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IXFH60N60X

型号：

IXFH60N60X

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

222 K

下载PDF手册
Preliminary Technical Information  
X-Class HiPerFETTM  
Power MOSFET  
VDSS = 600V  
ID25 = 60A  
RDS(on) 55m  
IXFQ60N60X  
IXFH60N60X  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-3P (IXFQ)  
Fast Intrinsic Diode  
G
D
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
600  
600  
V
V
TO-247 (IXFH)  
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
60  
A
A
S
D (Tab)  
D = Drain  
120  
IA  
TC = 25C  
TC = 25C  
30  
A
J
G = Gate  
S = Source  
EAS  
2.5  
Tab = Drain  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
V/ns  
W
890  
TJ  
-55 ... +150  
150  
C  
C  
C  
Features  
TJM  
Tstg  
-55 ... +150  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Low Package Inductance  
Md  
Mounting Torque  
1.13 / 10  
Nm/lb.in  
Weight  
TO-3P  
TO-247  
5.5  
6.0  
g
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 8mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
600  
V
V
2.5  
4.5  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
100 nA  
IDSS  
25 A  
1.25 mA  
TJ = 125C  
Robotics and Servo Controls  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
55 m  
DS100656A(5/15)  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXFQ60N60X  
IXFH60N60X  
Symbol  
Test Conditions  
Characteristic Values  
TO-3P Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
A
0P  
0P1  
E
E1  
+
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
24  
40  
S
A2  
S
+
+
RGi  
1.4  
D1  
D
Ciss  
Coss  
Crss  
5800  
4130  
40  
pF  
pF  
pF  
4
1
2
3
VGS = 0V, VDS = 25V, f = 1MHz  
L1  
A1  
Effective Output Capacitance  
Co(er)  
Co(tr)  
285  
930  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
c
b
b2  
b4  
e
PINS: 1 - Gate  
2, 4 - Drain  
td(on)  
tr  
td(off)  
tf  
27  
23  
90  
13  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
3 - Source  
V
RG = 2(External)  
Qg(on)  
Qgs  
143  
30  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
70  
RthJC  
RthCS  
0.14 C/W  
C/W  
0.25  
Source-Drain Diode  
TO-247 Outline  
D
A
A
Symbol  
Test Conditions  
Characteristic Values  
0P  
+
B
O 0K M D B M  
E
A2  
A2  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
Q
S
D2  
+
+
4
R
IS  
VGS = 0V  
60  
A
A
D1  
D
0P1  
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
240  
1.4  
1
2
3
ixys option  
C
L1  
E1  
V
L
trr  
QRM  
IRM  
200  
1.9  
18.5  
ns  
IF = 30A, -di/dt = 100A/μs  
A1  
b
b2  
μC  
c
b4  
VR = 100V  
PINS: 1 - Gate  
e
A
+
O
2, 4 - Drain  
3 - Source  
J
M
C
A M  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFQ60N60X  
IXFH60N60X  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
9V  
GS  
160  
140  
120  
100  
80  
V
= 10V  
8V  
GS  
7V  
8V  
7V  
6V  
5V  
60  
40  
6V  
5V  
20  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 30A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
60  
50  
40  
30  
20  
10  
0
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
GS  
V
= 10V  
GS  
8V  
7V  
I
= 60A  
D
6V  
I
= 30A  
D
5V  
4V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
8
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 30A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
T = 125ºC  
J
BV  
DSS  
T = 25ºC  
J
V
GS(th)  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXFQ60N60X  
IXFH60N60X  
Fig. 7. Maximum Drain Current vs.  
Case Temperature  
Fig. 8. Input Admittance  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= 125ºC  
25ºC  
- 40ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 9. Transconductance  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
80  
70  
60  
50  
40  
30  
20  
10  
0
200  
180  
160  
140  
120  
100  
80  
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
60  
T
J
= 25ºC  
40  
20  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
ID - Amperes  
VSD - Volts  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
10  
8
100,000  
10,000  
1,000  
100  
V
= 300V  
DS  
I
I
= 30A  
D
G
C
iss  
= 10mA  
6
C
oss  
4
2
10  
C
rss  
= 1 MHz  
f
0
1
0
20  
40  
60  
80  
100  
120  
140  
1
10  
100  
1000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFQ60N60X  
IXFH60N60X  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
45  
40  
35  
30  
25  
20  
15  
10  
5
1000  
100  
10  
R
Limit  
)
DS(  
on  
25µs  
100µs  
1ms  
1
T
J
= 150ºC  
= 25ºC  
T
C
10ms  
Single Pulse  
100ms  
DC  
0
0.1  
0
100  
200  
300  
400  
500  
600  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_60N60X(J8-R4T45) 5-22-15-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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