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IXFN170N25X3

型号：

IXFN170N25X3

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

154 K

下载PDF手册
Advance Technical Information  
X3-Class HiPerFETTM  
Power MOSFET  
VDSS = 250V  
ID25 = 146A  
RDS(on) 7.4m  
IXFN170N25X3  
D
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
G
S
miniBLOC, SOT-227  
E153432  
S
S
G
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
250  
250  
V
V
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
S
D
D = Drain  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
146  
400  
A
A
G = Gate  
S = Source  
IA  
EAS  
TC = 25C  
TC = 25C  
85  
2.3  
A
J
PD  
TC = 25C  
390  
20  
W
dv/dt  
IS IDM, VDD VDSS, TJ 150°C  
V/ns  
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
International Standard Package  
miniBLOC, with Aluminium Nitride  
Isolation  
Isolation Voltage 2500 V~  
High Current Handling Capability  
Fast Intrinsic Diode  
VISOL  
50/60 Hz, RMS  
IISOL 1mA  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in  
Nm/lb.in  
Avalanche Rated  
Low RDS(on)  
Weight  
30  
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
250  
V
V
Applications  
2.5  
4.5  
Switch-Mode and Resonant-Mode  
100 nA  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
IDSS  
10 A  
1 mA  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 85A, Note 1  
6.1  
7.4 m  
© 2017 IXYS CORPORATION, All Rights Reserved  
DS100825A(4/17)  
IXFN170N25X3  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXFN) Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 60A, Note 1  
Gate Input Resistance  
66  
110  
S
RGi  
1.3  
Ciss  
Coss  
Crss  
13.5  
2.3  
nF  
nF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
1.6  
Effective Output Capacitance  
Co(er)  
Co(tr)  
800  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
3280  
td(on)  
tr  
td(off)  
tf  
18  
10  
62  
7
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 85A  
(M4 screws (4x) supplied)  
V
RG = 5(External)  
Qg(on)  
Qgs  
190  
55  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 85A  
Qgd  
45  
RthJC  
RthCS  
0.32 C/W  
C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
170  
680  
1.4  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
trr  
135  
980  
13  
ns  
nC  
A
IF = 85A, -di/dt = 100A/s  
QRM  
IRM  
VR = 100V, VGS = 0V  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN170N25X3  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
180  
160  
140  
120  
100  
80  
800  
700  
600  
500  
400  
300  
200  
100  
0
V
= 10V  
8V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
6V  
5V  
4V  
7V  
60  
40  
6V  
5V  
20  
0
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 85A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
180  
160  
140  
120  
100  
80  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
6V  
I
= 170A  
D
I
= 85A  
D
5V  
4V  
60  
40  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.5  
1
1.5  
2
2.5  
3
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 85A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
V
= 10V  
GS  
BV  
DSS  
o
T
= 125 C  
J
o
V
GS(th)  
T
= 25 C  
J
BV  
DSS  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
100  
200  
300  
400  
500  
600  
700  
800  
TJ - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXFN170N25X3  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
160  
140  
120  
100  
80  
250  
200  
150  
100  
50  
o
60  
T
J
= 125 C  
o
25 C  
o
40  
- 40 C  
20  
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
240  
200  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
240  
200  
160  
120  
80  
600  
500  
400  
300  
200  
100  
0
o
T
J
= - 40 C  
o
25 C  
o
125 C  
o
T = 25 C  
J
o
T = 125 C  
J
40  
0
0
40  
80  
120  
160  
200  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
VSD - Volts  
ID - Amperes  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
100,000  
10,000  
1,000  
100  
V
I
= 125V  
DS  
= 85A  
C
D
iss  
I
= 10mA  
G
C
oss  
rss  
C
10  
= 1 MHz  
f
1
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
1
10  
100  
1,000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFN170N25X3  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
1000  
100  
10  
24  
20  
16  
12  
8
R
DS(  
on  
Limit  
)
25μs  
100μs  
1ms  
1
o
T = 150 C  
J
4
o
10ms  
DC  
T
= 25 C  
C
Single Pulse  
0
0.1  
0
40  
80  
120  
160  
200  
240  
1
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_170N25X3(28-S301) 4-24-17  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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