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IXA20PG1200DHGLB

型号：

IXA20PG1200DHGLB

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

192 K

下载PDF手册
Advanced Technical Information  
IXA 20PG1200DHGLB  
IC25  
VCES  
VCE(sat) typ = 1.8V  
= 32A  
=1200V  
XPT IGBT phaseleg  
ISOPLUS™  
Surface Mount Power Device  
7
D3  
D4  
6
1
D1  
D2  
S1  
4
5
9
S2  
3
2
E72873  
8
Features  
IGBTs S1, S2  
• XPT IGBT  
- low saturation voltage  
- positive temperature coefficient for  
easy paralleling  
- fast switching  
- short tail current for optimized  
performance in resonant circuits  
• Sonic™ diode  
- fast reverse recovery  
- low operating forward voltage  
- low leakage current  
• VCEsat detection diode  
- integrated into package  
- very fast diode  
Symbol  
VCES  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
1200  
20  
V
VGES  
V
IC25  
IC80  
TC = 25°C  
TC = 80°C  
32  
23  
A
A
ICM  
VCEK  
VGE = 15 V; RG = 56 W; TVJ = 125°C  
RBSOA, clamped inductive load; L = 100 µH  
45  
VCES  
A
µs  
W
tSC  
VCE = 900 V; VGE = 15 V; RG = 56 W; TVJ = 125°C  
10  
(SCSOA) none repetitive  
Ptot  
TC = 25°C  
130  
• Package  
Symbol  
Conditions  
Characteristic  
Values  
- isolated back surface  
- low coupling capacity between pins  
and heatsink  
(TVJ = 25°C, unless otherwise specified)  
- PCB space saving  
min. typ. max.  
- enlarged creepage towards heatsink  
- application friendly pinout  
- low inductive current path  
- high reliability  
VCE(sat)  
IC = 15 A; VGE = 15 V; TVJ = 25°C  
VJ = 125°C  
1.8  
2.1  
2.1  
V
V
T
VGE(th)  
ICES  
IC = 0.6 mA; VGE = VCE  
VCE = VCES; VGE = 0 V; TVJ = 25°C  
VJ = 125°C  
5.4  
6.5  
V
125  
µA  
µA  
Applications  
T
250  
• Phaseleg  
- buck-boost chopper  
IGES  
VCE = 0 V; VGE  
=
20 V  
500  
nA  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
E(rec)off  
70  
40  
250  
100  
1.55  
1.7  
ns  
ns  
ns  
ns  
mJ  
mJ  
• Full bridge  
- power supplies  
- induction heating  
- four quadrant DC drives  
- controlled rectifier  
• Three phase bridge  
- AC drives  
Inductive load; TVJ = 125°C  
VCE = 600 V; IC = 15 A  
VGE = 15 V; RG = 56 W  
- controlled rectifier  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 600 V; VGE = 15 V; IC = 15 A  
tbd  
48  
pF  
nC  
RthJC  
RthJH  
1.0 K/W  
1.7 K/W  
with heatsink compound (IXYS test setup)  
1.35  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2012 IXYS All rights reserved  
20120131b  
1 - 5  
Advanced Technical Information  
IXA 20PG1200DHGLB  
Diodes D1, D2  
Equivalent Circuits for Simulation  
Conduction  
Symbol  
Conditions  
Maximum Ratings  
IF25  
IF80  
TC = 25°C  
TC = 80°C  
27  
18  
A
A
I
R0  
Symbol  
Conditions  
Characteristic Values  
V0  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ.  
max.  
IGBTs (typ. at VGE =15 V; TJ =125°C)  
S1, S2 V0 = 1.1 V; R0 = 90 mW  
VF  
IF = 20 A  
TVJ = 25°C  
TVJ = 125°C  
2.0  
2.0  
2.3  
V
V
IRM  
trr  
Erec  
20  
350  
tbd  
A
ns  
mJ  
IF = 20 A; RG = 56 W; TVJ = 125°C  
VR = 600 V; VGE = -15 V  
Diodes (typ. at TJ = 125°C)  
D1, D2 V0 = 1.3 V; R0 = 41 mW  
RthJC  
RthJH  
per diode  
1.35 K/W  
2.2 K/W  
with heatsink compound (IXYS test setup)  
1.75  
Diodes D3, D4  
Symbol  
VR  
Conditions  
Maximum Ratings  
1200  
TC = 25°C to 150°C  
V
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ.  
max.  
VF  
IR  
IF = 1 A  
TVJ = 25°C  
TVJ = 125°C  
1.7  
1.5  
2.2  
V
V
VR = 1200 V  
TVJ = 25°C  
TVJ = 125°C  
2
µA  
µA  
30  
IRM  
trr  
IF = 1 A; diF /dt = -100 A/µs; TVJ = 25°C  
VR = 100 V; VGE = 0 V  
2.3  
40  
A
ns  
Component  
Symbol  
Conditions  
Maximum Ratings  
TVJ  
Tstg  
-55...+150  
-55...+125  
°C  
°C  
V~  
N
VISOL  
FC  
IISOL < 1 mA; 50/60 Hz  
mounting force  
2500  
40 ... 130  
Symbol  
CP  
Conditions  
Characteristic Values  
min. typ. max.  
coupling capacity between shorted  
pins and backside metal  
90  
pF  
dS, dA  
dS, dA  
pin - pin  
pin - backside metal  
1.65  
4
mm  
mm  
CTI  
400  
Weight  
8
g
Delivering Base Ordering  
Ordering  
Ordering Name  
Marking on Product  
Mode  
Qty  
Code  
Standard  
IXA20PG1200DHGLB  
IXA20PG1200DHGLB Tape&Reel 200  
tbd  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2012 IXYS All rights reserved  
20120131b  
2 - 5  
Advanced Technical Information  
IXA 20PG1200DHGLB  
Dimensions in mm (1 mm = 0.0394“)  
(6x) 1 0,05 2)  
0 +0,15  
0,1  
A (8 : 1)  
25 0,2 1)  
18 0,1  
9 0,1  
seating plane  
0,5 0,1  
(3x) 2 0,05 2)  
4 0,05  
A
3)  
0,05  
Notes:  
2,75 0,1  
5,5 0,1  
1) potrusion may add 0.2 mm max. on each side  
2) additional max. 0.05 mm per side by punching misalignement  
or overlap of dam bar or bending compression  
3) DCB area 10 to 50 µm convex;  
13,5 0,1  
position of DCB area in relation to plastic rim: 25 µm  
(measured 2 mm from Cu rim)  
16,25 0,1  
4) terminal plating: 0.2 - 1 µm Ni + 10 - 25 µm Sn (gal v.)  
cutting edges may be partially free of plating  
19 0,1  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2012 IXYS All rights reserved  
20120131b  
3 - 5  
Advanced Technical Information  
IXA 20PG1200DHGLB  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
13 V  
VGE = 15 V  
11 V  
VGE = 15 V  
17 V  
19 V  
T
VJ = 125°C  
TVJ = 25°C  
IC  
IC  
TVJ = 125°C  
[A]  
[A]  
9 V  
0
0
0
1
2
3
0
1
2
3
4
5
VCE [V]  
VCE [V]  
Fig. 1 Typ. output characteristics  
Fig. 2 Typ. output characteristics  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
IC  
= 15 A  
VCE = 600 V  
IC  
VGE  
[A]  
[V]  
TVJ = 125°C  
TVJ = 25°C  
0
0
0
10  
20  
30  
40  
50  
60  
5
6
7
8
9
10 11 12 13  
QG [nC]  
VGE [V]  
Fig. 3 Typ. tranfer characteristics  
Fig. 4 Typ. turn-on gate charge  
4
3
2
2.8  
2.4  
2.0  
1.6  
1.2  
RG = 56 W  
VCE = 600 V  
IC =  
VCE = 600 V  
VGE 15 V  
15 A  
Eon  
Eoff  
VGE  
= 15 V  
=
TVJ = 125°C  
TVJ = 125°C  
E
E
[mJ]  
[mJ]  
Eoff  
Eon  
1
0
0
5
10 15 20 25 30 35  
40  
60  
80 100 120 140 160  
IC [A]  
RG [W]  
Fig. 5 Typ. switching energy vs. collector current  
Fig. 6 Typ. switching energy vs. gate resistance  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2012 IXYS All rights reserved  
20120131b  
4 - 5  
Advanced Technical Information  
IXA 20PG1200DHGLB  
40  
30  
20  
10  
0
5
4
TVJ = 125°C  
VR = 600 V  
40 A  
20 A  
IF  
Qrr  
3
[A]  
[µC]  
TVJ = 125°C  
2
TVJ  
=
25°C  
10 A  
1
200  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
300  
400  
500  
600  
700  
VF [V]  
diF /dt [A/µs]  
Fig. 7 Typ. Forward current versus VF  
Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt  
35  
30  
25  
20  
15  
10  
5
700  
600  
500  
400  
300  
200  
100  
0
40 A  
TVJ = 125°C  
VR = 600 V  
TVJ = 125°C  
VR = 600 V  
20 A  
10 A  
IRRM  
trr  
40 A  
[A]  
[ns]  
20 A  
10 A  
0
200  
300  
400  
500  
600  
700  
200  
300  
400  
500  
600  
700  
diF /dt [A/µs]  
diF /dt [A/µs]  
Fig. 9 Typ. peak reverse current IRM vs. di/dt  
Fig. 10 Typ. recovery time trr versus di/dt  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
10  
1
TVJ = 125°C  
VR = 600 V  
Diode  
40 A  
20 A  
IGBT  
Erec  
ZthJC  
[mJ]  
[K/W]  
0.1  
10 A  
0.01  
0.001  
200  
300  
400  
diF /dt [A/µs]  
Fig. 11 Typ. recovery energy Erec versus di/dt  
500  
600  
700  
0.01  
0.1  
tp [s]  
1
10  
Fig. 12 Typ. transient thermal impedance  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2012 IXYS All rights reserved  
20120131b  
5 - 5  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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