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IXFN70N120SK

型号：

IXFN70N120SK

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

432 K

下载PDF手册
IXFN70N120SK  
preliminary  
ID25  
VDSS  
RDS(on) max  
=
68 A  
= 1200 V  
34 mΩ  
SiC Power MOSFET  
=
Kelvin Source gate connection  
KS  
Part number  
IXFN70N120SK  
Backside: isolated  
UL pending  
D (3)  
G (2)  
KS (1)  
S (4)  
Features / Advantages:  
Applications:  
• Solar inverters  
• High voltage DC/DC converters  
• Motor drives  
• Switch mode power supplies  
• UPS  
• Battery chargers  
Package: SOT-227B (minibloc)  
• High speed switching  
with low capacitances  
• High blocking voltage  
with low RDS(on)  
• Easy to parallel and simple to drive  
• Resistant to latch-up  
• Real Kelvin source connection  
• Isolation Voltage: 3000 V~  
• Industry standard outline  
• RoHS compliant  
• Epoxy meets UL 94V-0  
• BaseplatewithAluminiumnitride  
isolation  
• Induction heating  
• Advanced power cycling  
Terms & Conditions of usage  
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of  
the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly  
notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales  
office.  
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.  
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend  
- to perform joint risk and quality assessments;  
- the conclusion of quality agreements;  
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.  
IXYS reserves the right to change limits, test conditions and dimensions.  
20180405a  
© 2018 IXYS All rights reserved  
1 - 7  
IXFN70N120SK  
preliminary  
MOSFET  
Ratings  
min. typ. max.  
1200  
Symbol Definitions  
Conditions  
drain source breakdown voltage  
VDSS  
VGS = 0 V, ID = 100 µA  
V
max transient gate source voltage  
continous gate source voltage  
VGSM  
VGS  
-10  
-5  
+25  
+20  
V
V
recommended operational value  
VGS = 20 V  
drain current  
ID25  
ID80  
ID100  
TC = 25°C  
TC = 80°C  
TC = 100°C  
68  
55  
48  
A
A
A
static drain source on resistance  
gate threshold voltage  
RDSon  
ID = 50 A; VGS = 20 V  
ID = 15 mA; VGS = VDS  
TVJ = 25°C  
TVJ = 175°C  
25  
52  
34  
mΩ  
mΩ  
VGS(th)  
TVJ = 25°C  
TVJ = 175°C  
2.0  
2.6  
2.1  
4.0  
V
V
drain source leakage current  
gate source leakage current  
internal gate resistance  
IDSS  
IGSS  
RG  
VDS = 1200 V; VGS = 0 V  
TVJ = 25°C  
TVJ = 25°C  
2
100  
0.6  
µA  
µA  
Ω
VDS = 0 V; VGS = 20 V  
f = 1 MHz, VAC = 25 mV, ESR of CISS  
1.1  
input capacitance  
output capacitance  
reverse transfer (Miller) capacitance  
Ciss  
Coss  
Crss  
2790  
220  
15  
pF  
pF  
pF  
VDS = 1000 V; VGS = 0 V; f = 1 MHz TVJ = 25°C  
VDS = 800 V; ID = 50 A; VGS = -5/20 V TVJ = 25°C  
total gate charge  
gate source charge  
gate drain (Miller) charge  
Qg  
Qgs  
Qgd  
161  
46  
50  
nC  
nC  
nC  
turn-on delay time  
current rise time  
turn-off delay time  
current fall time  
turn-on energy per pulse  
turn-off energy per pulse  
reverse recovery losses at turn-off  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
Erec(off)  
30  
15  
82  
ns  
ns  
ns  
Inductive switching  
VDS = 800 V; ID = 50 A  
VGS = -5 / 20 V; RG = 15 Ω (external)  
Freewheeling diode is Mosfet's body diode  
TVJ = 25°C  
27  
ns  
1.35  
0.76  
0.13  
mJ  
mJ  
mJ  
turn-on delay time  
current rise time  
turn-off delay time  
current fall time  
turn-on energy per pulse  
turn-off energy per pulse  
reverse recovery losses at turn-off  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
Erec(off)  
28  
12  
125  
28  
1.71  
0.78  
0.29  
ns  
ns  
ns  
Inductive switching  
VDS = 800 V; ID = 50 A  
VGS = -5 / 20 V; RG = 15 Ω (external)  
Freewheeling diode is Mosfet's body diode  
TVJ = 150°C  
ns  
mJ  
mJ  
mJ  
thermal resistance junction to case  
thermal resistance junction to heatsink  
RthJC  
RthJH  
0.45  
K/W  
K/W  
with heatsink compound; IXYS test setup  
0.6  
Source-Drain Diode  
Symbol Definitions  
Ratings  
Conditions  
min. typ. max.  
forward voltage drop  
VSD  
IF = 50 A; VGS = -5 V  
TVJ = 25°C  
TVJ = 150°C  
4.3  
3.7  
V
V
reverse recovery time  
trr  
QRM  
IRM  
35  
0.52  
33  
ns  
µC  
A
VGS = -5 V; IF = 50 A; VR = 800 V  
Mosfet gate drive:  
VGS = -5 / 20 V; RG = 15 Ω  
TVJ = 25°C  
reverse recovery charge (intrinsic diode)  
max. reverse recovery current  
current slew rate  
dIF/dt  
3380  
A/µs  
reverse recovery time  
trr  
QRM  
IRM  
30  
1.23  
59  
ns  
µC  
A
VGS = -5 V; IF = 50 A; VR = 800 V  
Mosfet gate drive:  
VGS = -5 / 20 V; RG = 15 Ω  
TVJ = 150°C  
reverse recovery charge (intrinsic diode)  
max. reverse recovery current  
current slew rate  
dIF/dt  
4250  
A/µs  
Note:  
When using SiC Body Diode the maximum recommended VGS = -5V  
IXYS reserves the right to change limits, test conditions and dimensions.  
20180405a  
© 2018 IXYS All rights reserved  
2 - 7  
IXFN70N120SK  
preliminary  
Package SOT-227B (minibloc)  
Ratings  
Symbol  
IRMS  
Definitions  
Conditions  
min.  
typ. max. Unit  
RMS current  
per terminal  
A
storage temperature  
operation temperature  
virtual junction temperature  
Tstg  
Top  
TVJ  
-40  
-40  
-40  
150  
150  
175  
°C  
°C  
°C  
Weight  
MD  
30  
g
Nm  
Nm  
mounting torque  
terminal torque  
1.1  
1.1  
1.5  
1.5  
MT  
dSpp/App  
dSpb/Apb  
terminal to backside  
terminal to terminal  
10.5 / 3.2  
8.6 / 6.8  
mm  
mm  
creepage distance on surface | striking distance through air  
isolation voltage  
VISOL  
IISOL < 1 mA; 50/60 Hz, t = 1 sec.  
t = 1 minute  
3000  
2500  
V
V
Product Marking  
Part No.  
Logo  
XXXXX  
®
yywwZ  
abcd  
DateCode  
Assembly Line Assembly Code  
Ordering  
Part Name  
Marking on Product Delivering Mode Base Qty Ordering Code  
IXFN70N120SK Tube 10 517981  
Standard  
IXFN70N120SK  
IXYS reserves the right to change limits, test conditions and dimensions.  
20180405a  
© 2018 IXYS All rights reserved  
3 - 7  
IXFN70N120SK  
preliminary  
Outlines SOT-227B (minibloc)  
D (3)  
G (2)  
KS (1)  
S (4)  
IXYS reserves the right to change limits, test conditions and dimensions.  
20180405a  
© 2018 IXYS All rights reserved  
4 - 7  
IXFN70N120SK  
preliminary  
Curves  
150  
150  
100  
50  
20 V  
18 V  
16 V  
14 V  
12 V  
20 V  
18 V  
16 V  
14 V  
12 V  
100  
50  
0
VGS = 10 V  
ID  
ID  
VGS = 10 V  
[A]  
[A]  
TVJ = 25°C  
TVJ = -25°C  
0
0
1
2
3
4
5
6
7
8
9
10  
0
1
2
3
4
5
6
7
8
9
10  
VDS [V]  
VDS [V]  
Fig. 1 Typical output characteristics (-25°C)  
Fig. 2 Typical output characteristics (25°C)  
150  
100  
50  
2.5  
2.0  
1.5  
VGS = 20 V  
20 V  
TVJ = 150°C  
18 V  
16 V  
14 V  
100 A  
12 V  
ID = 50 A  
VGS = 10 V  
ID  
RDS(on)  
normalized  
[A]  
1.0  
0.5  
0
0.0  
0
1
2
3
4
5
6
7
8
9
10  
-25  
0
25  
50  
75 100 125 150 175  
TVJ [°C]  
VDS [V]  
Fig. 4 RDS(on) normalized vs. junction temperature TVJ  
Fig. 3 Typical output characteristics (150°C)  
VGS = 20 V  
80  
60  
80  
60  
40  
ID = 50 A  
TVJ = 150°C  
VGS = 14 V  
RDS(on)  
40  
RDS(on)  
16 V  
18 V  
20 V  
[mOhm]  
[mOhm]  
25°C  
-25°C  
20  
20  
0
0
0
25  
50  
75  
100  
125  
150  
-25  
0
25  
50  
75 100 125 150 175  
TVJ [°C]  
Fig. 6 RDS(on) versus junction temperature TVJ  
IDS [A]  
Fig. 5 RDS(on) versus drain current  
IXYS reserves the right to change limits, test conditions and dimensions.  
20180405a  
© 2018 IXYS All rights reserved  
5 - 7  
IXFN70N120SK  
preliminary  
Curves  
1.4  
1.2  
3.2  
3.0  
2.8  
2.6  
150  
100  
50  
VDS = 20 V  
VDSS  
TVJ = 150°C  
IDSS  
=
VDSS  
1.0  
VTH  
ID  
0.1 mA  
2.4  
2.2  
2.0  
1.8  
1.6  
[A]  
[V]  
normalized  
25°C  
-55°C  
0.8  
VTH  
IDSS  
=
15 mA  
0.6  
0
-25  
0
25  
50  
75 100 125 150 175  
0
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15  
TVJ [°C]  
VGS [V]  
Fig. 7 Norm. breakdow VDSS & treshhold voltage VTH  
versus junction temperature TVJ  
Fig. 8 Typical transfer characteristics  
TVJ = -25°C  
50  
40  
0
-25  
TVJ = -25°C  
25°C  
150°C  
-50  
30  
gfs  
IDS  
-5 V  
-2 V  
-75  
[S]  
[V]  
20  
VGS = 0 V  
-100  
-125  
-150  
10  
0
0
10 20 30 40 50 60 70 80 90 100  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
ID [A]  
VDS [V]  
Fig. 10 Forward voltage drop of intrinsic diode  
versus VDS measured at -55°C  
Fig. 9 Typical forward transconductance  
TVJ = 25°C  
0
-25  
0
TVJ = 150°C  
-25  
-5 V  
-2 V  
-50  
-50  
IDS  
IDS  
-5 V  
-2 V  
-75  
-75  
VGS = 0 V  
[V]  
[V]  
VGS = 0 V  
-100  
-125  
-150  
-100  
-125  
-150  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
VDS [V]  
VDS [V]  
Fig. 11 Forward voltage drop of intrinsic diode  
versus VDS measured at 25°C  
Fig. 12 Forward voltage drop of intrinsic diode  
versus VDS measured at 150°C  
IXYS reserves the right to change limits, test conditions and dimensions.  
20180405a  
© 2018 IXYS All rights reserved  
6 - 7  
IXFN70N120SK  
preliminary  
Curves  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
5
4
3
2
1
0
RG  
=
15 Ω  
800 V  
RG  
=
15 Ω  
150°C  
800 V  
VDS  
=
TVJ  
VDS  
=
VGS = -5/20 V  
ID 50 A  
=
=
VGS = -5/20 V  
E
recx10  
Eon  
E
E
E
rec x10  
[mJ]  
[mJ]  
Eoff  
Eon  
Eoff  
20  
40  
60  
80  
100  
120  
140  
160  
0
10 20 30 40 50 60 70 80 90 100  
ID [A]  
TVJ [°C]  
Fig. 13 Typical switching energy  
versus drain current  
Fig. 14 Typical switching energy  
versus temperature  
240  
200  
160  
120  
80  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
ID  
TVJ = 150°C  
VDS 800 V  
GS = -5/20 V  
=
50 A  
ID  
TVJ = 150°C  
VDS 800 V  
GS = -5/20 V  
=
50 A  
Eon  
=
=
V
V
t
E
Eoff  
td(off)  
[ns]  
[mJ]  
td(on)  
tf  
40  
Erec  
tr  
0
6
12  
18  
24  
RG [Ω]  
30  
36  
6
12  
18  
24  
RG [Ω]  
30  
36  
Fig. 15 Typical switching energy versus  
external gate resistor  
Fig. 16 Typical switching time versus  
external gate resistor  
20  
15  
10  
5
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
ID  
=
=
40 A  
25°C  
TVJ  
V
DS = 800 V  
IGS = 10 mA  
VGS  
[V]  
Zth(J-H)  
[K/W]  
0
-5  
0
20 40 60 80 100 120 140 160 180  
1
10  
100  
1000  
10000  
QG [nC]  
tp [ms]  
Fig. 17 Typical turn on gate charge, trendline  
Fig. 18 Typical transient thermal impedance  
IXYS reserves the right to change limits, test conditions and dimensions.  
20180405a  
© 2018 IXYS All rights reserved  
7 - 7  
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