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IXFH76N15T2

型号：

IXFH76N15T2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

253 K

下载PDF手册
TrenchT2TM HiperFETTM  
Power MOSFET  
VDSS = 150V  
ID25 = 76A  
RDS(on) 22m  
IXFA76N15T2  
IXFP76N15T2  
IXFH76N15T2  
TO-263 AA (IXFA)  
N-Channel Enhancement Mode  
Avalanche Rated  
G
S
Fast Intrnsic Rectifier  
D (Tab)  
TO-220AB (IXFP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 175C  
150  
150  
V
V
VDGR  
TJ = 25C to 175C, RGS = 1M  
G
D
D (Tab)  
S
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
TO-247 (IXFH)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
76  
A
A
200  
IA  
TC = 25C  
TC = 25C  
38  
A
G
D
S
D (Tab)  
EAS  
500  
mJ  
dv/dt  
PD  
IS IDM,, VDD VDSS,TJ 175C  
TC = 25C  
15  
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
350  
TJ  
-55 ... +175  
175  
C  
C  
C  
Features  
TJM  
Tstg  
-55 ... +175  
International Standard Packages  
175°C Operating Temperature  
High Current Handling Capability  
Fast Intrinsic Rectifier  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220 & TO-247)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Dynamic dv/dt Rated  
Nm/lb.in  
Low RDS(on)  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min. Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
150  
2.5  
V
4.5  
            200 nA  
A  
V
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
Power Supplies  
IDSS  
5
TJ = 150C  
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2  
750  A  
22 m  
DC Choppers  
AC Motor Drives  
RDS(on)  
Uninterruptible Power Supplies  
High Speed Power Switching  
Applications  
DS100176B(6/15)  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXFA76N15T2 IXFP76N15T2  
IXFH76N15T2  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25C, Unless Otherwise Specified)  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
50  
80  
S
Ciss  
Coss  
Crss  
5800  
490  
85  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
17  
19  
25  
14  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 5(External)  
Qg(on)  
Qgs  
97  
29  
30  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.43 C/W  
TO-220  
TO-247  
0.50  
0.21  
C/W  
C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
76  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 38A, VGS = 0V, Note 1  
IF = 38A, VGS = 0V  
300  
1.5  
trr  
69  
5.7  
ns  
A
IRM  
QRM  
-di/dt = 100A/s  
VR = 75V  
197  
nC  
Notes: 1. Pulse test, t 300s, duty cycle, d  2%.  
2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm  
or less from the package body.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFA76N15T2 IXFP76N15T2  
IXFH76N15T2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
240  
200  
160  
120  
80  
V
= 15V  
10V  
V
= 15V  
10V  
GS  
GS  
8V  
7V  
6V  
7V  
6V  
5V  
40  
5V  
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
24  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 38A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 15V  
GS  
V
= 10V  
GS  
10V  
7V  
I
= 76A  
D
6V  
5V  
I
= 38A  
D
4V  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 38A Value vs.  
Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
4.6  
4.2  
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
V
= 10V  
GS  
T = 175ºC  
J
T = 25ºC  
J
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXFA76N15T2 IXFP76N15T2  
IXFH76N15T2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
140  
120  
100  
80  
140  
120  
100  
80  
T
J
= - 40ºC  
T
J
= 150ºC  
25ºC  
- 40ºC  
25ºC  
150ºC  
60  
60  
40  
40  
20  
20  
0
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
0
20  
40  
60  
80  
100  
120  
140  
160  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
10  
9
8
7
6
5
4
3
2
1
0
240  
200  
160  
120  
80  
V
= 75V  
DS  
I
I
= 38A  
D
G
= 10mA  
T
J
= 150ºC  
T
J
= 25ºC  
40  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
10,000  
1,000  
100  
1000  
100  
10  
R
(on) Limit  
DS  
C
iss  
25µs  
100µs  
C
C
oss  
1ms  
1
10ms  
T
= 175ºC  
= 25ºC  
rss  
J
T
C
DC  
= 1 MHz  
5
f
Single Pulse  
0.1  
10  
1
10  
100  
1000  
0
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFA76N15T2 IXFP76N15T2  
IXFH76N15T2  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time  
vs. Drain Current  
22  
21  
20  
19  
18  
17  
16  
22  
21  
20  
19  
18  
17  
R
= 5Ω , V = 10V  
GS  
R
= 5Ω , V = 10V  
GS  
G
G
V
= 75V  
DS  
V
= 75V  
DS  
T
= 125ºC  
= 25ºC  
J
I
I
= 152A  
= 76A  
D
D
T
J
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
30  
40  
50  
60  
70  
80  
90 100 110 120 130 140 150 160  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
22  
20  
19  
18  
17  
16  
15  
14  
16.0  
15.5  
15.0  
14.5  
14.0  
13.5  
13.0  
30  
28  
26  
24  
22  
20  
18  
t r  
t
d(on) - - - -  
t f  
t
d(off) - - - -  
21  
20  
19  
18  
17  
16  
TJ = 125ºC, V = 10V  
GS  
R
= 5Ω, V = 10V  
GS  
G
V
= 75V  
DS  
V
= 75V  
DS  
I
= 76A, 152A  
D
I
= 76A, 152A  
D
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
4
6
8
10  
12  
14  
16  
18  
20  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off Switching Times  
vs. Drain Current  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
17  
16  
15  
14  
13  
12  
11  
10  
30  
29  
28  
27  
26  
25  
24  
23  
18  
17  
16  
15  
14  
13  
12  
11  
34  
t f  
t
d(off) - - - -  
t f  
t
d(off) - - - -  
32  
30  
28  
26  
24  
22  
20  
T
J
= 125ºC, V = 10V  
GS  
R
G
= 5ꢀ, VGS = 10V  
VDS = 75V  
V
= 75V  
DS  
T
= 125ºC  
I
= 152A  
J
D
I
= 76A  
D
T
J
= 25ºC  
30 40 50  
60 70 80 90 100 110 120 130 140 150 160  
ID - Amperes  
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXFA76N15T2 IXFP76N15T2  
IXFH76N15T2  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
TO-263 Outline  
TO-247 Outline  
TO-220 Outline  
D
A
A2  
A
B
E
Q
S
D2  
P1  
R
D1  
D
4
1
2
3
L1  
C
E1  
1 = Gate  
2 = Drain  
3 = Source  
4 = Drain  
L
A1  
b
C
b2  
1 - Gate  
b4  
e
2,4 - Drain  
3 - Source  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_76N15T2(4V)7-02-09  
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