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IXFH20N85X

型号：

IXFH20N85X

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

297 K

下载PDF手册
X-Class HiPerFETTM  
Power MOSFET  
VDSS = 850V  
ID25 = 20A  
RDS(on) 330m  
IXFA20N85XHV  
IXFP20N85X  
IXFH20N85X  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263HV  
Fast Intrinsic Diode  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-220AB (IXFP)  
TJ = 25C to 150C  
850  
850  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
D (Tab)  
S
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
20  
50  
A
A
TO-247 (IXFH)  
IA  
TC = 25C  
TC = 25C  
10  
A
EAS  
800  
50  
mJ  
V/ns  
W
G
D
S
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
D (Tab)  
540  
G = Gate  
S = Source  
D
= Drain  
TJ  
-55 ... +150  
150  
C  
C  
C  
Tab = Drain  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
High Voltage Package  
Low RDS(ON) and QG  
Avalanche Rated  
Low Package Inductance  
FC  
Md  
Mounting Force (TO-263HV)  
Mounting Torque (TO-220 & TO-247)  
10.65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Weight  
TO-263HV  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
High Power Density  
Easy to Mount  
Space Savings  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 2.5mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
850  
V
3.5  
5.5  
V
Applications  
100 nA  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
IDSS  
25 A  
1.5 mA  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
330 m  
DS100703C(6/16)  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXFA20N85XHV IXFP20N85X  
IXFH20N85X  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
6
10  
S
RGi  
0.8  
Ciss  
Coss  
Crss  
1660  
1730  
24  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
67  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
270  
td(on)  
tr  
td(off)  
tf  
20  
28  
44  
20  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 5(External)  
Qg(on)  
Qgs  
63  
12  
26  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.23 C/W  
TO-220  
TO-247  
0.50  
0.21  
C/W  
C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
20  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
80  
1.4  
V
trr  
QRM  
IRM  
190  
1.6  
16.5  
ns  
IF = 20A, -di/dt = 100A/μs  
μC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFA20N85XHV IXFP20N85X  
IXFH20N85X  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
20  
18  
16  
14  
12  
10  
8
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
GS  
V
= 15V  
GS  
11V  
10V  
9V  
8V  
9V  
6
8V  
7V  
4
7V  
6V  
2
0
0
0
1
2
3
4
5
6
7
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 10A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
20  
18  
16  
14  
12  
10  
8
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
I
= 20A  
D
I
= 10A  
D
7V  
6V  
6
4
2
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
2
4
6
8
10  
12  
14  
16  
18  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 10A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
V
= 10V  
GS  
T
J
= 125ºC  
BV  
DSS  
T
J
= 25ºC  
V
GS(th)  
0
5
10  
15  
20  
25  
30  
35  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXFA20N85XHV IXFP20N85X  
IXFH20N85X  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
24  
20  
16  
12  
8
20  
18  
16  
14  
12  
10  
8
T
J
= 125ºC  
25ºC  
- 40ºC  
6
4
4
2
0
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 9. Transconductance  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
18  
16  
14  
12  
10  
8
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T
J
= - 40ºC  
25ºC  
125ºC  
6
T
J
= 125ºC  
T
J
= 25ºC  
4
2
0
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
ID - Amperes  
VSD - Volts  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
16  
14  
12  
10  
8
10,000  
1,000  
100  
10  
V
= 425V  
DS  
C
C
iss  
I
I
= 10A  
D
G
= 10mA  
oss  
6
4
2
C
= 1 MHz  
rss  
f
1
0
1
10  
100  
1000  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFA20N85XHV IXFP20N85X  
IXFH20N85X  
Fig. 14. Forward-Bias Safe Operating Area  
Fig. 13. Output Capacitance Stored Energy  
100  
10  
25  
20  
15  
10  
5
R
Limit  
)
DS(  
on  
25µs  
100µs  
1
1ms  
0.1  
0.01  
T
J
= 150ºC  
= 25ºC  
10ms  
T
C
DC  
Single Pulse  
0
10  
100  
1,000  
0
100  
200  
300  
400  
500  
600  
700  
800  
900  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXFA20N85XHV IXFP20N85X  
IXFH20N85X  
TO-263HV Outline  
1 = Gate  
2 = Source  
3 = Drain  
TO-247 Outline  
TO-220 Outline  
E
A
R
A2  
0P  
U
E2/2  
Q
A
A1  
E
0P  
S
E2  
D
H1  
Q
T
4
(D2)  
(E1)  
D
1
2
3
D1  
4
L1  
1
2
3
L
A2  
EJECTOR  
PIN  
L1  
L
b2  
b
c
b4  
A1  
e
1 = Gate  
c
3X  
b
e
2,4 = Drain  
3 = Source  
e1  
3X b2  
W
BOTTOM FLATNESS  
1 = Gate  
2,4 = Drain  
3 = Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_20N85X(S5-D901) 2-09-16  
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