请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXFN110N85X

型号：

IXFN110N85X

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

133 K

下载PDF手册
Advance Technical Information  
X-Class HiPerFETTM  
Power MOSFET  
VDSS = 850V  
ID25 = 110A  
RDS(on) 33m  
IXFN110N85X  
D
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
G
S
miniBLOC, SOT-227  
E153432  
S
S
Symbol  
Test Conditions  
Maximum Ratings  
G
VDSS  
VDGR  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
850  
850  
V
V
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
S
D
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
110  
220  
A
A
G = Gate  
D = Drain  
S = Source  
IA  
EAS  
TC = 25C  
TC = 25C  
55  
3
A
J
PD  
TC = 25C  
1170  
50  
W
dv/dt  
IS IDM, VDD VDSS, TJ 150°C  
V/ns  
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
International Standard Package  
miniBLOC, with Aluminium Nitride  
Isolation  
Isolation Voltage 2500V~  
High Current Handling Capability  
Fast Intrinsic Diode  
VISOL  
50/60 Hz, RMS  
IISOL 1mA  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in  
Nm/lb.in  
Avalanche Rated  
Weight  
30  
g
Low RDS(on)  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
850  
3.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Applications  
5.5  
200 nA  
50 A  
Switch-Mode and Resonant-Mode  
Power Supplies  
IDSS  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
TJ = 125C  
5
mA  
RDS(on)  
VGS = 10V, ID = 55A, Note 1  
33 m  
© 2016 IXYS CORPORATION, All Rights Reserved  
DS100731(6/16)  
IXFN110N85X  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXFN) Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 55A, Note 1  
Gate Input Resistance  
43  
72  
S
RGi  
0.55  
Ciss  
Coss  
Crss  
17  
16  
nF  
nF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
260  
Effective Output Capacitance  
Co(er)  
Co(tr)  
470  
pF  
pF  
VGS = 0V  
Energy related  
Time related  
VDS = 0.8 • VDSS  
2170  
td(on)  
tr  
td(off)  
tf  
50  
25  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 55A  
(M4 screws (4x) supplied)  
V
144  
11  
RG = 1(External)  
Qg(on)  
Qgs  
425  
105  
225  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 55A  
Qgd  
RthJC  
RthCS  
0.107C/W  
0.05C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
110  
440  
1.4  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS , VGS = 0V, Note 1  
trr  
205  
5.5  
ns  
μC  
A
IF = 55A, -di/dt = 300A/s  
QRM  
IRM  
VR = 100V, VGS = 0V  
54.0  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN110N85X  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
250  
200  
150  
100  
50  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
8V  
7V  
6V  
6V  
5V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
5
10  
15  
20  
25  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 55A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
GS  
V
= 10V  
GS  
8V  
7V  
I
= 110A  
D
I
= 55A  
D
6V  
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
8
9
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 55A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
V
= 10V  
GS  
T
J
= 125ºC  
BV  
DSS  
V
GS(th)  
T
J
= 25ºC  
0
50  
100  
150  
200  
250  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXFN110N85X  
Fig. 8. Input Admittance  
Fig. 7. Maximum Drain Current vs. Case Temperature  
160  
140  
120  
100  
80  
120  
100  
80  
60  
40  
20  
0
T
J
= 125ºC  
25ºC  
- 40ºC  
60  
40  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 9. Transconductance  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
140  
120  
100  
80  
300  
250  
200  
150  
100  
50  
T
J
= - 40ºC  
25ºC  
125ºC  
60  
T
J
= 125ºC  
40  
T
J
= 25ºC  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
ID - Amperes  
VSD - Volts  
Fig. 11. Gate Charge  
Fig. 12. Capacitance  
10  
8
100  
10  
V
= 425V  
DS  
I
I
= 55A  
D
G
= 10mA  
C
C
iss  
6
1
oss  
4
0.1  
2
0.01  
0.001  
= 1 MHz  
f
C
rss  
0
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
1
10  
100  
1000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFN110N85X  
Fig. 14. Forward-Bias Safe Operating Area  
Fig. 13. Output Capacitance Stored Energy  
1000  
100  
10  
160  
140  
120  
100  
80  
R
DS(  
on  
Limit  
)
25µs  
100µs  
60  
1ms  
40  
1
T
= 150ºC  
= 25ºC  
J
T
C
20  
Single Pulse  
10ms  
DC  
0
0.1  
0
100  
200  
300  
400  
500  
600  
700  
800  
900  
1
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaaa  
0.2  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_110N85X (U9-D307) 6-06-16  
厂商 型号 描述 页数 下载

ILSI

 		IXF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A20AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.210393s