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IXBT24N170

型号：

IXBT24N170

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

177 K

下载PDF手册
High Voltage, High Gain  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
VCES = 1700V  
IC110 = 24A  
VCE(sat) ≤ 2.5V  
IXBT24N170  
IXBH24N170  
TO-268 (IXBT)  
G
E
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
C (Tab)  
TJ = 25°C to 150°C  
1700  
1700  
V
V
TO-247 (IXBH)  
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
IC25  
IC110  
ICM  
TC = 25°C  
60  
24  
A
A
A
G
C
TC = 110°C  
TC = 25°C, 1ms  
C (Tab)  
E
230  
G = Gate  
E = Emiiter  
C
= Collector  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 10Ω  
ICM = 50  
A
V
Tab = Collector  
(RBSOA)  
Clamped Inductive Load  
VCES ≤ 1360  
PC  
TC = 25°C  
250  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z
High Blocking Voltage  
z International Standard Packages  
z Low Conduction Losses  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-268  
TO-247  
4
6
g
g
Advantages  
z Low Gate Drive Requirement  
z High Power Density  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
1700  
2.5  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
V
V
z Switch-Mode and Resonant-Mode  
Power Supplies  
5.0  
z Uninterruptible Power Supplies (UPS)  
z Laser Generators  
ICES  
VCE = 0.8 • VCES, VGE = 0V  
25 μA  
500 μA  
TJ = 125°C  
TJ = 125°C  
z Capacitor Discharge Circuits  
z AC Switches  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = IC110, VGE = 15V, Note 1  
2.5  
V
V
2.4  
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100190A(03/13)  
IXBT24N170  
IXBH24N170  
Symbol  
Test Conditions  
Characteristic Values  
TO-268 Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = IC110, VCE = 10V, Note 1  
15  
25  
S
Cies  
Coes  
Cres  
2790  
163  
60  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg(on)  
Qge  
140  
16  
nC  
nC  
nC  
IC = IC110, VGE = 15V, VCE = 0.5 • VCES  
Qgc  
60  
Terminals: 1 - Gate  
2,4 - Collector  
3 - Emitter  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
33  
82  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 25°C  
IC = IC110, VGE = 15V  
315  
750  
VCE = 850V, RG = 10Ω  
35  
155  
325  
960  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 125°C  
IC = IC110, VGE = 15V  
VCE = 850V, RG = 10Ω  
RthJC  
RthCS  
0.50 °C/W  
°C/W  
TO-247  
0.21  
TO-247 Outline  
Reverse Diode  
∅ P  
1
2
3
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 24A, VGE = 0V  
2.8  
V
IF = 12A, VGE = 0V, -diF/dt = 100A/μs  
trr  
1.06  
26  
μs  
VR = 100V  
e
IRM  
A
Terminals: 1 - Gate  
2 - Collector  
3 - Emitter  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXBT24N170  
IXBH24N170  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
48  
40  
32  
24  
16  
8
300  
250  
200  
150  
100  
50  
VGE = 25V  
VGE = 25V  
19V  
15V  
13V  
11V  
21V  
19V  
17V  
13V  
11V  
15V  
9V  
7V  
9V  
7V  
5V  
8
5V  
0
0
0
0
5
0.5  
1
1.5  
2
2.5  
3
3.5  
25  
0
-50  
3
2
4
6
10  
12  
14  
16  
18  
20  
150  
9
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
48  
40  
32  
24  
16  
8
VGE = 25V  
VGE = 15V  
19V  
15V  
13V  
11V  
I C = 48A  
9V  
7V  
I C = 24A  
I C = 12A  
5V  
0
0.5  
1
1.5  
2
2.5  
3
-25  
0
25  
50  
75  
100  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
TJ = 25ºC  
I C = 48A  
24A  
TJ = 125ºC  
25ºC  
- 40ºC  
12A  
4
5
6
7
8
7
9
11  
13  
15  
17  
19  
21  
23  
VGE - Volts  
VGE - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXBT24N170  
IXBH24N170  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
Fig. 7. Transconductance  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
TJ = 25ºC  
125ºC  
0
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
3.2  
40  
10  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100 110 120  
VF - Volts  
IC - Amperes  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
16  
14  
12  
10  
8
10,000  
1,000  
100  
f = 1 MHz  
VCE = 850V  
I
I
C = 24A  
G = 10mA  
C
C
C
ies  
oes  
res  
6
4
2
10  
0
0
5
10  
15  
20  
25  
30  
35  
0
20  
40  
60  
80  
100  
120  
140  
VCE - Volts  
QG - NanoCoulombs  
Fig. 11. Reverse-Bias Safe Operating Area  
Fig. 12. Maximum Transient Thermal Impedance  
1
60  
50  
40  
30  
20  
10  
0
0.1  
0.01  
TJ = 125ºC  
RG = 10Ω  
dv / dt < 10V / ns  
0.001  
200  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
VCE - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXBT24N170  
IXBH24N170  
Fig. 14. Resistive Turn-on Rise Time  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
vs. Collector Current  
350  
300  
250  
200  
150  
100  
50  
350  
300  
250  
200  
150  
100  
50  
RG = 10Ω , VGE = 15V  
RG = 10Ω , VGE = 15V  
VCE = 850V  
VCE = 850V  
I C = 48A  
TJ = 125ºC  
I C = 24A  
TJ = 25ºC  
0
0
10  
15  
20  
25  
30  
35  
40  
45  
50  
25  
10  
10  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
500  
450  
400  
350  
300  
250  
200  
150  
100  
100  
90  
80  
70  
60  
50  
40  
30  
20  
1200  
1100  
1000  
900  
340  
330  
320  
310  
300  
290  
280  
270  
260  
tf  
t
d(off) - - - -  
tr  
t
d(on) - - - -  
RG = 10Ω, VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 850V  
VCE = 850V  
I C = 48A  
I C = 24A  
800  
I C = 24A  
700  
600  
500  
I C = 48A  
400  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
15  
20  
25  
30  
35  
40  
45  
50  
55  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times  
vs. Collector Current  
1500  
1400  
1300  
1200  
1100  
1000  
900  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
1300  
1200  
1100  
1000  
900  
420  
400  
380  
360  
340  
320  
300  
280  
260  
240  
tf  
td(off  
) - - - -  
tf  
t
d(off) - - - -  
TJ = 125ºC, VGE = 15V  
RG = 10Ω, VGE = 15V  
VCE = 850V  
VCE = 850V  
800  
I C = 24A  
700  
800  
I C = 48A  
600  
700  
TJ = 25ºC, 125ºC  
500  
600  
400  
500  
15  
20  
25  
30  
35  
40  
45  
50  
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
RG - Ohms  
IC - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYS REF: B_24N170(6N)9-09-09  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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