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RXR035N03TCL

型号：

RXR035N03TCL

品牌：

ROHM[ ROHM ]

页数：

7 页

PDF大小：

569 K

下载PDF手册
Data Sheet  
4V Drive Nch MOSFET  
RXR035N03  
Structure  
Dimensions (Unit : mm)  
Silicon N-channel MOSFET  
TSMT3  
Features  
(3)  
1) Low on-resistance.  
2) Built-in G-S Protection Diode.  
3) Small Surface Mount Package (TSMT3).  
(1)  
(2)  
Abbreviated symbol : XQ  
Application  
Switching  
Packaging specifications  
Inner circuit  
Package  
Taping  
TCL  
3000  
○
(3)  
Type  
Code  
Basic ordering unit (pieces)  
∗1  
RXR035N03  
∗2  
Absolute maximum ratings (Ta = 25C)  
Parameter  
(1)  
(2)  
(1) Gate  
(2) Source  
(3) Drain  
Symbol  
VDSS  
VGSS  
ID  
Limits  
30  
Unit  
V
∗1 BODY DIODE  
∗2 ESD PROTECTION DIODE  
Drain-source voltage  
Gate-source voltage  
20  
V
Continuous  
3.5  
A
Drain current  
Pulsed  
*1  
IDP  
12  
A
Continuous  
Pulsed  
IS  
0.8  
A
Source current  
(Body Diode)  
*1  
*2  
ISP  
12  
A
Power dissipation  
PD  
1.0  
W
C  
C  
Channel temperature  
Tch  
Tstg  
150  
Range of storage temperature  
*1 Pw10s, Duty cycle1%  
55 to 150  
*2 Mounted on a ceramic board.  
Thermal resistance  
Parameter  
Symbol  
Rth (ch-a)*  
Limits  
125  
Unit  
Channel to Ambient  
*Mounted on a ceramic board.  
C / W  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.03 - Rev.A  
1/6  
Data Sheet  
RXR035N03  
ꢀ
Electrical characteristics (Ta = 25C)  
Parameter  
Symbol  
IGSS  
Min.  
Typ.  
-
Max.  
Unit  
A VGS=20V, VDS=0V  
ID=1mA, VGS=0V  
A VDS=30V, VGS=0V  
Conditions  
Gate-source leakage  
-
10  
Drain-source breakdown voltage V(BR)DSS  
30  
-
-
1
2.5  
50  
65  
70  
-
V
Zero gate voltage drain current  
Gate threshold voltage  
IDSS  
-
-
VGS (th)  
1.0  
-
V
VDS=10V, ID=1mA  
ID=3.5A, VGS=10V  
ID=3.5A, VGS=4.5V  
ID=3.5A, VGS=4.0V  
ID=3.5A, VDS=10V  
-
35  
45  
50  
-
Static drain-source on-state  
resistance  
*
RDS (on)  
m  
S
-
-
*
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
l Yfs l  
2.2  
Ciss  
Coss  
Crss  
td(on)  
tr  
-
-
-
-
-
-
-
-
-
-
180  
70  
35  
10  
25  
25  
7
-
pF VDS=10V  
pF VGS=0V  
-
-
pF f=1MHz  
-
ns ID=1.7A, VDD 15V  
ns VGS=10V  
ns RL=8.8  
ns RG=10  
nC ID=3.5A  
*
*
*
*
*
*
*
-
Turn-off delay time  
Fall time  
td(off)  
tf  
-
-
Total gate charge  
Gate-source charge  
Gate-drain charge  
Qg  
3.3  
1.0  
1.0  
-
Qgs  
Qgd  
-
nC VDD 15V  
nC VGS=5V  
-
*Pulsed  
Body diode characteristics (Source-Drain) (Ta = 25C)  
Parameter  
Forward Voltage  
Symbol  
Min.  
-
Typ.  
-
Max. Unit  
1.2  
Conditions  
*
VSD  
V
Is=3.5A, VGS=0V  
*Pulsed  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2/6  
2011.03 - Rev.A  
Data Sheet  
RXR035N03  
ꢀ
Electrical characteristic curves (Ta=25C)  
Fig.1 Typical Output Characteristics(Ⅰ)  
Fig.2 Typical Output Characteristics(Ⅱ)  
3
3.5  
3
Ta=25℃  
Pulsed  
VGS= 10V  
Ta=25℃  
Pulsed  
2.5  
VGS= 2.5V  
VGS= 10V  
VGS= 4.5V  
VGS= 4.0V  
2.5  
2
2
VGS= 4.5V  
VGS= 4.0V  
1.5  
1.5  
1
VGS= 2.5V  
1
0.5  
0
0.5  
0
VGS= 2.0V  
VGS= 2.0V  
0.8  
0
0.2  
0.4  
0.6  
1
0
2
4
6
8
10  
DRAIN-SOURCE VOLTAGE : VDS[V]  
DRAIN-SOURCE VOLTAGE : VDS[V]  
Fig.4 Static Drain-Source On-State  
Fig.3 Typical Transfer Characteristics  
Resistance vs. Drain Current(Ⅰ)  
10  
1
1000  
VDS= 10V  
Pulsed  
Ta=25℃  
Pulsed  
Ta= 125℃  
Ta= 75°C  
Ta= 25°C  
VGS= 4.0V  
VGS= 4.5V  
VGS= 10V  
Ta= - 25°C  
0.1  
100  
.
0.01  
0.001  
10  
0
1
2
3
0.01  
0.1  
1
10  
DRAIN-CURRENT : ID[A]  
GATE-SOURCE VOLTAGE : VGS[V]  
Fig.5 Static Drain-Source On-State  
Fig.6 Static Drain-Source On-State  
Resistance vs. Drain Current(Ⅱ)  
Resistance vs. Drain Current(Ⅲ)  
1000  
100  
10  
1000  
VGS= 4.5V  
Pulsed  
VGS= 10V  
Pulsed  
Ta= 125℃  
Ta= 75°C  
Ta= 25°C  
Ta= - 25°C  
Ta= 125℃  
Ta= 75°C  
Ta= 25°C  
Ta= - 25°C  
100  
10  
0.1  
1
10  
0.1  
1
10  
DRAIN-CURRENT : ID[A]  
DRAIN-CURRENT : ID[A]  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
3/6  
2011.03 - Rev.A  
Data Sheet  
RXR035N03  
ꢀ
Fig.7 Static Drain-Source On-State  
Fig.8 Forward Transfer Admittance  
vs. Drain Current  
Resistance vs. Drain Current(Ⅳ)  
1000  
10  
VGS= 4.0V  
Pulsed  
VDS= 10V  
Pulsed  
Ta= 125℃  
Ta= 75°C  
Ta= 25°C  
Ta= - 25°C  
100  
1
Ta= 125℃  
Ta= 75°C  
Ta= 25°C  
Ta= - 25°C  
10  
0.1  
0.1  
1
10  
1.5  
10  
0.01  
0.1  
1
10  
10  
10  
DRAIN-CURRENT : ID[A]  
DRAIN-CURRENT : ID[A]  
Fig.9 Reverse Drain Current  
vs. Sourse-Drain Voltage  
Fig.10 Static Drain-Source On-State  
Resistance vs. Gate Source Voltage  
100  
10  
Ta=25℃  
Pulsed  
VGS=0V  
Pulsed  
ID= 1.75A  
ID= 3.5A  
80  
60  
40  
20  
0
1
Ta= 125℃  
Ta= 75°C  
Ta= 25°C  
Ta= - 25°C  
0.1  
0.01  
0
0.5  
1
0
2
4
6
8
GATE-SOURCE VOLTAGE : VGS[V]  
SOURCE-DRAIN VOLTAGE : VSD [V]  
Fig.11 Switching Characteristics  
Fig.12 Dynamic Input Characteristics  
10  
10000  
1000  
100  
10  
Ta=25°C  
VDD=15V  
VGS=10V  
RG=10Ω  
Pulsed  
8
6
4
2
0
tf  
td(off)  
Ta=25°C  
VDD= 15V  
ID= 3.5A  
RG=10Ω  
Pulsed  
tr  
td(on)  
1
0.01  
0.1  
1
0
2
4
6
8
DRAIN-CURRENT : ID[A]  
TOTAL GATE CHARGE : Qg [nC]  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
4/6  
2011.03 - Rev.A  
Data Sheet  
RXR035N03  
ꢀ
Fig.13 Typical Capacitance  
vs. Drain-Source Voltage  
Fig.14 Maximum Safe Operating Area  
1000  
100  
10  
Operation in this area is limited by RDS(on)  
(VGS = 10V)  
Ciss  
PW = 100μs  
100  
1
PW = 1ms  
Crss  
PW = 10ms  
Coss  
0.1  
0.01  
Ta=25°C  
Single Pulse  
Mounted on a ceramic board.  
(30mm × 30mm × 0.8mm)  
Ta=25°C  
f=1MHz  
VGS=0V  
DC Operation  
100  
10  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
DRAIN-SOURCE VOLTAGE : VDS[V]  
Drain-Source Voltage : VDS [ V ]  
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width  
10  
Ta=25°C  
Single Pulse  
1
0.1  
0.01  
Mounted on a ceramic board.  
(30mm × 30mm × 0.8mm)  
Rth(ch-a)=125°C/W  
Rth(ch-a)(t)=r(t)×Rth(ch-a)  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse width : Pw (s)  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
5/6  
2011.03 - Rev.A  
Data Sheet  
RXR035N03  
ꢀ
Measurement circuits  
Pulse width  
90%  
VGS  
ID  
VDS  
50%  
10%  
50%  
V
GS  
DS  
R
L
V
10%  
10%  
90%  
D.U.T.  
V
DD  
RG  
90%  
t
d(on)  
td(off)  
t
r
tf  
t
on  
toff  
Fig.1-2ꢀSwitching Waveforms  
Fig.1-1 Switching Time Measurement Circuit  
V
G
V
GS  
I
D
VDS  
Q
g
RL  
V
GS  
D.U.T.  
I
G(Const.)  
Q
gs  
Qgd  
VDD  
Charge  
Fig.2-2 Gate Charge Waveform  
Fig.2-1 Gate Charge Measurement Circuit  
Notice  
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design  
ESD protection circuit.  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
6/6  
2011.03 - Rev.A  
Notice  
N o t e s  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
R1120A  
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 		RXR035N03 4V驱动N沟道MOSFET[ 4V Drive Nch MOSFET ] 7 页

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