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IXBF55N300

型号：

IXBF55N300

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

210 K

下载PDF手册
High Voltage, High Gain  
BIMOSFETTM  
VCES = 3000V  
IC110 = 34A  
VCE(sat) ≤ 3.2V  
IXBF55N300  
Monolithic Bipolar  
MOS Transistor  
(Electrically Isolated Tab)  
ISOPLUS i4-PakTM  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TC = 25°C to 150°C  
3000  
3000  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 25  
± 35  
V
V
1
2
Isolated Tab  
5
IC25  
IC110  
ICM  
TC = 25°C  
86  
34  
A
A
A
1 = Gate  
2 = Emitter  
5 = Collector  
TC = 110°C  
TC = 25°C, 1ms  
600  
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 2Ω  
Clamped Inductive Load  
ICM = 110  
VCE ≤ 0.8 • VCES  
A
TSC  
(SCSOA)  
VGE = 15V, TJ = 125°C,  
RG = 10Ω, VCE = 1250V, Non-Repetitive  
Features  
10  
μs  
z
PC  
TC = 25°C  
357  
W
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z
z
TJM  
Tstg  
4000V~ Electrical Isolation  
z
-55 ... +150  
High Blocking Voltage  
z
z
High Peak Current Capability  
Low Saturation Voltage  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
FC  
Mounting Force  
20..120 / 4.5..27  
Nm/lb.in.  
Advantages  
VISOL  
Weight  
50/60Hz, 1 Minute  
4000  
5
V~  
g
z
Low Gate Drive Requirement  
z
High Power Density  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Applications  
Min.  
3000  
3.0  
Typ.  
Max.  
z
BVCES  
VGE(th)  
ICES  
IC = 1mA, VGE = 0V  
IC = 4mA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
Switch-Mode and Resonant-Mode  
Power Supplies  
Uninterruptible Power Supplies (UPS)  
Laser Generators  
Capacitor Discharge Circuits  
5.0  
50 μA  
mA  
±200 nA  
V
z
z
Note 2, TJ = 125°C  
3
z
z
IGES  
VCE = 0V, VGE = ± 25V  
AC Switches  
VCE(sat)  
IC = 55A, VGE = 15V, Note 1  
2.7  
3.3  
3.2  
V
V
TJ = 125°C  
© 2011 IXYS CORPORATION, All Rights Reserved  
DS100205B(11/11)  
IXBF55N300  
ISOPLUS i4-PakTM (HV) Outline  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Min.  
Typ.  
Max.  
gfS  
IC = 55A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
32  
50  
S
Cies  
Coes  
Cres  
7300  
275  
83  
pF  
pF  
pF  
Qg  
335  
47  
nC  
nC  
nC  
Qge  
Qgc  
IC = 55A, VGE = 15V, VCE = 1000V  
130  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
54  
307  
230  
268  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 25°C  
Pin 1 = Gate  
IC = 110A, VGE = 15V  
Pin2 = Emitter  
Pin 3 = Collector  
Tab 4 = Isolated  
VCE = 1250V, RG = 2Ω  
52  
585  
215  
260  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 125°C  
IC = 110A, VGE = 15V  
VCE = 1250V, RG = 2Ω  
RthJC  
RthCS  
0.35 °C/W  
°C/W  
0.15  
Reverse Diode  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max  
VF  
trr  
IF = 55A, VGE = 0V, Note 1  
IF = 28A, VGE = 0V, -diF/dt = 100A/μs  
VR = 100V, VGE = 0V  
2.5  
V
μs  
A
1.9  
54  
IRM  
Notes:  
1. Pulse test, t < 300μs, duty cycle, d < 2%.  
2. Device must be heatsunk for high-temperature leakage current  
measurements to avoid thermal runaway.  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXBF55N300  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
300  
250  
200  
150  
100  
50  
120  
100  
80  
60  
40  
20  
0
VGE = 25V  
VGE = 25V  
20V  
15V  
20V  
15V  
10V  
10V  
5V  
5V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
1
2
3
4
5
6
7
8
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
120  
100  
80  
60  
40  
20  
0
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGE = 25V  
20V  
VGE = 15V  
15V  
I C = 110A  
10V  
I C = 55A  
I C = 27.5A  
5V  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
180  
160  
140  
120  
100  
80  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
TJ = 25ºC  
I C = 110A  
TJ = 125ºC  
25ºC  
- 40ºC  
60  
55A  
40  
20  
27.5A  
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
5
6
7
8
9
10  
11  
12  
13  
14  
15  
VGE - Volts  
VGE - Volts  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXBF55N300  
Fig. 7. Transconductance  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
180  
160  
140  
120  
100  
80  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
TJ = 25ºC  
125ºC  
TJ = 125ºC  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0  
VF - Volts  
IC - Amperes  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
16  
14  
12  
10  
8
100,000  
10,000  
1,000  
100  
VCE = 1000V  
f = 1 MHz  
I
I
C = 55A  
G = 10mA  
C
ies  
C
oes  
6
4
C
res  
2
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
50  
100  
150  
200  
250  
300  
350  
VCE - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Reverse-Bias Safe Operating Area  
1
120  
100  
80  
60  
40  
20  
0
0.1  
0.01  
TJ = 125ºC  
RG = 2Ω  
dv / dt < 10V / ns  
0.001  
200  
600  
1000  
1400  
1800  
2200  
2600  
3000  
0.0001  
0.001  
0.01  
0.1  
1
10  
VCE - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXBF55N300  
Fig. 14. Resistive Turn-on Rise Time vs.  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Collector Current  
700  
600  
500  
400  
300  
200  
700  
600  
500  
400  
300  
200  
RG = 2Ω , VGE = 15V  
CE = 1250V  
V
TJ = 125ºC  
RG = 2Ω , VGE = 15V  
I C = 220A  
VCE = 1250V  
I C = 110A  
TJ = 25ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
TJ - Degrees Centigrade  
IC - Amperes  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
320  
310  
300  
290  
280  
270  
260  
250  
240  
230  
300  
720  
120  
110  
100  
90  
t f  
t
d(off) - - - -  
280  
260  
240  
220  
200  
180  
160  
140  
120  
tr  
t
d(on) - - - -  
700  
680  
660  
640  
620  
600  
580  
560  
RG = 2Ω, VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 1250V  
VCE = 1250V  
I C = 110A  
I C = 220A  
80  
70  
I C = 220A  
I C = 110A  
60  
50  
40  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times vs.  
Collector Current  
380  
360  
340  
320  
300  
280  
260  
240  
220  
200  
320  
300  
280  
260  
240  
220  
200  
180  
160  
140  
360  
340  
320  
300  
280  
260  
240  
220  
680  
600  
520  
440  
360  
280  
200  
120  
tf  
td(off  
) - - - -  
tf  
t
d(off) - - - -  
TJ = 125ºC, VGE = 15V  
RG = 2Ω, VGE = 15V  
VCE = 1250V  
VCE = 1250V  
I C = 110A  
I C = 220A  
TJ = 125ºC, 25ºC  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
2
3
4
5
6
7
8
9
10 11 12  
13 14 15  
RG - Ohms  
IC - Amperes  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXBF55N300  
Fig. 20. Forward-Bias Safe Operating Area  
Fig. 19. Forward-Bias Safe Operating Area  
@ T = 75ºC  
@ T = 25ºC  
C
C
1000  
100  
10  
1000  
100  
10  
V
Limit  
V
Limit  
(sat)  
CE  
CE(sat)  
25µs  
25µs  
100µs  
100µs  
1ms  
1
1
1ms  
10ms  
10ms  
T
T
= 150ºC  
T
T
= 150ºC  
= 25ºC  
J
0.1  
0.01  
0.1  
0.01  
J
= 75ºC  
C
100ms  
DC  
C
100ms  
DC  
Single Pulse  
Single Pulse  
1
10  
100  
1,000  
10,000  
1
10  
100  
1,000  
10,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS REF: B_55N300(8T) 11-03-11-C  
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