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IXFN55N50

型号：

IXFN55N50

描述：

HiPerFET功率MOSFET[ HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

123 K

下载PDF手册
HiPerFETTM  
VDSS  
ID25  
RDS(on)  
trr  
IXFN 55N50 500V 55A  
IXFN 50N50 500V 50A 100mΩ 250ns  
IXFK 55N50 500V 55A 80mΩ 250ns  
80mΩ 250ns  
Power MOSFET  
Single Die MOSFET  
IXFK 50N50 500V 50A 100mΩ 250ns  
Preliminary data sheet  
TO-264AA(IXFK)  
Symbol  
TestConditions  
Maximum Ratings  
IXFK  
IXFK  
IXFN  
IXFN  
55N50  
50N50  
55N50  
50N50  
VDSS  
VDGR  
T
= 25°C to 150°C  
500  
500  
500  
500  
V
V
TJJ = 25°C to 150°C  
G
D (TAB)  
D
S
VGS  
Continuous  
Transient  
±20  
±30  
±20  
±30  
V
V
VGSM  
miniBLOC,SOT-227B(IXFN)  
ID25  
IDM  
IAR  
T
= 25°C  
55  
220  
55  
50  
200  
50  
55  
220  
55  
50 A  
200 A  
50 A  
TC =25°C,  
E153432  
S
TCC = 25°C  
G
EAR  
TC = 25°C  
60  
5
60  
5
mJ  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
V/ns  
S
D
PD  
TC = 25°C  
560  
600  
W
G = Gate  
D
= Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
S = Source  
TAB = Drain  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
TL  
1.6 mm (0.063 in) from case for 10 s  
300 N/A  
2500  
°C  
Features  
VISOL  
50/60 Hz, RMS  
ISOL ≤ 1 mA  
t = 1 min  
t = 1 s  
N/A  
N/A  
V~  
V~  
• International standard packages  
• Encapsulating epoxy meets  
UL 94 V-0, flammability classification  
• miniBLOC with Aluminium nitride  
isolation  
I
3000  
Md  
Mounting torque  
0.9/6  
N/A  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Terminal connection torque  
• Low R  
HDMOSTM process  
Weight  
10  
30  
g
• RuggeDdS (pono) lysilicon gate cell structure  
• Unclamped Inductive Switching (UIS)  
rated  
• Low package inductance  
• Fast intrinsic Rectifier  
Symbol  
TestConditions  
CharacteristicValues  
Min. Typ. Max.  
(TJ = 25°C, unless otherwise specified)  
Applications  
• DC-DC converters  
• Battery chargers  
VDSS  
VGS = 0 V, ID = 1mA  
VDS = VGS, ID = 8mA  
VGS = ±20V; VDS = 0V  
500  
2.5  
V
VGS(th)  
IGSS  
4.5  
V
• Switched-mode and resonant-mode  
power supplies  
±200  
nA  
• DC choppers  
• Temperature and lighting controls  
IDSS  
V
= V  
T = 25°C  
TJJ = 125°C  
25  
2
µA  
VGDSS = 0DVSS  
mA  
Advantages  
RDS(on)  
V
= 10 V, ID = 0.5 • ID25  
55N50  
50N50  
80  
mΩ  
mΩ  
NGoSte 1  
100  
• Easy to mount  
• Space savings  
• High power density  
97502F (04/02)  
© 2002 IXYS All rights reserved  
IXFK50N50  
IXFN50N50  
IXFK55N50  
IXFN55N50  
Symbol  
TestConditions  
Characteristic Values  
TO-264 AA Outline  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
gfs  
VDS = 10 V; ID = 0.5 • ID25 Note 1  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
45  
S
Ciss  
Coss  
Crss  
9400  
1280  
460  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
45  
60  
120  
45  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1 Ω (External),  
Dim.  
Millimeter  
Inches  
Max.  
.202  
Min.  
Max.  
Min.  
.190  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.100  
.079  
.114  
.083  
Qg(on)  
Qgs  
Qgd  
330  
55  
155  
nC  
nC  
nC  
b
b1  
b2  
c
D
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
0.53  
25.91  
19.81  
0.83  
26.16  
19.96  
.021  
1.020  
.780  
.033  
1.030  
.786  
E
e
J
RthJC  
RthCK  
TO-264AA  
TO-264AA  
0.22  
0.15  
K/W  
K/W  
5.46BSC  
.215BSC  
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
L1  
P
Q
20.32  
2.29  
3.17  
6.07  
8.38  
20.83  
2.59  
3.66  
6.27  
8.69  
.800  
.090  
.125  
.239  
.330  
.820  
.102  
.144  
.247  
.342  
RthJC  
RthCK  
miniBLOC, SOT-227 B  
miniBLOC, SOT-227 B  
0.21  
0.05  
K/W  
K/W  
Q1  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
Source-DrainDiode  
(TJ = 25°C, unless otherwise specified)  
Characteristic Values  
Min. Typ. Max.  
miniBLOC, SOT-227 B  
Symbol  
IS  
TestConditions  
VGS = 0  
55N50  
50N50  
55  
50  
A
A
ISM  
Repetitive;  
55N50  
50N50  
220  
200  
A
A
pulse width limited by TJM  
VSD  
IF = 100 A, VGS = 0 V  
Note 1  
1.5  
V
trr  
250  
ns  
µC  
A
M4 screws (4x) supplied  
QRM  
IRM  
IF = 25 A, -di/dt = 100 A/µs, VR = 100 V  
1.0  
10  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
B
31.50  
7.80  
31.88  
8.20  
1.240  
0.307  
1.255  
0.323  
C
D
4.09  
4.09  
4.29  
4.29  
0.161  
0.161  
0.169  
0.169  
E
F
4.09  
14.91  
4.29  
15.11  
0.161  
0.587  
0.169  
0.595  
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
G
H
30.12  
38.00  
30.30  
38.23  
1.186  
1.496  
1.193  
1.505  
J
K
11.68  
8.92  
12.22  
9.60  
0.460  
0.351  
0.481  
0.378  
L
M
0.76  
12.60  
0.84  
12.85  
0.030  
0.496  
0.033  
0.506  
N
O
25.15  
1.98  
25.42  
2.13  
0.990  
0.078  
1.001  
0.084  
P
Q
4.95  
26.54  
5.97  
26.90  
0.195  
1.045  
0.235  
1.059  
R
S
3.94  
4.72  
4.42  
4.85  
0.155  
0.186  
0.174  
0.191  
T
U
24.59  
-0.05  
25.07  
0.1  
0.968  
-0.002  
0.987  
0.004  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
IXFK50N50  
IXFN50N50  
IXFK55N50  
IXFN55N50  
Figure 2. Output Characteristics at 125OC  
Figure 1. Output Characteristics at 25OC  
100  
80  
60  
40  
20  
0
140  
120  
100  
80  
VGS = 10V  
TJ = 125OC  
6V  
VGS = 10V  
TJ = 25OC  
9V  
8V  
7V  
9V  
8V  
7V  
6V  
5V  
5V  
60  
40  
20  
0
0
4
8
12  
VDS - Volts  
16  
20  
24  
0
4
8
12  
16  
20  
24  
VDS - Volts  
Figure3.  
RDS(on) normalized to 0.5  
Figure 4. RDS(on) normalized to 0.5  
ID25 value vs. TJ  
ID25 value vs. ID  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
2.2  
VGS = 10V  
V
GS = 10V  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
TJ = 125OC  
ID = 55A  
TJ = 25OC  
ID = 27.5A  
0
20  
40  
60  
80  
100  
120  
25  
50  
75  
100  
125  
150  
ID - Amperes  
TJ - Degrees C  
Figure5.DrainCurrentvs.CaseTemperature  
Figure6. AdmittanceCurves  
60  
50  
40  
30  
20  
10  
0
100  
IXF_55N50  
IXF_50N50  
80  
60  
40  
20  
0
TJ = 125oC  
TJ = 25oC  
-50 -25  
0
25 50 75 100 125 150  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
TC - Degrees C  
V
GS
- Volts  
© 2002 IXYS All rights reserved  
IXFK50N50  
IXFN50N50  
IXFK55N50  
IXFN55N50  
Figure7. GateCharge  
Figure8.CapacitanceCurves  
12  
10  
8
10000  
1000  
100  
Ciss  
f = 1MHz  
VDS = 250V  
ID = 27.5A  
Coss  
6
4
Crss  
2
0
0
50 100 150 200 250 300 350  
0
5
10 15 20 25 30 35 40  
Gate Charge - nC  
VDS - Volts  
Figure9. ForwardVoltageDropofthe  
Intrinsic Diode  
100  
80  
60  
40  
20  
0
TJ = 125OC  
TJ = 25OC  
0.2  
0.4  
0.6  
0.8  
1.0  
VSD - Volts  
Figure10.TransientThermalResistance  
1.00  
0.10  
0.01  
0.00  
10-4  
10-3  
10-2  
10-1  
100  
101  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
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