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IXBT2N250-TR

型号：

IXBT2N250-TR

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

230 K

下载PDF手册
Preliminary Technical Information  
High Voltage, High Gain  
VCES = 2500V  
IC110 = 2A  
IXBH2N250  
IXBT2N250  
BIMOSFETTM  
VCE(sat) 3.80V  
Monolithic Bipolar MOS  
Transistor  
TO-268 (IXBT)  
G
E
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
C (Tab)  
TC = 25°C to 150°C  
2500  
2500  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1M  
TO-247 (IXBH)  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
IC25  
IC110  
ICM  
TC = 25°C  
5
2
A
A
A
G
TC = 110°C  
TC = 25°C, 1ms  
C
C (Tab)  
E
13  
SSOA  
(RBSOA)  
PC  
VGE = 15V, TVJ = 125°C, RG = 47  
Clamped Inductive Load  
TC = 25°C  
ICM = 6  
VCE  2000  
32  
A
V
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
W
G = Gate  
E = Emitter  
C
= Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Tab = Collector  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
High Blocking Voltage  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in  
Integrated Anti-parallel Diode  
International Standard Packages  
Low Conduction Losses  
Weight  
TO-247  
TO-268  
6
4
g
g
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
Low Gate Drive Requirement  
High Power Density  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVCES  
IC = 250μA, VCE = VGE  
2500  
V
V
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
VCE = 0.8 • VCES, VGE = 0V  
3.0  
5.5  
Applications  
10 A  
TJ = 125C  
TJ = 125C  
100 μA  
Switched-Mode and Resonant-Mode  
Power Supplies  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
Uninterruptible Power Supplies (UPS)  
Laser Generator  
VCE(sat)  
IC = 2A, VGE = 15V, Note 1  
3.15  
4.08  
3.80  
V
V
Capacitor Discharge Circuit  
AC Switches  
© 2017 IXYS CORPORATION, All Rights Reserved  
DS100160A(8/17)  
IXBH2N250  
IXBT2N250  
Symbol  
Test Conditions  
Characteristic Values  
TO-268 Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfS  
IC = 2A, VCE = 10V, Note 1  
0.85  
1.40  
S
Cies  
Coes  
Cres  
145  
8.7  
3.2  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg  
10.6  
0.8  
nC  
nC  
nC  
Qge  
Qgc  
IC = 2A, VGE = 15V, VCE = 1kV  
Pins: 1 - Gate  
2,4 - Collector  
3 - Emitter  
6.2  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
30  
180  
70  
ns  
ns  
ns  
ns  
Resistive Switching times, TJ = 25°C  
IC = 2A, VGE = 15V  
VCE = 2kV, RG = 47  
182  
30  
280  
74  
ns  
ns  
ns  
ns  
Resistive Switching times, TJ = 125°C  
IC = 2A, VGE = 15V  
VCE = 2kV, RG = 47  
178  
RthJC  
RthCS  
3.90 °C/W  
°C/W  
0.21  
TO-247 Outline  
Reverse Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 2A, VGE = 0V, Note 1  
2.4  
V
μs  
A
Pins: 1 - Gate  
2,4 - Collector  
3 - Emitter  
trr  
0.92  
9.80  
4.50  
IF = 2A, VGE = 0V, -diF/dt = 100A/μs  
IRM  
QRM  
VR = 100V, VGE = 0V  
μC  
Note 1. Pulse test, t 300μs, duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXBH2N250  
IXBT2N250  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
28  
24  
20  
16  
12  
8
V
= 25V  
V
= 25V  
GE  
GE  
20V  
15V  
20V  
15V  
10V  
10V  
4
5V  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
0
25  
3
4
8
12  
16  
20  
24  
28  
32  
150  
11  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 25V  
GE  
20V  
15V  
V
= 15V  
GE  
I
= 4A  
C
I
= 2A  
C
10V  
I
= 1A  
C
5V  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
50  
75  
100  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
9
8
7
6
5
4
3
2
1
0
T
J
= 25oC  
T
J
= - 40oC  
25oC  
125oC  
I C = 4A  
2A  
1A  
4
5
6
7
8
9
10  
5
7
9
11  
13  
15  
17  
19  
21  
23  
25  
VGE - Volts  
VGE - Volts  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXBH2N250  
IXBT2N250  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
Fig. 7. Transconductance  
2.4  
2
6
5
4
3
2
1
0
T
J
= - 40oC  
25oC  
1.6  
1.2  
0.8  
0.4  
0
125oC  
T
J
= 25oC  
T
J
= 125oC  
0
1
2
3
4
5
6
7
8
9
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
40  
1
VF - Volts  
IC - Amperes  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
16  
14  
12  
10  
8
1,000  
100  
10  
f = 1 MHz  
V
= 1kV  
CE  
I
I
= 2A  
C
G
= 1mA  
C
ies  
C
C
oes  
6
4
2
res  
0
1
0
1
2
3
4
5
6
7
8
9
10  
11  
0
5
10  
15  
20  
25  
30  
35  
VCE - Volts  
QG - NanoCoulombs  
Fig. 11. Reverse-Bias Safe Operating Area  
Fig. 12. Maximum Transient Thermal Impedance  
7
6
5
4
3
2
1
0
10  
1
0.1  
T
J
= 125oC  
R
G
= 47Ω  
dv / dt < 10V / ns  
0.01  
500  
750  
1000  
1250  
1500  
1750  
2000  
2250  
2500  
0.00001  
0.0001  
0.001  
0.01  
0.1  
VCE - Volts  
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXBH2N250  
IXBT2N250  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time vs.  
Collector Current  
400  
350  
300  
250  
200  
150  
100  
50  
450  
400  
350  
300  
250  
200  
150  
100  
50  
R
= 47Ω, V = 15V  
GE  
G
R
= 47Ω, V = 15V  
GE  
G
V
= 2KV  
CE  
V
= 2KV  
CE  
T = 125oC  
J
I
= 2A  
C
I
= 4A  
C
T = 25oC  
J
0
25  
40  
1.0  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
TJ - Degrees Centigrade  
IC - Amperes  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
320  
280  
240  
200  
160  
120  
80  
120  
110  
100  
90  
600  
550  
500  
450  
400  
350  
300  
250  
200  
150  
65  
t f  
td(off)  
60  
55  
50  
45  
40  
35  
30  
25  
20  
t r  
td(on)  
T = 125oC, V = 15V  
R
G
= 47Ω, V = 15V  
GE  
J
GE  
V
= 2KV  
CE  
V
= 2KV  
CE  
80  
I
= 4A, 2A  
I
I
= 2A  
= 4A  
C
C
C
70  
60  
40  
50  
0
40  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
80  
120  
160  
200  
240  
280  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off Switching Times vs.  
Collector Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
320  
280  
240  
200  
160  
120  
80  
120  
110  
100  
90  
360  
320  
280  
240  
200  
160  
120  
80  
300  
270  
240  
210  
180  
150  
120  
90  
tf  
td(off  
)
tf  
R
td(off)  
T = 125oC, V = 15V  
= 47Ω, V = 15V  
J
GE  
G
GE  
V
= 2KV  
V
= 2KV  
CE  
CE  
I
I
= 2A  
= 4A  
C
C
80  
70  
T = 25oC, 125oC  
60  
J
40  
50  
40  
60  
0
40  
0
30  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
40  
80  
120  
160  
200  
240  
280  
RG - Ohms  
IC - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: B_2N250 (2P) 6-16-09  
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