
T
J
= 25ºC  
1.0  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.1  
1.2  
0
30  
60  
90  
120  
150  
180  
210  
240  
270  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
1000  
100  
10  
= 1 MHz  
f
R
Limit  
DS(on)  
C
iss  
25µs  
100µs  
C
oss  
1ms  
1
T
J
= 150ºC  
= 25ºC  
10ms  
T
C
Single Pulse  
C
100ms  
rss  
DC  
0.1  
10  
1
10  
100  
1,000  
0
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFL210N30P3  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_210N30P3(K9) 6-22-12  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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