IXBA12N300HV
IXBT12N300HV
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-263 (HV) Outline
Min.
Typ.
Max.
gfS
IC = 12A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
6.5
10.8
S
Cies
Coes
Cres
1290
56
pF
pF
pF
19
Qg(on)
Qge
62
13
nC
nC
nC
IC = 12A, VGE = 15V, VCE = 1000V
Qgc
8.5
PIN: 1 - Gate
2 - Emitter
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
64
140
180
540
ns
ns
ns
ns
3 - Collector
Resistive Switching Times, TJ = 25°C
IC = 12A, VGE = 15V
VCE = 1250V, RG = 10Ω
65
395
175
530
ns
ns
ns
ns
Resistive Switching Times, TJ = 125°C
IC = 12A, VGE = 15V
VCE = 1250V, RG = 10Ω
RthJC
0.78 °C/W
TO-268 (HV) Outline
Reverse Diode
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
VF
trr
IF = 12A, VGE = 0V
2.1
V
μs
A
PIN:
1 - Gate
2 - Emitter
3 - Collector
1.4
21
IF = 6A, VGE = 0V, -diF/dt = 100A/μs
VR = 100V, VGE = 0V
IRM
Note
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
