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UZDT1048

型号:

UZDT1048

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

3 页

PDF大小:

57 K

SM-8 DUAL NPN MEDIUM POWER  
ZDT1048  
HIGH GAIN TRANSISTORS  
ISSUE 2 - FEBRUARY 1996  
C1  
C1  
C2  
C2  
B1  
E1  
B2  
E2  
SM-8  
PARTMARKING DETAIL – T1048  
(8 LEAD SOT223)  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
50  
17.5  
V
5
V
20  
5
A
Continuous Collector Current  
Base Current  
IC  
A
IB  
500  
mA  
°C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +150  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
Ptot  
VALUE  
UNIT  
Total Power Dissipation at Tamb = 25°C*  
Any single die “on”  
Both die “on” equally  
2.25  
2.75  
W
W
Derate above 25°C*  
Any single die “on”  
Both die “on” equally  
18  
22  
mW/ °C  
mW/ °C  
Thermal Resistance - Junction to Ambient*  
Any single die “on”  
Both die “on” equally  
55.6  
45.5  
°C/ W  
°C/ W  
* The power which can be dissipated assuming the device is mounted in a typical manner  
on a PCB with copper equal to 2 inches square.  
3 - 357  
ZDT1048  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX.  
UNIT  
CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V
V
V
V
V
50  
50  
17.5  
50  
5
85  
85  
24  
85  
8.7  
V
I =100µA  
(BR)CBO  
CES  
C
Collector-Emitter  
Breakdown Voltage  
V
V
V
V
I =100µA  
C
Collector-Emitter  
Breakdown Voltage  
I =10mA  
C
CEO  
Collector-Emitter  
Breakdown Voltage  
I =100µA, V =1V  
C
CEV  
EB  
Emitter-Base Breakdown  
Voltage  
I =100µA  
E
(BR)EBO  
Collector Cutoff Current  
Emitter Cutoff Current  
I
I
I
0.3  
0.3  
0.3  
10  
10  
10  
nA  
nA  
nA  
V
V
V
=35V  
=4V  
CBO  
EBO  
CES  
CB  
EB  
Collector Emitter Cutoff  
Current  
=35V  
CES  
Collector-Emitter Saturation V  
Voltage  
27  
55  
45  
75  
mV  
mV  
mV  
mV  
mV  
I =0.5A, I =10mA*  
C B  
I =1A, I =10mA*  
C B  
CE(sat)  
120  
200  
200  
160  
240  
300  
I =2A, I =10mA*  
C B  
I =5A, I =100mA*  
C
B
I =5A, I =50mA*  
C B  
Base-Emitter  
Saturation Voltage  
V
V
1000  
900  
1100  
1000  
mV  
mV  
I =5A, I =100mA*  
C B  
BE(sat)  
BE(on)  
FE  
Base-Emitter Turn-On  
Voltage  
I =5A, V =2V*  
C CE  
Static Forward Current  
Transfer Ratio  
h
280  
300  
300  
250  
50  
440  
450  
450  
300  
80  
I =10mA, V =2V*  
CE  
C
I =0.5A, V =2V*  
CE  
C
1200  
I =1A, V =2V*  
CE  
C
I =5A, V =2V*  
CE  
C
I =20A, V =2V*  
C CE  
Transition Frequency  
Output Capacitance  
Switching Times  
f
150  
MHz  
I =50mA, V =10V  
CE  
T
C
f=50MHz  
C
60  
80  
pF  
ns  
ns  
V =10V, f=1MHz  
CB  
obo  
t
on  
t
off  
120  
250  
I =4A, I =40mA, V =10V  
CC  
C
B
I =4A, I =±40mA, V =10V  
CC  
C
B
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
3 - 358  
ZDT1048  
TYPICAL CHARACTERISTICS  
0.8  
0.6  
0.4  
0.8  
I /I =100  
+25°C  
0.6  
0.4  
I /I =50  
I /I =100  
I /I =200  
-55°C  
+25°C  
+100°C  
+175°C  
0.2  
0.2  
1mA 10mA 100mA  
1A  
10A  
100A  
1mA 10mA 100mA  
1A  
10A  
100A  
IC-Collector Current  
IC-Collector Current  
VCE(sat) v IC  
VCE(sat) v IC  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
V
=2V  
I /I =100  
700  
600  
500  
400  
300  
200  
100  
1mA 10mA 100mA  
1A  
10A  
100A  
1mA 10mA 100mA  
1A  
10A  
100A  
IC-Collector Current  
IC-Collector Current  
VBE(sat) v Ic  
hFE v IC  
Single Pulse Test Tamb=25C  
100  
10  
1
V
=2V  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
DC  
1s  
100ms  
10ms  
1ms  
100us  
0.1  
0.01  
1mA 10mA 100mA  
1A  
10A  
100A  
10mV  
100mV  
1V  
10V  
100V  
IC-Collector Current  
VCE - Collector Voltage  
VBE(on) v IC  
Safe Operating Area  
3 - 359  
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