PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 APRIL 94
ZTX576
FEATURES
*
*
*
200 Volt VCEO
1 Amp continuous current
Ptot= 1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-200
Collector-Emitter Voltage
Emitter-Base Voltage
-200
V
-5
V
Peak Pulse Current
-2
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
-1
1
A
Ptot
W
°C
Tj:Tstg
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
V(BR)CBO -200
TYP.
MAX. UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-160V
Collector-Emitter
Breakdown Voltage
V(BR)CEO -200
V(BR)EBO -5
ICBO
V
V
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
-0.1
µA
Emitter Cut-Off Current IEBO
-0.1
-0.3
VEB=-4V
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
VBE(on)
V
IC=-100mA, IB=-10mA*
IC=-100mA, IB=-10mA*
IC=-100mA, VCE=-10V*
Base-Emitter
Saturation Voltage
-1
-1
V
V
Base-Emitter
Turn-on Voltage
Static Forward Current hFE
Transfer Ratio
50
50
IC=-10mA, VCE=-10V*
IC=-300mA, VCE=-10V*
300
Transition
Frequency
fT
100
MHz
IC=-50mA, VCE=-10V
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3-204
