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IXBH14N300HV

型号：

IXBH14N300HV

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

359 K

下载PDF手册
High Voltage, High Gain  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
VCES = 3000V  
IC110 = 14A  
VCE(sat) 2.7V  
IXBA14N300HV  
IXBT14N300HV  
IXBH14N300HV  
TO-263HV (IXBA)  
G
E
C (Tab)  
Symbol  
Test Conditions  
Maximum Ratings  
TO-268HV (IXBT)  
VCES  
VCGR  
TC = 25°C to 150°C  
3000  
3000  
V
V
TJ = 25°C to 150°C, RGE = 1M  
G
E
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
C ((Tab)  
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
38  
14  
120  
A
A
A
TO-247HV (IXBH)  
SSOA  
(RBSOA)  
V
GE = 15V, TVJ = 125°C, RG = 20  
ICM = 120  
1500  
A
V
Clamped Inductive Load  
TSC  
VGE = 15V, TJ = 125°C,  
(SCSOA)  
RG = 82, VCE =1500V, Non-Repetitive  
10  
μs  
G
E
PC  
TC = 25°C  
200  
W
C (Tab)  
C
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
C
= Collector  
TJM  
Tstg  
E = Emitter  
Tab = Collector  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
FC  
Mounting Force (TO-263HV)  
Mounting Torque (TO-247HV)  
10..65 / 22..14.6  
1.13/10  
N/lb  
High Voltage Packages  
High Blocking Voltage  
Md  
Nm/lb.in  
Weight  
TO-263HV  
TO-268HV  
TO-247HV  
2.5  
4.0  
6.0  
g
g
g
Anti-Parallel Diode  
Low Conduction Losses  
Advantages  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
3000  
3.0  
Typ.  
Max.  
Low Gate Drive Requirement  
High Power Density  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
V
V
5.0  
Applications  
ICES  
VCE = 0.8 • VCES, VGE = 0V  
25 μA  
750 μA  
TJ = 125°C  
TJ = 125°C  
Switch-Mode and Resonant-Mode  
Power Supplies  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
Uninterruptible Power Supplies (UPS)  
Laser Generators  
VCE(sat)  
IC = 14A, VGE = 15V, Note 1  
2.2  
2.7  
2.7  
V
V
Capacitor Discharge Circuits  
AC Switches  
© 2016 IXYS CORPORATION, All Rights Reserved  
DS100613B(03/16)  
IXBA14N300HV IXBT14N300HV  
IXBH14N300HV  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfS  
IC = 14A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
8
13  
S
Cies  
Coes  
Cres  
1275  
50  
pF  
pF  
pF  
18  
Qg  
62  
7
nC  
nC  
nC  
Qge  
Qgc  
IC = 14A, VGE = 15V, VCE = 1500V  
30  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
40  
380  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 25°C  
IC = 14A, VGE = 15V  
166  
VCE = 960V, RG = 20  
1900  
64  
746  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 125°C  
IC = 14A, VGE = 15V  
180  
VCE = 960V, RG = 20  
1730  
RthJC  
RthCS  
0.62 °C/W  
°C/W  
TO-247HV  
0.21  
Reverse Diode  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 14A, VGE = 0V  
2.7  
V
trr  
IRM  
QRM  
1.4  
23  
16  
μs  
A
μC  
IF = 7A, VGE = 0V, -diF/dt = 100A/μs  
VR = 100V, VGE = 0V  
Note  
1: Pulse test, t 300μs, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXBA14N300HV IXBT14N300HV  
IXBH14N300HV  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
28  
24  
20  
16  
12  
8
250  
200  
150  
100  
50  
V
= 25V  
V
= 25V  
GE  
GE  
23V  
21V  
17V  
15V  
13V  
11V  
19V  
9V  
7V  
17V  
15V  
13V  
11V  
9V  
7V  
4
5V  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
28  
24  
20  
16  
12  
8
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 25V  
GE  
V
= 15V  
GE  
19V  
15V  
13V  
11V  
9V  
I
= 28A  
C
7V  
I
= 14A  
C
I
= 7A  
C
4
5V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
45  
40  
35  
30  
25  
20  
15  
10  
5
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
T
J
= 25ºC  
I C = 28A  
14A  
T
J
= 125ºC  
25ºC  
- 40ºC  
7.0  
7A  
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.5  
8.0  
8.5  
9.0  
5
7
9
11  
13  
15  
17  
19  
21  
23  
25  
VGE - Volts  
VGE - Volts  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXBA14N300HV IXBT14N300HV  
IXBH14N300HV  
Fig. 7. Transconductance  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
20  
18  
16  
14  
12  
10  
8
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T
J
= 25ºC  
125ºC  
T
J
= - 40ºC  
25ºC  
125ºC  
V
= 0V  
GE  
6
V
= 15V  
GE  
4
2
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
VF - Volts  
IC - Amperes  
Fig. 10. Capacitance  
Fig. 9. Gate Charge  
10,000  
1,000  
100  
16  
14  
12  
10  
8
f = 1 MHz  
V
= 1500V  
CE  
I
I
= 14A  
C
G
= 10mA  
C
ies  
6
C
oes  
res  
4
2
C
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
10  
20  
30  
40  
50  
60  
VCE - Volts  
QG - NanoCoulombs  
Fig. 11. Reverse-Bias Safe Operating Area  
Fig. 12. Maximum Transient Thermal Impedance  
140  
120  
100  
80  
1
0.1  
0.01  
60  
40  
T
J
= 125ºC  
R
= 20Ω  
G
20  
dv / dt < 10V / ns  
0
0.001  
500  
1000  
1500  
2000  
2500  
3000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VCE - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXBA14N300HV IXBT14N300HV  
IXBH14N300HV  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
1000  
100  
10  
1000  
100  
10  
V
Limit  
V
Limit  
CE(sat)  
CE(sat)  
25µs  
25µs  
100µs  
1
1
100µs  
1ms  
1ms  
0.1  
0.01  
0.1  
0.01  
T = 150ºC  
T = 150ºC  
J
J
10ms  
T
C
= 25ºC  
T = 75ºC  
C
10ms  
Single Pulse  
Single Pulse  
DC  
100ms  
100ms  
DC  
1,000  
1
10  
100  
1,000  
10,000  
1
10  
100  
10,000  
VCE - Volts  
VCE - Volts  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXYS REF: B_14N300(4P) 5-16-14-A  
IXBA14N300HV IXBT14N300HV  
IXBH14N300HV  
TO-263HV Outline  
E
E
A
L1  
C2  
D1  
E1  
D2  
H
3
A1  
1
2
L4  
L3  
GAUGE  
PLANE  
b2  
b
e1  
e2  
0.43 [11.0]  
c
0° - 8°  
0.66 [16.7]  
0.34 [8.7]  
A2  
0.20 [5.0]  
0.10 [2.5]  
0.12 [3.0]  
0.06 [1.6]  
PINS:  
1 - Gate 2 - Emitter  
3 - Collector  
TO-268HV (IXBT)  
E
A
E1  
L2  
C2  
3
D1  
D
D2  
H
D3  
1
2
2
1
A1  
c
L4  
b
e
e
e2  
0.67 [17.0]  
L3  
0° - 8°  
A2  
0.51 [13.0]  
L
SCALE: 4X  
0.83 [21.0]  
0.2 [3.0]  
0.20 [5.0]  
PINS:  
1 - Gate 2 - Emitter  
3 - Collector  
0.22 [ 5.5]  
0.10 [ 2.5]  
TO-247HV (IXBH)  
PINS:  
1 - Gate 2 - Emitter  
3,4 - Collector  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
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