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QSX5TR

型号:

QSX5TR

品牌:

ROHM[ ROHM ]

页数:

3 页

PDF大小:

56 K

QSX5  
QSX5  
Transistors  
Low frequency amplifier  
QSX5  
zExternal dimensions (Unit : mm)  
zApplication  
Low frequency amplifier  
Driver  
2.8  
1.6  
zFeatures  
1)  
A collector current is large.  
<
=
2) CE(sat)  
180mV  
V
C
B
At I = 1A / I = 50mA  
Each lead has same dimensions  
Abbreviated symbol : X05  
zAbsolute maximum ratings (Ta=25°C)  
zEquivalent circuit  
Parameter  
Collector-base voltage  
Symbol  
Limits  
15  
12  
6
Unit  
V
V
(6)  
(5)  
(4)  
VCBO  
VCEO  
VEBO  
Collector-emitter voltage  
Emitter-base voltage  
V
I
C
2
4
A
A
Collector current  
Power dissipation  
1  
I
CP  
500  
1.25  
mW 2  
W
P
C
3  
(1)  
(2)  
(3)  
Junction temperature  
Tj  
Tstg  
150  
55 to +150  
°C  
°C  
Range of storage temperature  
1 Single pulse, P  
W
=1ms  
2Each Terminal Mounted on a Recommended  
t
3Mounted on a 25mm×25mm× 0.8mm Ceramic substrate  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
BVCBO  
BVCEO  
BVEBO  
Min.  
Typ.  
90  
360  
20  
Max.  
Unit  
Conditions  
15  
12  
6
V
V
I
I
I
C
=10µA  
=1mA  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
C
V
E
=10µA  
CB=15V  
EB=6V  
I
CBO  
EBO  
CE(sat)  
FE  
270  
100  
100  
180  
680  
nA  
nA  
mV  
MHz  
pF  
V
V
I
Emitter cutoff current  
Collector-emitter saturation voltage  
DC current gain  
V
I
C=1A, I  
B
=50mA  
h
V
V
V
CE=2V, I  
CE=2V, I  
C
=200mA∗  
f
T
E
=−200mA, f=100MHz∗  
Transition frequency  
CB=10V, I  
E=0A, f=1MHz  
Cob  
Collector output capacitance  
Pulsed  
Rev.A  
1/2  
QSX5  
Transistors  
zPackaging specifications  
Package  
Taping  
TR  
Type  
Code  
Basic ordering unit (pieces)  
3000  
QSX5  
zElectrical characteristic curves  
1000  
1
1
V
CE=2V  
I
V
C B=20/1  
/I  
CE=2V  
Pulsed  
Ta=100°C  
Ta=25°C  
Pulsed  
Pulsed  
Ta=25°C  
Ta=25°C  
Ta=−40°C  
0.1  
0.01  
0.1  
Ta=100°C  
Ta=−40°C  
100  
I
C/I  
B=50/1  
0.01  
IC/IB  
=20/1  
I
C/I  
B=10/1  
10  
0.001  
0.001  
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
COLLECTOR CURRENT : I  
C (A)  
COLLECTOR CURRENT : IC (A)  
COLLECTOR CURRENT : IC (A)  
Fig.1 DC current gain  
Fig.3 Collector-emitter saturation voltage  
vs. collector current  
Fig.2 Base-emitter saturation voltage  
vs. collector current  
vs. collector current  
10  
1
1000  
1000  
Ta=25°C  
Ta=25°C  
V
CE=2V  
V
CE=5V  
V
CE=2V  
Pulsed  
f=100MHz  
f=100MHz  
tstg  
100  
Ta=100°C  
Ta=25°C  
100  
0.1  
0.01  
Ta=−40°C  
10  
1
tdon  
tf  
tr  
0.001 0  
0.5  
1
1.5  
0.001  
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
10  
EMITTER CURRENT : I  
E
(A)  
BASE TO EMITTER CURRENT : VBE (V)  
COLLECTOR CURRENT : I  
Fig.6 Switching time  
C (A)  
Fig.5 Gain bandwidth product  
vs. emitter current  
Fig.4 Grounded emitter propagation  
characteristics  
1000  
Ta  
=
25˚C  
0A  
1MHz  
I
C=  
f
=
Cib  
100  
Cob  
10  
1
0.1  
1
10  
100  
EMITTER TO BASE VOLTAGE : VEB V)  
(
COLLECTOR TO BASE VOLTAGE : VCB V)  
(
Fig.7 Collector output capacitance  
vs. collector-base voltage  
Emitter input capacitance  
vs. emitter-base voltage  
Rev.A  
2/2  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  
厂商 型号 描述 页数 下载

ROHM

QSX1 通用扩增( 15V , 6A )[ General purpose amplification (15V, 6A) ] 3 页

ROHM

QSX1TR [ Small Signal Bipolar Transistor, 6A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, TSMT6, 6 PIN ] 3 页

ROHM

QSX2 通用扩增( 30V , 5A )[ General purpose amplification (30V, 5A) ] 3 页

ROHM

QSX2TR [ 暂无描述 ] 3 页

ROHM

QSX3 低频放大器[ Low frequency amplifier ] 3 页

ROHM

QSX3TR [ Small Signal Bipolar Transistor, 5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TSMT6, 6 PIN ] 3 页

ROHM

QSX4 低频放大器[ Low frequency amplifier ] 3 页

ROHM

QSX4TR [ Small Signal Bipolar Transistor, 2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TSMT6, 6 PIN ] 3 页

ROHM

QSX5 低频放大器[ Low frequency amplifier ] 3 页

ROHM

QSX6 低频放大器[ Low frequency amplifier ] 3 页

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