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IXBT16N360HV

型号：

IXBT16N360HV

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

269 K

下载PDF手册
Advance Technical Information  
High Voltage, High Gain  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
VCES = 3600V  
IC110 = 16A  
VCE(sat) 3.0V  
IXBT16N360HV  
IXBH16N360HV  
TO-268HV (IXBT)  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
G
TJ = 25°C to 150°C  
3600  
3600  
V
V
E
C (Tab)  
VCGR  
TJ = 25°C to 150°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
TO-247HV (IXBH)  
IC25  
IC110  
ICM  
TC = 25°C  
48  
16  
72  
A
A
A
TC = 110°C  
TC = 25°C, 1ms  
G
E
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 25  
Clamped Inductive Load  
ICM = 60  
VCES 1500  
A
V
C (Tab)  
C
TSC  
(SCSOA)  
VGE = 15V, TJ = 125°C,  
RG = 82, VCE =1500V, Non-Repetitive  
G = Gate  
E = Emitter  
C
= Collector  
10  
μs  
Tab = Collector  
PC  
TC = 25°C  
270  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
High Voltage Packages  
High Blocking Voltage  
Md  
Mounting Torque (TO-247HV)  
1.13/10  
Nm/lb.in  
High Peak Current Capability  
Low Saturation Voltage  
Weight  
TO-268HV  
TO-247HV  
4
6
g
g
Advantages  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Low Gate Drive Requirement  
High Power Density  
Min.  
3600  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
5.0  
Applications  
10 μA  
500 μA  
TJ = 125°C  
TJ = 125°C  
Switch-Mode and Resonant-Mode  
Power Supplies  
Uninterruptible Power Supplies (UPS)  
Laser Generators  
Capacitor Discharge Circuits  
AC Switches  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = 16A, VGE = 15V, Note 1  
2.5  
3.1  
3.0  
V
V
© 2018 IXYS CORPORATION, All Rights Reserved  
DS100886A(1/18)  
1
IXBT16N360HV  
IXBH16N360HV  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-268HV Outline  
Min.  
Typ.  
Max.  
E
A
E1  
L2  
C2  
gfs  
IC = 16A, VCE = 10V, Note 1  
7
12  
S
3
D1  
3
D
H
D2  
Cies  
Coes  
Cres  
1116  
60  
pF  
pF  
pF  
1
2
D3  
2
1
VCE = 25V, VGE = 0V, f = 1MHz  
A1  
L4  
C
e
e
b
25  
Qg(on)  
Qge  
Qgc  
65  
7
nC  
nC  
nC  
PINS:  
1 - Gate 2 - Emitter  
3 - Collector  
IC = 16A, VGE = 15V, VCE = 1.5KV  
30  
L3  
A2  
td(on)  
tr  
td(off)  
tf  
30  
ns  
ns  
Resistive load, TJ = 25°C  
L
260  
IC = 16A, VGE = 15V  
184  
110  
ns  
ns  
VCE = 1.5KV, RG = 25  
td(on)  
tr  
td(off)  
tf  
36  
ns  
ns  
Resistive load, TJ = 125°C  
385  
IC = 16A, VGE = 15V  
190  
115  
ns  
ns  
VCE = 1.5KV, RG = 25  
RthJC  
RthCS  
0.46 °C/W  
°C/W  
TO-247HV  
0.21  
Reverse Diode  
TO-247HV Outline  
E1  
E
A
R
0P  
0P1  
A2  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Q
S
Min.  
Typ.  
Max  
D1  
D2  
D
4
VF  
IF = 16A, VGE = 0V, Note 1  
3.5  
V
trr  
620  
21.5  
6.7  
ns  
A
1
2
3
IF = 16A, VGE = 0V, -diF/dt = 100A/μs  
L1  
A3  
2X  
D3  
E2  
E3  
4X  
IRM  
QRM  
A1  
VR = 100V, VGE = 0V  
L
μC  
e
b
b1  
c
e1  
3X  
3X  
PINS:  
1 - Gate 2 - Emitter  
3, 4 - Collector  
Note: 1. Pulse test, t 300μs, duty cycle, d 2%.  
ADVANCETECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications offered  
are derived from a subjective evaluation of the design, based upon prior knowledge and  
experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves  
the right to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXBT16N360HV  
IXBH16N360HV  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
32  
28  
24  
20  
16  
12  
8
180  
160  
140  
120  
100  
80  
V
= 21V  
GE  
V
= 21V  
GE  
17V  
15V  
13V  
11V  
19V  
17V  
9V  
7V  
15V  
13V  
60  
11V  
9V  
40  
4
20  
7V  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
-50  
3
5
10  
15  
20  
25  
30  
150  
10  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
32  
28  
24  
20  
16  
12  
8
V
= 21V  
GE  
V
= 15V  
GE  
17V  
15V  
13V  
11V  
9V  
I
= 32A  
C
I
= 16A  
C
7V  
5V  
4
I
= 8A  
C
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
-25  
0
25  
50  
75  
100  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T
J
= 25oC  
V
= 10V  
DS  
T
= - 40oC  
J
25oC  
125oC  
I C = 32A  
16A  
8A  
0
4
5
6
7
8
9
5
10  
15  
20  
25  
VGE - Volts  
VGE - Volts  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXBT16N360HV  
IXBH16N360HV  
Fig. 7. Transconductance  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
18  
16  
14  
12  
10  
8
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= - 40oC  
V
= 10V  
DS  
25oC  
125oC  
T = 25oC  
J
6
T
J
= 125oC  
4
2
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
VF - Volts  
IC - Amperes  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
16  
14  
12  
10  
8
10,000  
1,000  
100  
f
= 1 MHz  
V
= 1.5kV  
CE  
I
I
= 16A  
C
G
= 10mA  
C
C
ies  
6
oes  
4
2
C
res  
0
10  
0
10  
20  
30  
40  
50  
60  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Reverse-Bias Safe Operating Area  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1
0.1  
0.01  
T
= 125oC  
J
R
= 25Ω  
G
dv / dt < 10V / ns  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
400  
800  
1200  
1600  
2000  
2400  
2800  
3200  
3600  
VCE - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXBT16N360HV  
IXBH16N360HV  
Fig. 14. Resistive Turn-on Rise Time vs.  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Collector Current  
600  
500  
400  
300  
200  
100  
500  
450  
400  
350  
300  
250  
200  
R
= 25Ω, V = 15V  
GE  
G
R
= 25Ω, V = 15V  
GE  
G
V
= 1500V  
CE  
V
= 1500V  
CE  
T = 125oC  
J
I
= 32A  
C
I
= 16A  
C
T = 25oC  
J
8
25  
20  
12  
16  
20  
24  
28  
32  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IC - Amperes  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
800  
700  
600  
500  
400  
300  
200  
118  
116  
114  
112  
110  
108  
106  
210  
200  
190  
180  
170  
160  
150  
t f  
R
G
td(off)  
t r  
td(on)  
T = 125oC, V = 15V  
GE  
= 25Ω, V = 15V  
J
GE  
160  
120  
80  
V = 1500V  
CE  
V
= 1500V  
CE  
I
= 16A  
I
= 32A  
C
C
I
= 16A  
I
= 32A  
C
C
40  
0
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times vs.  
Collector Current  
400  
350  
300  
250  
200  
150  
100  
50  
900  
122  
120  
118  
116  
114  
112  
110  
108  
106  
220  
210  
200  
190  
180  
170  
160  
150  
140  
t f  
R
td(off)  
tf  
td(off  
)
800  
700  
600  
500  
400  
300  
200  
100  
T = 125oC, V = 15V  
= 25Ω, V = 15V  
GE  
G
J
GE  
V
= 1500V  
CE  
V
= 1500V  
CE  
I
= 32A  
C
T = 125oC  
J
I
= 16A  
C
T = 25oC  
J
0
8
12  
16  
20  
24  
28  
32  
40  
60  
80  
100  
120  
140  
160  
RG - Ohms  
IC - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXBT16N360HV  
IXBH16N360HV  
Fig. 19. Forward-Bias Safe Operating Area @ T = 25oC  
Fig. 20. Forward-Bias Safe Operating Area @ T = 75oC  
C
C
100  
10  
100  
10  
V
Limit  
V
Limit  
CE(sat)  
CE(sat)  
25μs  
25μs  
100μs  
100μs  
1
1
1ms  
1ms  
0.1  
0.01  
0.1  
0.01  
T = 150oC  
J
T = 150oC  
J
10ms  
= 25oC  
T
= 75oC  
10ms  
T
C
C
100ms  
DC  
Single Pulse  
Single Pulse  
10  
100ms  
DC  
1
10  
100  
1,000  
10,000  
1
100  
1,000  
10,000  
VCE - Volts  
VCE - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS REF: B_16N360(H6-B8)1-11-18-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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