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IXBX25N250

型号：

IXBX25N250

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

167 K

下载PDF手册
High Voltage, High Gain  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
VCES = 2500V  
IC90 = 25A  
VCE(sat) ≤ 3.3V  
IXBX25N250  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
PLUS247TM  
TC = 25°C to 150°C  
2500  
2500  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1ms  
55  
25  
180  
A
A
A
C
Tab  
E
G = Gate  
C = Collector  
E
= Emitter  
Tab = Collector  
SSOA  
(RBSOA)  
PC  
VGE = 15V, TVJ = 125°C, RG = 4.7Ω  
Clamped Inductive Load  
TC = 25°C  
ICM = 80  
VCES ≤ 2000  
300  
A
V
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
TJM  
Tstg  
z
High Blocking Voltage  
-55 ... +150  
z International Standard Package  
z Low Conduction Losses  
TL  
TSOLD  
1.6mm (0.062 in.) From Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
FC  
Mounting Force  
20..120 / 4.5..27  
N/lb.  
g
Advantages  
Weight  
6
z Low Gate Drive Requirement  
z High Power Density  
Applications  
z Switch-Mode and Resonant-Mode  
Power Supplies  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
z Uninterruptible Power Supplies (UPS)  
z Laser Generator  
Min.  
Typ. Max.  
BVCES  
IC = 250μA, VGE = 0V  
2500  
V
V
z Capacitor Discharge Circuit  
z AC Switches  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
2.5  
5.0  
VCE = 0.8 • VCES, VGE = 0V  
50 μA  
mA  
TJ = 125°C  
TJ = 125°C  
3
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = IC90, VGE = 15V, Note 1  
3.3  
V
V
3.4  
© 2010 IXYS CORPORATION, All Rights Reserved  
DS100044A(10/10)  
IXBX25N250  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
PLUS 247TM (IXBX) Outline  
Min.  
Typ.  
Max.  
gfS  
IC = 25A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
11  
18  
S
Cies  
Coes  
Cres  
2450  
96  
pF  
pF  
pF  
35  
Qg  
103  
17  
nC  
nC  
nC  
Qge  
Qgc  
IC = 25A, VGE = 15V, VCE = 1000V  
43  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
55  
240  
145  
640  
ns  
ns  
ns  
ns  
Resistive Switching times, TJ = 25°C  
Terminals: 1 - Gate  
2 - Collector  
IC = 25A, VGE = 15V  
3 - Emitter  
VCE = 1250V, RG = 4.7Ω  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
54  
640  
140  
510  
ns  
ns  
ns  
ns  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
Resistive Switching times, TJ = 125°C  
IC = 25A, VGE = 15V  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
VCE = 1250V, RG = 4.7Ω  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
RthJC  
RthCS  
0.42 °C/W  
°C/W  
0.15  
e
L
L1  
5.45 BSC  
19.81 20.32  
3.81  
.215 BSC  
.780 .800  
.150 .170  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
Reverse Diode  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
Max.  
VF  
IF = 25A, VGE = 0V  
2.3  
V
trr  
1.6  
μs  
IF = 25A, -diF/dt = 100A/μs  
IRM  
37.2  
A
VR = 100V, VGE = 0V  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
*Additional provisions for lead to lead voltage isolation are required at VDS > 1200V.  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXBX25N250  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGE = 25V  
VGE = 25V  
20V  
250  
200  
150  
100  
50  
20V  
15V  
15V  
10V  
10V  
0
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0
0
5
0.5  
1
1.5  
2
2.5  
3
3.5  
4
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGE = 25V  
VGE = 15V  
20V  
15V  
I C = 50A  
10V  
I C = 25A  
I C = 12.5A  
5V  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 6. Breakdown & Threshold Voltages  
vs. Junction Temperature  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
1.15  
1.10  
1.05  
1.00  
0.95  
0.90  
0.85  
0.80  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
TJ = 25ºC  
BVCES  
I C = 50A  
25A  
VGE(  
)
th  
12.5A  
13  
7
9
11  
15  
VGE - Volts  
17  
19  
21  
23  
25  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXBX25N250  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
60  
50  
40  
30  
20  
10  
0
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
0
4.0  
0.6  
0
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
3.0  
40  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
VGE - Volts  
IC - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
VCE = 1kV  
I C = 25A  
I
G = 10mA  
TJ = 25ºC  
6
TJ = 125ºC  
4
2
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.6  
2.8  
VF - Volts  
QG - NanoCoulombs  
Fig. 12. Reverse-Bias Safe Operating Area  
Fig. 11. Capacitance  
10,000  
1,000  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
f
= 1 MHz  
C
ies  
C
oes  
TJ = 125ºC  
RG = 4.7Ω  
C
res  
dv / dt < 10V / ns  
10  
250  
500  
750  
1000  
1250  
1500  
1750  
2000  
2250  
2500  
5
10  
15  
20  
25  
30  
35  
VCE - Volts  
VCE - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXBX25N250  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
800  
700  
600  
500  
400  
300  
200  
100  
800  
700  
600  
500  
400  
300  
200  
100  
0
RG = 4.7Ω, VGE = 15V  
RG = 4.7Ω, VGE = 15V  
VCE = 1250V  
VCE = 1250V  
TJ = 125ºC  
I C = 25A  
I C = 50A  
TJ = 25ºC  
10  
25  
4
15  
20  
25  
30  
IC - Amperes  
35  
40  
45  
50  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
1000  
900  
800  
700  
600  
500  
140  
900  
800  
700  
600  
500  
400  
300  
200  
100  
180  
170  
160  
150  
140  
130  
120  
110  
100  
t f  
t
d(off) - - - -  
tr  
t
d(on) - - - -  
RG = 4.7Ω, VGE = 15V  
TJ = 125ºC, VGE = 15V  
120  
100  
80  
VCE = 1250V  
VCE = 1250V  
I C = 25A, 50A  
I C = 25A  
I C = 50A  
60  
40  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
4
8
12  
16  
20  
24  
28  
32  
36  
40  
44  
48  
52  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
1100  
900  
700  
500  
300  
100  
200  
180  
160  
140  
120  
100  
700  
600  
500  
400  
300  
200  
1000  
800  
600  
400  
200  
0
tf  
td(off  
) - - - -  
t f  
t
d(off) - - - -  
TJ = 125ºC, VGE = 15V  
RG = 4.7Ω, VGE = 15V  
VCE = 1250V  
VCE = 1250V  
I C = 25A  
I C = 50A  
TJ = 125ºC, 25ºC  
8
12  
16  
20  
24  
28  
32  
36  
40  
44  
48  
52  
10  
15  
20  
25  
30  
35  
40  
45  
50  
RG - Ohms  
IC - Amperes  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXBX25N250  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS REF: B_25N250(6P)9-30-08  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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