IXFA 4N100Q
IXFP 4N100Q
TO-220(IXFP)Outline
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 20 V; ID = 0.5 • ID25, pulse test
1.5
2.5
S
Ciss
Coss
Crss
1050
120
30
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
17
15
32
18
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 4.7 Ω (External),
Pins: 1 - Gate
3 - Source
2 - Drain
Qg(on)
Qgs
Qgd
39
9
22
nC
nC
nC
4 - Drain
Bottom Side
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCK
0.8
K/W
K/W
(TO-220)
0.25
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
IS
TestConditions
VGS = 0 V
4
16
A
ISM
Repetitive; pulse width limited by TJM
A
V
TO-263(IXFA)Outline
VSD
IF = I , VGS = 0 V,
1.5
PulsSe test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
QRM
IRM
250
ns
µC
A
IF = IS, -di/dt = 100 A/µs, VR = 100 V
0.52
1.8
1. Gate
2. Drain
3. Source
4. Drain
BottomSide
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
L1
L2
L3
L4
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
