SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
FZT491
ISSUE 3 - OCTOBER 1995
✪
C
E
COMPLEMENTARY TYPE
PARTMARKING DETAIL
FZT591
FZT491
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
80
Collector-Emitter Voltage
60
V
Emitter-Base Voltage
5
V
Peak Pulse Current
2
A
Continuous Collector Current
Base Current
IC
1
A
IB
200
2
mA
W
°C
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
Ptot
Tj:Tstg
-55 to +150
= 25°C).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
80
60
5
V
IC=100µA
IC=10mA*
IE=100µA
VCB=60V
V
V
Collector Cut-Off
Current
100
nA
Emitter Cut-Off Current
IEBO
100
100
nA
nA
VEB=4V
Collector-Emitter Cut-Off ICES
Current
VCES=60V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.25
0.5
V
V
IC=500mA, IB =50mA*
IC=1A, IB =100mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
1.1
V
IC=1A, IB=100mA*
Base-Emitter Turn-On
Voltage
1.0
V
IC =1A, VCE =5V*
Static Forward Current
100
100
80
IC=1mA, VCE =5V
IC =500mA, VCE =5V*
IC =1A, VCE =5V*
IC = 2A, VCE =5V*
300
10
30
Transition Frequency
Output Capacitance
fT
150
MHz
pF
IC=50mA, VCE=10V,
f =100MHz
Cobo
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs.
For typical characteristics graphs see FMMT491 datasheet
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