IXBH42N170
IXBT42N170
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
TO-247 (IXBH) Outline
(TJ = 25°C unless otherwise specified)
gfS
IC = 42A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
24
32
S
Cies
Coes
Cres
3990
225
70
pF
pF
pF
∅ P
1
2
3
Qg
188
29
nC
nC
nC
Qge
Qgc
IC = 42A, VGE = 15V, VCE = 0.5 • VCES
76
e
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
37
139
340
665
ns
ns
ns
ns
Terminals: 1 - Gate
2 - Drain
Tab - Drain
Resistive Switching times, TJ = 25°C
3 - Source
IC = 42A, VGE = 15V
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
VCE = 850V, RG = 10Ω
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
36
188
330
740
ns
ns
ns
ns
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
Resistive Switching times, TJ = 125°C
IC = 42A, VGE = 15V
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
VCE = 850V, RG = 10Ω
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
RthJC
RthCS
0.35 °C/W
°C/W
.780 .800
.177
(TO-247)
0.25
∅P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
TO-268 (IXBT) Outline
Reverse Diode
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
VF
IF = 42A, VGE = 0V
2.8
V
IF = 21A, VGE = 0V, -diF/dt = 100A/μs
trr
1.32
36
μs
VR = 100V
IRM
A
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
