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IXFH24N60X

型号：

IXFH24N60X

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

211 K

下载PDF手册
Preliminary Technical Information  
X-Class HiPerFETTM  
Power MOSFET  
VDSS = 600V  
ID25 = 24A  
RDS(on) 175m  
IXFA24N60X  
IXFP24N60X  
IXFQ24N60X  
IXFH24N60X  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-220AB (IXFP)  
TO-263 AA (IXFA)  
G
G
S
D
D (Tab)  
S
TO-3P (IXFQ)  
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
S
TJ = 25C to 150C  
600  
600  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
D (Tab)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
TO-247 (IXFH)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
24  
48  
A
A
IA  
TC = 25C  
TC = 25C  
8
A
G
D
S
EAS  
500  
mJ  
D (Tab)  
D = Drain  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
V/ns  
W
G = Gate  
S = Source  
400  
Tab = Drain  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220, TO-3P & TO-247)  
10..65 / 2.2..14.6  
N/lb  
Nm/lb.in  
1.13 / 10  
Low Package Inductance  
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
6.0  
g
g
g
g
Advantages  
TO-247  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 2.5mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
600  
V
V
Applications  
2.5  
4.5  
Switch-Mode and Resonant-Mode  
100 nA  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
IDSS  
20 A  
750 A  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
175 m  
Robotics and Servo Controls  
DS100647B(5/15)  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXFA24N60X IXFP24N60X  
IXFQ24N60X IXFH24N60X  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
7
12  
S
RGi  
2.1  
Ciss  
Coss  
Crss  
1910  
1400  
18  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
100  
330  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
td(on)  
tr  
td(off)  
tf  
18  
29  
45  
15  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 5(External)  
Qg(on)  
Qgs  
47  
11  
23  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.31 C/W  
TO-220  
TO-247 & TO-3P  
0.50  
0.25  
C/W  
C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
24  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
96  
1.4  
V
trr  
QRM  
IRM  
140  
840  
12  
ns  
IF = 12A, -di/dt = 100A/μs  
nC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFA24N60X IXFP24N60X  
IXFQ24N60X IXFH24N60X  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
24  
20  
16  
12  
8
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
V
= 10V  
GS  
GS  
9V  
8V  
9V  
8V  
7V  
7V  
6V  
6V  
5V  
4
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
0
4
8
12  
16  
20  
24  
28  
32  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 12A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
24  
20  
16  
12  
8
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10V  
9V  
GS  
V
= 10V  
GS  
8V  
I
= 24A  
D
7V  
I
= 12A  
D
6V  
5V  
4
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
8
9
10  
11  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 12A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
28  
24  
20  
16  
12  
8
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
V
= 10V  
GS  
T = 125ºC  
J
T = 25ºC  
J
4
0
0
8
16  
24  
32  
40  
48  
56  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
ID - Amperes  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXFA24N60X IXFP24N60X  
IXFQ24N60X IXFH24N60X  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
30  
25  
20  
15  
10  
5
22  
20  
18  
16  
14  
12  
10  
8
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
25ºC  
- 40ºC  
6
4
2
0
0
0
4
8
12  
16  
20  
24  
28  
32  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
80  
70  
60  
50  
40  
30  
20  
10  
0
10  
8
V
= 300V  
DS  
I
I
= 12A  
D
G
= 10mA  
6
4
T
J
= 125ºC  
2
T
J
= 25ºC  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
10,000  
1,000  
100  
10  
100  
10  
R
Limit  
)
DS(  
on  
C
C
iss  
25µs  
100µs  
oss  
1
1ms  
0.1  
0.01  
T = 150ºC  
J
10ms  
C
rss  
T
= 25ºC  
C
= 1 MHz  
f
DC  
Single Pulse  
1
1
10  
100  
1000  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFA24N60X IXFP24N60X  
IXFQ24N60X IXFH24N60X  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Maximum Transient Thermal Impedance  
18  
16  
14  
12  
10  
8
1
0.1  
6
0.01  
4
2
0.001  
0
0.0001  
0.001  
0.01  
0.1  
1
10  
0
100  
200  
300  
400  
500  
600  
Pulse Width - Seconds  
VDS - Volts  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_24N60X(J6) 5-20-15-A  
IXFA24N60X IXFP24N60X  
IXFQ24N60X IXFH24N60X  
TO-3P Outline  
TO-263 Outline  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
1. Gate  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
2. Drain  
3. Source  
4. Drain  
E
9.65  
10.41  
.380  
.405  
E1  
e
L
L1  
L2  
L3  
L4  
6.22  
2.54  
14.61  
2.29  
1.02  
1.27  
0
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.100 BSC  
.320  
1. Gate  
2. Drain  
3. Source  
4. Drain  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
TO-247 Outline  
P  
TO-220 Outline  
1
2
3
Pins:  
e
1 - Gate  
Terminals: 1 - Gate  
2 - Drain  
2 - Drain  
3 - Source  
3 - Source  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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