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UZDT6753

型号：

UZDT6753

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

3 页

PDF大小：

32 K

下载PDF手册
SM-8 COMPLEMENTARY MEDIUM POWER  
ZDT6753  
TRANSISTORS  
ISSUE 1 – JANUARY 1996  
C1  
C1  
C2  
C2  
B1  
E1  
B2  
E2  
NPN  
PNP  
SM-8  
(8 LEAD SOT223)  
PARTMARKING DETAIL – T6753  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
NPN  
120  
100  
5
PNP  
-120  
-100  
-5  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Peak Pulse Current  
6
-6  
A
Continuous Collector Current  
IC  
2
-2  
A
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
°C  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
Ptot  
VALUE  
UNIT  
Total Power Dissipation at Tamb = 25°C*  
Any single die “on”  
Both die “on” equally  
2.25  
2.75  
W
W
Derate above 25°C*  
Any single die “on”  
Both die “on” equally  
18  
22  
mW/ °C  
mW/ °C  
Thermal Resistance - Junction to Ambient*  
Any single die “on”  
Both die “on” equally  
55.6  
45.5  
°C/ W  
°C/ W  
* The power which can be dissipated assuming the device is mounted in a typical manner  
on a PCB with copper equal to 2 inches square.  
3 - 375  
ZDT6753  
NPN TRANSISTOR  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
120  
100  
5
V
V
V
IC=100µA, IE =0  
IC=10mA, IB =0*  
IE=100µA, IC =0  
Collector-Emitter  
Breakdown Voltage  
Emitter-Base  
Breakdown Voltage  
Collector Cutoff  
Current  
0.1  
10  
VCB=100V  
µA  
µA  
VCB=100V,T  
=100°C  
Emitter Cutoff Current IEBO  
0.1  
VEB=4V, IC =0  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.13  
0.23  
0.3  
0.5  
V
IC=1A, IB=100mA*  
IC=2A, IB=200mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
0.9  
0.8  
1.25  
1
V
V
IC=1A, IB=100mA*  
IC=1A, VCE=2V*  
Base-Emitter  
Turn-On Voltage  
Static Forward  
Current Transfer Ratio  
70  
100  
55  
200  
200  
110  
55  
IC=50mA, VCE=2V  
IC=500mA, VCE=2V*  
IC=1A, VCE=2V*  
300  
25  
IC=2A, VCE=2V*  
Transition Frequency  
fT  
140  
175  
MHz  
IC=100mA, VCE=5V  
f=100MHz  
Output Capacitance  
Switching Times  
Cobo  
ton  
30  
pF  
ns  
ns  
VCB=10V, f=1MHz  
80  
IC=500mA, VCE=10V  
B1=IB2=50mA  
I
toff  
1200  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%  
For typical characteristics graphs see FZT653 datasheet.  
3 - 376  
ZDT6753  
PNP TRANSISTOR  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
V(BR)CBO -120  
TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V
V
V
IC=-100µA  
IC=-10mA*  
IE=-100µA  
Collector-Emitter  
Breakdown Voltage  
VCEO(SUS) -100  
Emitter-Base  
Breakdown Voltage  
V(BR)EBO  
-5  
Collector Cutoff  
Current  
ICBO  
-0.1  
-10  
V
CB=-100V  
µA  
µA  
VCB=-100V, T  
=100°C  
amb  
Emitter Cutoff Current IEBO  
-0.1  
VEB=-4V  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-0.17  
-0.30  
-0.3  
-0.5  
V
V
IC=-1A, IB=-100mA*  
IC=-2A, IB=-200mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
-0.90  
-0.8  
-1.25  
-1.0  
V
V
IC=-1A, IB=-100mA*  
IC=-1A, VCE=-2V*  
Base-Emitter Turn-On VBE(on)  
Voltage  
Static Forward  
Current Transfer Ratio  
hFE  
70  
100  
55  
200  
200  
170  
55  
IC=-50mA, VCE=-2V  
IC=-500mA, VCE=-2V*  
IC=-1A, VCE=2V*  
300  
25  
IC=-2A, VCE=-2V*  
Transition Frequency  
fT  
100  
140  
MHz  
IC=-100mA, VCE=5V  
f=100MHz  
Output Capacitance  
Switching Times  
Cobo  
ton  
30  
pF  
ns  
ns  
VCE=-10V, f=1MHz  
40  
IC=-500mA, VCC=-10V  
IB1=IB2=50mA  
toff  
600  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%  
For typical characteristics graphs see FZT753 datasheet.  
3 - 377  
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